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Part A (Short Analytical Questions)

The document describes the structure and requirements of a two-part exam. Part A contains 5 short answer questions worth 4 points each, to be answered in 20 sentence paragraphs within 20 minutes. Answers must be typed into an online form. Part B contains 2 longer analytical problems worth 10 points each, which can be typed or handwritten and scanned. Answers should be completed within 20 additional minutes. Students have 10 more minutes to upload their responses. The total exam time is 55 minutes.

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Adnan Hossain
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42 views3 pages

Part A (Short Analytical Questions)

The document describes the structure and requirements of a two-part exam. Part A contains 5 short answer questions worth 4 points each, to be answered in 20 sentence paragraphs within 20 minutes. Answers must be typed into an online form. Part B contains 2 longer analytical problems worth 10 points each, which can be typed or handwritten and scanned. Answers should be completed within 20 additional minutes. Students have 10 more minutes to upload their responses. The total exam time is 55 minutes.

Uploaded by

Adnan Hossain
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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The question has two parts:

1. Part A comprises question 1 to 5. Answers of these questions should be short. Preferably each
answer should be managed in a 20 sentence paragraph. Each of these questions has 4 points.
Should ideally take 20 minutes. Answers of these questions must be typed into answer form in
google class room.

2. Part B comprises two analytical problems (questions 6 and 7). Each one has 10 points. Students
may type answer in the form or students may answer on a plain paper, scan and upload either in
pdf or jpeg format. This section should ideally take 20 minutes.

10 minutes are given for uploading. Total exam duration is 55 minutes.

PART A
(SHORT ANALYTICAL QUESTIONS)

1. Explain the reason for the reduction in gain for CS amplifier both at high and low
frequencies. Specifically mention which parasitic elements are responsible for this.

2. Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate
is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built-in
potential of the MOS system. Silicon bandgap is 1.1 eV.

3. The Energy band diagrams of an nMOS system are shown in the following figure. Find out
the condition of carriers in the silicon near the oxide/silicon interface and justify your
answer.
4. Explain body effect in nMOS devices and mention how MOS dynamic model is affected
by body effect.

5. Explain why pMOS based mirror circuit acts as current source whereas nMOS based
mirror circuit acts as current sink?

PART B
(PROBLEMS)

6. Consider the NMOS transistor “current source” schematic circuit. For V DD = 1.3 volts and
using IREF = 100 μA (microampreres), the design requirement for the circuit calls for the
output current IO to be nominally around 100 μA. Transistors Q1 and Q2 are geometry
matched in layout and both have gate length L = 0.5 μm and gate width W = 5 μm. The
transistor parameters are as follows: the threshold voltage Vt = 0.4 volt and k’n = 500
μA/V2. a) Find the value of R that gives IO =100 μA and b) Find nMOS transistor’s output
resistance while Early voltage is 5V/μA.

7. Various measurements are made on an NMOS amplifier for which the drain resistor R D is
20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V
and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals
show the voltage gain to be −10 V/V. If the process transconductance parameter is
50μA/V2, what is the MOSFET’s W/L?

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