BSS138LT1

Preferred Device

Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
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PCMCIA cards, cellular and cordless telephones.

Features 200 mA, 50 V

• Pb−Free Packages are Available RDS(on) = 3.5

• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications N−Channel
3
• Miniature SOT−23 Surface Mount Package Saves Board Space

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit 2

Drain−to−Source Voltage VDSS 50 Vdc

Gate−to−Source Voltage − Continuous VGS ± 20 Vdc 3
SOT−23
Drain Current mA CASE 318
− Continuous @ TA = 25°C ID 200 1 STYLE 21
− Pulsed Drain Current (tp ≤ 10
s) IDM 800
2
Total Power Dissipation @ TA = 25°C PD 225 mW
Operating and Storage Temperature TJ, Tstg − 55 to °C
Range 150 MARKING DIAGRAM & PIN ASSIGNMENT
3
Thermal Resistance − Junction−to−Ambient RJA 556 °C/W Drain
Maximum Lead Temperature for Soldering TL 260 °C
Purposes, for 10 seconds J1 = Device Code
J1M
Maximum ratings are those values beyond which device damage can occur. M = Date Code
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits 1 2
are exceeded, device functional operation is not implied, damage may occur
Gate Source
and reliability may be affected.

ORDERING INFORMATION

Device Package Shipping†

BSS138LT1 SOT−23 3000 Tape & Reel
BSS138LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
BSS138LT3 SOT−23 10,000 Tape & Reel
BSS138LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

June, 2004 − Rev. 3 BSS138LT1/D
 BSS138LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS 50 − − Vdc
(VGS = 0 Vdc, ID = 250
Adc)
Zero Gate Voltage Drain Current IDSS
Adc
(VDS = 25 Vdc, VGS = 0 Vdc) − − 0.1
(VDS = 50 Vdc, VGS = 0 Vdc) − − 0.5
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1
Adc
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage VGS(th) 0.5 − 1.5 Vdc
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance rDS(on) Ohms
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) − 5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc) − − 3.5
Forward Transconductance gfs 100 − − mmhos
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time td(on) − − 20 ns
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
Turn−Off Delay Time td(off) − − 20
1. Pulse Test: Pulse Width ≤ 300
s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.

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 BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

0.8 0.9
TJ = 25°C VGS = 3.5 V VDS = 10 V 25°C
0.7 0.8
− 55°C
I D , DRAIN CURRENT (AMPS)

VGS = 3.25 V

I D , DRAIN CURRENT (AMPS)

0.6 0.7
150°C
VGS = 3.0 V 0.6
0.5
VGS = 2.75 V 0.5
0.4
0.4
0.3 VGS = 2.5 V
0.3
0.2 0.2
0.1 0.1

0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2.2 1.25
RDS(on) , DRAIN−TO−SOURCE RESISTANCE

ID = 1.0 mA
2
VGS = 10 V
Vgs(th) , VARIANCE (VOLTS)

1.8 ID = 0.8 A 1.125

(NORMALIZED)

1.6
VGS = 4.5 V
1.4 ID = 0.5 A 1

1.2

1 0.875

0.8

0.6 0.75
−
55 −5 45 95 145 −
55 −30 −5 20 45 70 95 120 145
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On−Resistance Variation with Figure 4. Threshold Voltage Variation

Temperature with Temperature

10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VDS = 40 V
TJ = 25°C
8

4
ID = 200 mA
2

0
0 500 1000 1500 2000 2500 3000
QT, TOTAL GATE CHARGE (pC)

Figure 5. Gate Charge

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 BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

10
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)

RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)

8
VGS = 2.5 V VGS = 2.75 V
9
7
150°C
8
150°C 6
7

6 5

5 4
25°C
4 25°C
3
3 −55°C

2 2 −55°C

1 1
0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 6. On−Resistance versus Drain Current Figure 7. On−Resistance versus Drain Current
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)

RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)

6 4.5
VGS = 4.5 V VGS = 10 V
5.5
150°C 4 150°C
5
4.5 3.5
4
3
3.5
3 2.5 25°C
25°C
2.5 2
2 −55°C
1.5 −55°C
1.5
1 1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 8. On−Resistance versus Drain Current Figure 9. On−Resistance versus Drain Current

1 120

100
I D , DIODE CURRENT (AMPS)

TJ = 150°C 25°C −55°C

0.1
80

60
Ciss
0.01 40
Coss
20
Crss
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25
VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 10. Body Diode Forward Voltage Figure 11. Capacitance

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 BSS138LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AH

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
L Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
3 FINISH THICKNESS. MINIMUM LEAD THICKNESS
B S IS THE MINIMUM THICKNESS OF BASE
1 2 MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
V G
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
C B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
D H J G 0.0701 0.0807 1.78 2.04
K H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035

0.8
0.031
SCALE 10:1
inches
mm 

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 BSS138LT1

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