Department of Electrical Engineering

EE363: Power Electronics

Course Instructor: Dr. Tauseef Tauqeer Date: 1-Apr-2021

Lab Engineer: Abdullah Baig Semester: Spring 2021

Lab 1: VI Characteristics of Diode and BJT

Report Viva Total

Name Roll Number
Marks/10 Marks/5 Marks/15

Abdullah Rao BSEE18041

Checked on: __________________________

Signature: __________________________
 1.1Learning Outcomes
After completing this Lab, the student will be able to
● Plot VI curve of a diode in simulation and from hardware measurements,
● Plot I C against V CE of a bipolar junction transistor in simulation and from hardware
measurements,
● Compare the VI curve of a general purpose diode with that of a power diode.

1.2Equipment
● Digital multimeter
● Breadboard
● Electronic components as in the following table
Component Value Quantity
Power diode BY329 1
General purpose diode 1N4007 1
NPN transistor 2N3904 1
Resistor 1 MΩ 1
Resistor 470 kΩ 1
Resistor 100 kΩ 1
Resistor 10 kΩ 1
Resistor 2.2 kΩ 1
Resistor 1 kΩ 1

1.3Silicon Junction Diode

A diode is a two terminal PN junction device and a PN junction is normally formed by
allowing diffusion and epitaxial growth structure of a power diode and symbol are shown in
Figure 1-1.

Figure 1-1: Structure and symbol of a diode

The relation between the voltage and current for a diode is given by the following equation.

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 VD
( VT
I D =I S e −1 )
Here, V D represents the voltage at the terminals of the diode and I D is the current flowing
through the diode. This relation is presented graphically in Figure 1-2.

Figure 1-2: VI curve of a diode

1.4Bipolar Junction Transistor

A BJT behaves as a current controlled current source in its active region. The base emitter
junction acts as a diode, with exponential relation between base-emitter voltage and base
current. The collector current is directly proportional to the base current, within some
limits. The ratio between the collector current and base current is an important
characteristic for a BJT. It is represented by the symbol β as shown in the following
equation.
I C =β I B

When an ideal BJT is driven by a varying base current, its collector current follows the above
equation, regardless of the collector-emitter voltage. However, practical transistors deviate
in two ways from this behavior. First, their collector current has a small component
proportional to the V CE. This is due to the non-zero resistance of the junctions and the
connecting pins. Secondly, it maintains a non-zero V CE (nearly < 0.2 for small signal
transistors) in saturation. These two minor properties, along with the proportionality
between I C and I B is shown in the following diagram.

In the diagram, the collector current is nearly flat with respect to V CE and each curve for I C
corresponds to a respective I B. As explained earlier, the flat lines have a very small gradient

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and the rising sections at the left side (near V CE < 0.2), both due to non-idealities. shown in
Figure 1-3.

Figure 1-3: Collector current vs collector-emitter voltage for a bipolar junction transistor

1.5Task 1: VI Curve of a Diode

Objective: Build a simple circuit to drive a diode with a known current. Plot the VI curve of a
diode from measured data and in simulation. Analyze the VI curves of a general purpose
diode and a power diode.

Figure 1-4: Diodes in series

1. Assemble the circuit shown in Figure 1-4 on a breadboard. Use the power supply in the
place of V 1. Connect a voltmeter across R1 and adjust V 1 so that V R 1is 4.0 V correct to 1
decimal place. Measure the values of V D 1 and V D 2 and write correct to 3 significant
figures. [4
points]

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 V D 1=¿ 369.501 mV

V D 2=¿ 686.808 mV

2. Using the resistance of R1 and the voltage across it, as set in the previous part, calculate
the current flowing through R1. Note that R1, D1 and D2 are in series, so the same current
flows through them. Write the value of I D , the current flowing through the diodes, correct
to 3 significant figures. [2
points]

I D =¿ 40.401uA

Figure 1-5: Diodes in parallel

3. Build the circuit shown in Figure 1-5. Set the simulation mode to DC Sweep. Set the
source as V1, Start value as 0 V, Stop value as 1 V and Increment as 0.01 V. Set the
currents of both diodes as the Output variable for the analysis. Run the simulation and wait
for the output graph to appear. Adjust the settings such that the graph has a white
background, a grid is displayed and both the traces have a width of 2. Take a screenshot of
the graph and paste here.
[5 points]

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4. Perform the simulation again but this time sweep the voltage from 0 V to 2 V. Run the
simulation and paste the screenshot of the graph here. [3 points]

5. Analysis Consider the graphs plotted in part 3. Describe the VI graphs of the diodes. What
is the initial shape of the graph (before 0.5V)? What is the final shape of the graph (after
0.5 V)? At what voltage does the current starts to rise rapidly for each diode? [3
points]

Before 0.5V, the graphs are almost at zero. The graph stays same till about 0.7 and after
that there is an increase in the current after 0.7V.

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6. Analysis Describe the similarities and differences between the VI curves of a general
purpose diode (1N4007) and a power diode (BY328). Are the shapes of the graphs similar
in general? Which diode needs less voltage to pass a given amount of current? [2 points]

The graphs share a similar trend before 0.8V and stays at almost 0V. After that the is a
steady increase in both curves. The graphs are similar but with different slope. 1N4007
allows more current to pass than BY328 at a same voltage after the 0.8 V barrier.

7. Analysis Consider the extended VI curves of the diodes plotted in part 4. Describe the
shape of the graphs at voltage greater than 1.2 V. [1 point]

The shape of graph after 1.2V is almost linear like resistor.

8. Analysis Beyond the voltages greater than 1.2 V, the diodes seem to behave like resistors.
Which diode has less resistance? [1 point]

The resistance of 1N4007 is lesser than the BY328.

1.6Task 2: VI Curve of a Bipolar Junction Transistor

Objective: Build a simple circuit to observe the relation between the collector current and
the collector-emitter voltage of a BJT for different base currents. Plot the VI curve of the
transistor with measured data.

Figure 1-6: Circuit for Task 2

1. Build the circuit shown in Figure 1-6. Run the simulation in interactive mode and measure
the collector current for the transistor. Calculate the DC current gain of the transistor using
the measured value. [3 points]

I C =¿1.41 mA

IC
β= =¿ 141
IB

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2. Use the DC Sweep simulation to plot the I C of the transistor against V CE for different
value of I B. For Source 1, set the Source as V2 (as shown in Figure 1-6), Start value as 0
V, Stop value as 2 V and Increment as 0.01 V. For Source 2, set the Source as I1, Start
value as 1e-5 A, Stop value as 2e-4 A and Increment as 2e-5 A. Run the simulation and
wait for the output graph to appear. Adjust the settings such that the graph has a white
background, a grid is displayed and all the traces have a width of 2. Take a screenshot of
the graph and paste here.
[5 points]

3. Analysis Describe the general shape of the VI curves. What is the initial value of the
currents near V CE ≈ 0 V ? What is the trend in the mid region (0.1 V <V CE < 0.2V )? What is
the shape of the curves for the final region( V CE >0.4 V )? [3 points]

Near V CE ≈ 0 V , the value of current is almost zero. In 0.1 V <V CE < 0.2V , there is a sharp
increase the graphs indicating that the current is increasing the range 0.1 V <V CE < 0.2V .
After V CE > 0.4 V , the graph is almost flat now and the increase in V CE is not
corresponding into any increase in current.

4. Analysis What is approximate V CE after which the cures are almost straight lines? This is
the saturation voltage ( V CE ( sat ) ) for the transistor. [1 points]

V CE after which the cures are almost straight lines after 0.3 V. So, the saturation voltage
( V CE ( sat ) ) for the transistor is 0.3V.

5. Analysis Check the collector-emitter saturation voltage V CE(sat) at 50 mA from the

transistor’s datasheet. Compare your results with the value given in the datasheet at the
stated currents? [2 points]

From transistor, the collector-emitter saturation voltage V CE(sat) at 50 mA at 0.2 V and

from the experiment the collector-emitter saturation voltage V CE(sat) = 0.3 V.

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 Assessment Rubrics
EE363: Power Electronics – Lab 1
Method: Lab reports and instructor observation during lab sessions

Outcome Assessed:
a. Ability to conduct experiments, as well as to analyze and interpret data (P).
b. Ability to function on multi-disciplinary teams (A).
c. Ability to use the techniques, skills, and modern engineering tools necessary for
engineering practice (P).

Exceeds expectation Meets expectation Does not meet

Performance Marks
(4-5) (3-2) expectation (1)
Selects relevant Needs guidance to Incapable of
equipment to the select relevant selecting relevant
experiment, equipment to the equipment to
1. Realization develops setup experiment and to conduct the
of Experiment diagrams of develop equipment experiment,
[a, c] equipment connection or equipment
connections or wiring diagrams. connection or
wiring. wiring diagrams
are
Actively engages Cooperates with Distracts or
and cooperates with other group discourages other
2. Teamwork other group members in a group members
[b] members in an reasonable manner. from conducting
effective manner. the experiment.
Does proper Calibrates Unable to
calibration of equipment, calibrate
equipment, examines appropriate
3. Conducting
carefully examines equipment moving equipment, and
Experiment [a,
equipment moving parts, and operates equipment
c]
parts, and ensures the equipment with operation is
smooth operation minor error. substantially
and process. wrong.
Respectfully and Observes safety Disregards safety
4. Laboratory carefully observes rules and rules and
Safety Rules [a] safety rules and procedures with procedures.
procedures minor deviation.

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 Exceeds Meets expectation Does not meet
Performance Marks
expectation (5-4) (3-2) expectation (1)
Plans data collection Plans data Does not know how
to achieve collection to to plan data
experimental achieve collection to
5. Data objectives, and experimental achieve
Collection [a] conducts an orderly objectives, and experimental goals;
and a complete data collects complete data collected is
collection. data with minor incomplete and
error. contain errors.
Accurately conducts Conducts simple Unable to conduct
simple computations computations and simple statistical
and statistical statistical analysis analysis on
analysis using using collected data collected data; no
collected data; with minor error; attempt to correlate
correlates reasonably experimental results
experimental results correlates with known
6. Data
to known theoretical experimental results theoretical values;
Analysis [a]
values; accounts for to known theoretical incapable of
measurement errors values; attempts to explaining
and parameters that account for measurement errors
affect experimental measurement errors or parameters that
results. and parameters that affect the
affect experimental experimental
results. results.
Uses computer to Uses computer to Does not know how
7. Computer collect and analyze collect and analyze to use computer to
Use [a] data effectively. data with minor collect and analyze
error. data.

Total

Lab Engineer: Faculty:

Name: Abdullah Baig Name: Dr. Tauseef Tauqeer

Signature: Signature:

Date: Date:

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