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Wh@Ts APP: University

The document contains a sample examination paper for a Basic Electronics Engineering course. It includes 30 short answer and long answer questions testing knowledge of topics like PN junction characteristics, rectifier circuits, transistor configurations, JFET operation, and applications of devices like diodes and transistors. Students are required to answer questions ranging from defining key terms to deriving equations to explaining circuit operations with diagrams. The exam assesses understanding of fundamental electronic components and their applications.

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YUGI SINGH
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87 views

Wh@Ts APP: University

The document contains a sample examination paper for a Basic Electronics Engineering course. It includes 30 short answer and long answer questions testing knowledge of topics like PN junction characteristics, rectifier circuits, transistor configurations, JFET operation, and applications of devices like diodes and transistors. Students are required to answer questions ranging from defining key terms to deriving equations to explaining circuit operations with diagrams. The exam assesses understanding of fundamental electronic components and their applications.

Uploaded by

YUGI SINGH
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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WH@TS1APP 👨‍🎓UNIVERSITY

B.Tech I Year I Semester Examinations, - 2021


BASIC ELECTRONICS ENGINEERING
Time: --- Max. Marks 🧐

Short question answers

1. What is forward bias and reverse bias in a PN


junction?

2. Define ripple factor. What is the value of ripple factor


for FWR and HWR?

3. Why transistor is called as a current controlled


device?

4. Explain how hie is different from hfe in CE


configuration.

5. How is drain current controlled in a JFET?

6. List some applications of varactor diode.

7. Differentiate between BJT and JFET.

8. Compare CB and CC Configurations.

1
Electronic engineering examination sample paper
9. Give applications of zener diode.

10. Define reverse break down voltage of a diode.

11. Draw the high frequency model of a transistor.

12. In a BJT, the emitter current is 12 mA and the


emitter current is 1.02 times the collector current. Find
the base current.

13. Why FET is called unipolar device?

14. What are the special features of FET?

Long Questions answers

1. Draw and explain the V-I characteristics of a pn


junction.

2. Compare Half wave rectifier, Full wave rectifier and


Bridge rectifier in any four aspects.
3. What are the applications of the semiconductor
diode? Explain each one with suitable
circuit diagram.

4. A silicon diode operates at forward voltage of 0.4V.


Calculate the factor by which the current will be
multiplied when the temperature is increased from
250C to 1500C.

5. Draw the input and output characteristics of n-p-n


transistor in common base configuration and explain
how they are obtained.

6. In a fixed bias circuit using n-p-n transistor, find the


operating point if VCC = 24V, RB = 220k, RC = 4.7k.

7. Draw the circuit and explain the characteristics of CB


configuration.

8. Write short notes on thermal runaway problems.

9. What is a zener diode? Draw the equivalent circuit of


an ideal zener in the break down region.

10. How is zener diode used as a voltage regulator?


11. Draw the circuit and explain the drain and gate
characteristics of a JFET.

12. Give the parameter values and specifications of a


JFET.

13. Explain the operation of a full wave bridge rectifier


with relevant waveforms.

14. Explain the necessity of filter circuit after the


rectifier circuit.

15. Explain the operation of a transistor with relevant


diagrams.

16. Derive the relationship between α and β of a


transistor.

17. Explain compensation techniques with respect to


BJT Biasing.

18. Draw the h-parameter model of a CB amplifier and


derive the expressions for its voltage gain, current
gain, input impedance and output impedance.
19. Draw the V – I characteristics of a silicon diode,
write an expression for diode current and discuss how
cut in voltage changes with temperature.

20. Draw the circuits of a full wave rectifier using


2-diodes and 4-diodes. Discuss the relative merits
and demerits.

21. Define diffusion capacitance in a P-N junction diode


and discuss its dependence on diode biasing.

22. Derive expressions for ripple factor and efficiency


of rectification for a full wave rectifier.

23. Derive expressions for voltage gain,


input-resistance and current gain for an emitter
follower.
24. In the Silicon Transistor circuit shown in figure 5,
find the maximum base resistance RB to drive the

Transistor into saturation.


25. Discuss the need for biasing a transistor. Briefly
explain about self biasing.

26. Explain how h-parameters can be determined from


the static input and output characteristics.

27. Discuss the characteristic differences between a


BJT and a FET. Draw a diagram depicting the
structure of a N-channel FET and identify the various
terminals and the biasing voltages.

28. Explain how the pinch off voltage can be modified


without changing the physical structure of a JFET.

29. Explain the operation of a FET with a neat diagram


and V-I characteristics.

30. An N-channel JFET has a pinch voltage of -4.5V


and IDSS = 9mA at what value of VGS will IDS equal
to 3mA? What is its gm at this IDS.

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