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Fet Biasing - Part 1: Reference Book: Electronic Devices and Circuit Theory (11th Edition) Robert F. Boylestad

1) The document discusses various biasing circuits used for field-effect transistors (FETs) including JFETs, MOSFETs, and MESFETs. 2) Common biasing circuits covered include fixed bias, self-bias, and voltage divider bias configurations. 3) Both mathematical and graphical approaches are described for analyzing the biasing circuits and determining the operating point (quiescent point) of the FET.

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0% found this document useful (0 votes)
169 views

Fet Biasing - Part 1: Reference Book: Electronic Devices and Circuit Theory (11th Edition) Robert F. Boylestad

1) The document discusses various biasing circuits used for field-effect transistors (FETs) including JFETs, MOSFETs, and MESFETs. 2) Common biasing circuits covered include fixed bias, self-bias, and voltage divider bias configurations. 3) Both mathematical and graphical approaches are described for analyzing the biasing circuits and determining the operating point (quiescent point) of the FET.

Uploaded by

Kazi Tanvir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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FET BIASING_PART 1

Chapter 7
Reference book: Electronic Devices and Circuit Theory
(11th Edition) Robert F. Boylestad

1
OBJECTIVES
■ Be able to perform a dc analysis of JFET, MOSFET, and MESFET networks.

■ Become proficient in the use of load-line analysis to examine FET networks.

■ Develop confidence in the dc analysis of networks with both FETs and BJTs.

■ Understand how to use the Universal JFET Bias Curve to analyze the various FET
configurations.

2
GENERAL RELATIONSHIPS
■ For all FETs: IG  0A ID = IS
VGS 2
■ For JFETs and Depletion-Type MOSFETs: ID = IDSS(1− )
VP

■ For Enhancement-Type MOSFETs: I D = k (VGS −VT ) 2

■ BJT: Linear Relationship between IB and IC

■ FET: Non-linear Relationship between VGS and ID.

3
COMMON FET BIASING CIRCUITS
■ JFET
■ Fixed – Bias
■ Self-Bias
■ Voltage-Divider Bias

■ Depletion-Type MOSFET
■ Self-Bias
■ Voltage-Divider Bias

■ Enhancement-Type MOSFET
■ Feedback Configuration
■ Voltage-Divider Bias
4
FIXED-BIAS JFET
■ The simplest biasing arrangements:

IG  0A ID = IS
VGS 2
ID = IDSS(1− )
VP
■ For the DC analysis,
■ Capacitors are open circuits

IG  0A VRG = I G RG = (0 A) RG = 0V

■ The zero-volt drop across RG permits replacing


RG by a short-circuit.

5
FIXED-BIAS JFET
■ Can be solved using either Mathematical Approach or Graphical Approach:
Mathematical Approach Graphical Approach
VGS = −VGG

VDS = VDD − I D RD

VS = 0

VD = VDS

VG = VGS

VGS 2
I D = I DSS (1 − )
VP
6
FIXED-BIAS JFET EXAMPLE
Graphical Approach

VGS ID
0 IDSS
0.3VP IDSS/2
0.5VP IDSS/4
VP 0mA
7
JFET: SELF-BIAS CONFIGURATION
■ The self-bias configuration eliminates the need for two dc supplies.

IG  0A

ID = IS

VGS 2
ID = IDSS(1− )
VP

8
SELF-BIAS CONFIGURATION
■ Can be solved using either Mathematical Approach or Graphical Approach:

VGS = − I D RS

VDS = VDD − I D ( RS + RD )
2
 VGS 
ID 
= I DSS 1 − 
 VP 
2
 I D RS 
ID = I DSS 1 + 
 VP 
9
SELF-BIAS CONFIGURATION
Graphical Approach
■ Draw the device transfer characteristic using shorthand method.
■ Draw the network load line
■ Use VGS = − I D RS to draw straight line.
■ First point, I D = 0, VGS = 0
■ Second point, any point from ID = 0 to ID = IDSS. Choose
I DSS
ID = then
2
I R
VGS = − DSS S
2
■ The Q-point obtained at the intersection of the straight line plot and the device
characteristic curve.
■ The quiescent value for ID and VGS can then be determined and used to find the other
quantities of interest.
10
SELF-BIAS CONFIGURATION

11
SELF-BIAS EXAMPLE
■ Determine VGSQ, IDQ,VDS,VS,VG and VD.

12
SELF-BIAS EXAMPLE Contd.
■ Plot ID vs VGS and draw a line from the origin of the axis.

13
SELF-BIAS EXAMPLE Contd.
■ Plot the transfer curve using IDSS and VP using shorthand method:

VGS ID

0 IDSS

0.3VP IDSS/2

0.5VP IDSS/4

VP 0mA

14
SELF-BIAS EXAMPLE Contd.
■ Superimpose the load line on top of the transfer curve:

15
JFET: VOLTAGE-DIVIDER BIAS
■ The source VDD was separated into two equivalent sources to permit a further separation of the
input and output regions of the network.
■ Since IG = 0A, Kirchoff’s current law requires that IR1= IR2 and the series equivalent circuit appearing to
the left of the figure can be used to find the level of VG.

16
VOLTAGE-DIVIDER BIAS
■ VG can be found using the voltage divider rule:
R2VDD
VG =
R1 + R2
■ Using Kirchoff’s Law on the input loop:
VD = VDD − I D RD VDS = VDD − I D ( RD + RS )

VS = I D RS VGS = VG − I D RS

■ Rearranging and using ID =IS:


VDD
I R1 = I R 2 =
R1 + R2
■ Again the Q point needs to be established by plotting a line that
intersects the transfer curve.
17
VOLTAGE-DIVIDER BIAS
■ Graphical Approach ( to find VGSQ and IDQ):
■ Plot a line for:
■ VGS = VG when ID = 0A
■ VGS = 0V when ID = VG/RS.
■ Plot the transfer curve using IDSS and VP using shorthand method.
■ The Q-point is located at the intersection.

VGS ID VGS = VG − I D RS
0 IDSS
0.3VP IDSS/2
0.5VP IDSS/4
VP 0mA

18
EFFECT OF INCREASING VALUES OF RS

19
JFET: VOLTAGE-DIVIDER BIAS EXAMPLE
■ Determine IDQ, VGSQ, VD, VS, VDS and VDG.

R2VDD
VG = VGS = VG − I D RS
R1 + R2

VDS = VDD − I D ( RD + RS )

20
VOLTAGE-DIVIDER BIAS EXAMPLE Contd.
■ Graphical Approach ( to find VGSQ and IDQ):
■ Plot a line for:
■ VGS = VG when ID = 0A
■ VGS = 0V when ID = VG/RS.
■ Plot the transfer curve using IDSS and VP
using shorthand method.
■ Identify the Q-point.
R2VDD VS = I D RS
VG =
R1 + R2
VDS = VDD − I D ( RD + RS )
VGS = VG − I D RS
VDS = VD − VS
VD = VDD − I D RD
VDG = VD − VG
21
22

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