Foreword GATE in Electronics & Communication Engineering GATE PRACTICE BOOKLET (Brrs & BYTES) (VOLUME -11) Dear Students, Solutions of all previous GATE Questions are already available. Every year about 20% of questions will have repetitive nature. However, rest of the questions are from untapped areas (never asked areas) and few from Previous Engineering Services & Civil Services Questions. Keeping this in view, possible questions are prepared in various ¥ UT subjects (chapter wise) along with their hints/solutions. The student is advised to practice the questions systematically so that their chances of getting high score in GATE Exam will increase. ‘The student is advised to solve the problems without referring to the solutions. The student has to analyze the given question carefully, identify the concept on which the question is framed, recall the relevant equations, find out the desired answer, verify the answer with the final key such as (a), (b), (c), (@), then go through the hints to clarify his answer. This will help to face numerical answer questions better. The student is advised to have a standard text book ready for reference to strengthen the related concepts, if necessary. The student is advised not to write the solution steps in the space around the question. By doing so, he loses an opportunity of effective revision. ‘As observed in the GATE Exam, number of sets may be possible, being online exams. Hence, don’t skip any subject. All are equally important. Itis believed that this book is a Valuable aid to the students appearing for competitive exams like IES, ISRO and Other PSU's. This book can also be used by fresh Teachers in Engineering in improving their Concepts. With best wishes to all those who wish to go through the following pages. Y.V. Gopala Krishna Murthy, M Tech. MIE, Chairman & Managing Director, ACE Engineering Academy, ACE Engineering Publications.Electronics & Communication Engineering GATE PRACTICE BOOKLET (Brts & ByTEs) (VOLUME - I) MAIN INDEX 1 _ | Electronic Devices & Circuits 1-76 2 | Electromagnetics 77-166 3 | Communication Systems 167 - 267 4 | Engineering Mathematics 268 - 325 5 |General Aptitude (Verbal & Numerical Ability)} 326 - 363 emcee keeneElectronic Devices & Circuits (Questions with Solutions)eel Gaon Page No. : Page'No, Semiconductor Physics Diodes Bipolar Junction Transistor JFET, MOSFET & Device Technology Syllabus Electronic Devices & Circuits: Energy bands in intrinsic and extrinsic silicon; Carrier transport: diffusion current, drift current, mobility and resistivity; Generation and recombination of carriers; Poisson and continuity equations; P-N junction, Zener diode, BJT, MOS capacitor, MOSFET, LED, photo diode and solar cell; Integrated circuit fabrication process: oxidation, diffusion, ion implantation, photolithography and twin-tub CMOS process.Chapter o1. 02. 03. An n-type silicon bar of 0.1 cm long and 100 um? in cross sectional area has a majority carrier concentration of 5 x 10"/m? and the carrier mobility is 0.13 m/V-s at 300° K. If the charge of an electron is 1.6x10™" coulomb, then the resistance of the bar is (@) 10° (6) 10° (c) 961.5 kQ (d) 960 MQ. The electron and hole concentrations in an intrinsic semiconductor are n; and pj respectively. When doped with a p-type material, these change to n and p, respectively. Then (b) nt+nj=ptp (©) np (@) np Two initially identical samples A and B of pure germanium are doped with donors concentrations of 1x 10° m* and 3x10 m® respectively. If the hole concentration in A is 9x 10'? m®, then the hole concentration in B at the same temperature will be (@)3 x10" m* (©) 11x10? m> (b) 7 10" m* (@) 27 x10" m* Silicon contains 5x 10° atoms per cubic metre, If it is doped with two parts per million of arsenic, then the electron density at room temperature will be approximately (a) 4x 10% m® (&) 10% m* ()2x 10° m* @ 10% m* 1 Semiconductor Physics 05. 06. 07. 08. The mobilities of electron and hole in silicon are respectively 1350 em’/V-sec and 480 cm’/V-sec and intrinsic carrier concentration of silicon is 1.5 x 10'%/em*. Then find the majority and minority concentrations of a p-type semiconductor which is having resistivity of 10 © -cm. (a) 1.3x10"5 cm and 1.73x10* em® (b) 1.3x10" em® and 1.73x10* em™ (c) 13x10" cm” and 1.73x10° cm? (d) 1.310" cm? and 1.73x105 cm? In a semiconductor, it is observed that 3/4)" of the current is carried by electrons and (1/4) by holes. If the drift speed of electrons is two times that of holes, the relation between electron and hole concentrations is (a) n=15p (b) () n=3p @ p=15n The intrinsic carrier concentration of silicon (Eg = 1.12eV) at 300°K is 1.5x10"cm", then the value of nj for Si at 400°K (Boltzmann constant K = 8.62x10°eV/K). (a) 1.5x10"cm? (b) 3.2x10"'om (©) 5.2x10"cm> (@) 6.810% em? Find the conductivity of the n-type silicon, which is doped with Np = 10'cm*, ‘Assuming 50 percent of the donors are ionized at 300°K. (tun(si) = 1000, p1p(si) = 350, p1y(Ge) = 3500 '500 are in cm’/V-sec) () 12@Q-cm)y" @ 10@Q-cmy" (©) 16(Q-cm)" (ECGDPNNIRENENTIDD erat Deti Bhopal Pune |Bhabancewar [Reng [Lae [P| Cheam Vira Vice | Tia Koka | KoleataSs agiceing Pabications 09. 10. ve 12. 1B. Electronic Devices The current density of n-type germanium is 100 A/m? and the resistivity of 0.50 —m. If the mobility of electron is 0.4 m’/V-sec. The drift velocity is anisee n-type devices are preferred over p-type devices because of the following reason, (a) Mobility of hole > Mobility of electron (b) Mobility of hole = Mobility of electron (©) For same doping n type materials give less current than p type materials (d) For same doping n type materials give ‘more current than p type materials The majority carriers. in an n-type semiconductor have an average drift velocity(v) in a direction perpendicular toa uniform magnetic field B. The electric field E induced due to Hall effect acts in the direction (@vxB ()Bxv (©) along v (A) opposite to v Mobility of extrinsic semi conductor depends on (a) temperature (b) electric field intensity (©) both (@) none In an extrinsic semiconductor if (a) The resistivity decreases (b) The temperature increases (©) The photo conductivity is low 1. The doping concentration is low 2. The length of the semi - conductor is reduced Resistivity is negative 3. The band gap is high 4, Resistance decreases 5. The doping concentration is increased 14. 15. 16. 17, 18. Codes: A (@ 5 (b) 4 Os @ 5 ‘The current produced in a Ge sample of area 1 cm * and length 0.3 mm when a potential difference of 2V is applied across ‘it[Assume n;=2 x 10! m7?) 35m*/V-sec and 0.17 ms V-sec] pew ag BeULE 1 @2A (O)LI1A (0) OSA () 100 mA ‘The diffusion current in a sample of Ge having concentration gradient for electrons of 1.5 x 10” electrons/m’ is Alm? [Assume the diffusion constant for electrons =0,00120 m/sec] Tn a semiconductor sample the electron and hole mobilities are 0.15m’/V-S and 0.06m’/V-S respectively. The diffusion constant for electrons is 3.75 x 10° m’/see. The diffusion constant for holes is (a) 1.55% 10% m/s (6) 15.5 x 107 m/s. (0) 1.55 x10 cm/s (d) 155 x 10°cm*/s 2volts supply is applied to the semiconductor bar of length 2 um, ‘Then magnitude of electric field (in V/m) at x=0.5 um is (a) 4 10° (c)2 x 10° (0) 10° (d) 3 x 10° In an N - type semiconductor, the position of the Fermi level (a) is lower than the center of the energy gap (b) is at the center of the energy gap (©) is higher than the center of the energy gap . (@) can be anywhere depending upon the doping concentration [ECSARNEMENUTTRRATD)) scree opal Pe Wasnt [taco [P| Cheus | dh [Vane | Tn [Kaagay| Kak19. 20. 21, 22. The current in a forward biased p’n junction diode is entirely due to diffusion of holes from p-side to n-side of the junction over the distance L = 10° cm. The incremental change in the hole concentration on n-side at the junction is p(0)= 10" cm”. The current density in the diode assuming ‘that fe diffusion coefficient of holes is 12 cm/sec Assuming the Fermi level Ey to be independent of temperature, Ep may be defined as the level with an occupancy probability of (0% (b) 50% (©15% @ 100% The effect of doping in _ intrinsic semiconductors is to (a) move the Fermi level away from the center of the forbidden band (b) move the Fermi level towards the center the forbidden band (c)change the crystal structure of the semiconductor (d) keep the Fermi level at the middle of the forbidden band Which of the following statements are wrong. 1. Fermi level is closer to conduction band in n-type. 2. Fermi level is not used for intrinsic semi conductor. 3. Fermi level in P side of tunnel diode is inside conduction band 4.Fermi level comments on 50% occupancy. (a) 1&4 (b)2&3 (1&2 (3&4 Given Donor concentration as 2.63 x 10cm’ in silicon sample, then the temperature at which Fermi level coincides with edge of conduction band is [Assume m= m] 25. 26. Semiconductor Physics (a) 310°C (b) 10°K ()310°%K (@) 300°K . An n-type semiconductor has its Fermi level at 0.25 eV below the conduction band edge. If the density of semiconductor in conduction band at room temperature is 2.51x10*/m*, the majority carrier concentration is (a) 1.6 x 10" /m* (©) 2.5 x 107 /m? (b) 1.6 x 107! jm? (@ 1.6 x 10" fm? Match List — I (Parameter for silicon) with List — I(values in MKS units) and select the correct answer using the codes given below the lists: List-1 A. Electron mobility B, Electron diffusion constant C. Diffusion length (hole) . Product of electron and hole concentration List 1.5x 10% 2.0.13 3.2.25 x 10 4.0.0035 5.0.02 Codes: Ay SBE 2 Oe 2D) @® 2 4 5 1 @ YG 2 1 Vong (Ymca) 4 § v3 Cy ie es a Match List ~ I (Semiconductor parameters) with List — TI (Physical processes) and select the correct answer using the codes given below the lists: List -I A. Impurity Concentration B. Carrier mobility C. Carrier lifetime D. Intrinsic carrier concentration. [RGR etc ts pat ee [Biche [Romp [new [oan Gal | Veena Vi | Tp Reply | ala8 ‘ Engineering Publications 263 27. 28. Electronic Devices List - 1, Recombination 2, Band to Band transition 3. Scattering 4. Jon implantation Codes: A B oC »D @ 3 4 2 1 @ 4 3 2 1 © 3 4 1 2 @ 4 3 1 2 The magnitude of induced hall voltage Vi in the given Figure is (Given n-type Germanium bar with doping = 1.5 x 10° em®, Bz = 0.5 wh/m?, dy=4x 10%m, Ex=700 vim, Ha = 0.38 m? /vsec, W. = I x 10° m) (@) 133 mv (©) 532 (b) 133. V (d) 532 mv Calculate majority and minority carrier concentrations to convert an intrinsic Silicon into an n- type silicon of resistivity of 10 ohm-om. [fq = 1350 em?/V-sec, n= 1.5 x 10 em) (a) 4.63%10" em’ and 4.86x10° om’ (d) 4.63x10!° cm? and 4.86x10* ony (d) 4.63x10" cm and 4.86x10° om (d) 4.6310" cm and 4.86108 em” 3 29. 30. 31, 32. 33. ESSERE) cdc Pa [Ric [Denis [oor [uC | Vl | Td ay [tam A sample of Si is doped with 1.0 x 10!7 phosphorous atoms/cm’, If the applied current is 1 mA and magnetic field strength is 10° Wh/cm?, the magnitude of Hall voltage in a sample of 100 um thick is pv. A. Si sample is doped with Arsenic, Assume effective densities of states at edge of conduction band No = 8.85%10'* em® & KT = 0.026 (Bo, Ey are edges of conduction band, valence band respectively) Find location of Fermi level (Ep) if doping concentration is 4.41 x 10" cm? (a) Er coincides with Ec (b) Er lies 0.257 eV above Eo (©) Er lies 0.257 eV below Ec (@) Ep lies 0.257 eV below intrinsic Fermi level As per Hall effect, if any specimen carrying a current I is placed in a transverse magnetic field B then an electric field "E’ is induced in the Specimen in a direction () parallel to 1 (b) perpendicular to B and parallel to T (© parallel to Land B (6) perpendicular to both I and B Which of the following is the unit of mobility to diffusion constant ratio? (a) Per Volt (b) Volt ()em*/V-s (d) Viem® The relationship between mobility (a), conductivity (11) and Hall coefficient (Ry) (@n=oRu (bl) o= Re @Rusop (@) osRineee ACE. 34. 35. 36. a7 5 we In Hall effect, which of the following is true (@) 500, 13 (b) 1000, 50 (a) Magnetic Field & Electric Field are (c) 250, 5 (d) 350, 20 induced Magnetic Field is induced & electric (fan Wok a ty : 5 silicon is 1 3,66x10 m'/C; the © ene ee ce resistivity of the specimen is 8.93x10°Q-m. | ‘Assuming single carrier conduction, then (@Hall voltage has same polarities for the mobility of the charge carriers, both n & p type semiconductors om /V-s am Determine the percentage of si atoms that . 2 See caters ates aie poe | eee ee ua Fi generated in an extrinsic semiconductor. at 300°K, (given silicon concentration as - : 1.99%10% slomalom?, m= 1.48 x 10cm"). Which of the following reason is true ? Assume that a covalent bonded (a) Band to band transition semiconductor contributes approximately feqnapee one electron hole pair per atom to the een: agai current conduction process. (©) EHP generation (0297 x10” (6) 3.36710" (@) Lattice defects will not get introduced (0438x102 = (2.27107 into bend steer Find the density of valence band electrons | 49, Find the concentration of atoms in an available to form conduction current. For a intrinsic germanium given copper specimen given density = 8.92 - gm/cm’, Atom weight = 63.54 g/mole and Ao = 6.02x10" atoms/mole, ‘Avagadro’s number = 6.023 x 10°. Atomic Weight, A= 72.6 gm/mole (a) 429.03 x 107 om* & density, d= 5.32 gm/em? (b) 858.06 x 10 cm’* (a) 4.41 x10” atoms/em? (6) 16.9 x 10” em’? (b) 82.15 x10” atoms/cm’ (@) 8.45 x 10? om’? (c) 0.226x10" atoms/em* (4) 0.01210 atoms/om* ‘Assume that we have an infinitely long ON eae n-type semiconductor bar at 300°K with an : 41. ‘Two semiconductor materials have same electric field of 1000 V/em in the positive X-direction, At t = 0, electron-hole pairs are generated at x=0 by a light pulse, At t=1 psec, the charge concentration maximum is measured as a function of x, and it occurs at x)= 0.5 cm. The mobility (in em’/V-sec) and diffusion constant (in cm’/sec) of holes respectively are properties except that material 1 has band gap at 0° K as I.leV and material 2 has a band gap at 0°K as 1.21 eV. The ratio of square of intrinsic concentration of material 2 to material 1 is (a) 0.1204 (68.71 (b) 0.0145 (d) 8.289 [SGM etn tat re ttc ner ann | rt Weed Vin | Tw ob | RoeBite 42. 43. 28: Electronic Devices Statement (1): Hall crystal can be used as a multiplier of two signals. Statement (Li): Hall voltage is proportional to the currents and voltages applied in perpendicular directions across the Hall crystal. Statement (1): An n-type semiconductor behaves as an intrinsic semiconductor at very high temperatures Statement (1): The breaking of the covalent bonds becomes a significant _phenomenon at high temperatures 44 The minimum value of 6 for silicon is (a) 3.87 x 10°(Q-cmy' (b) 1.935 x 10° (Q-cmy! (c) 2.58 x 10° (Q- em)! (d) 1.29 x 10° (Q- cm)! (EGR nap re stamens mn [Ou [Viprth oe el a VaChapter o1. Sol: 02. Sol: 03, Sol: Ans: (c) Conductivity of si due to majority carriers is Ga =Nb qbtn = 5x10" x1.6 x10" x0.13 y= 10.4 (Q-m)* Resistivity p = 1 = 0,09615 0-m o, Resistance =R = A = 0.09615 0.1107 R=961.5kQ Ans: (d) intrinsic carrier concentrations are, T= Pi according to mass action law np=n} np=ni(p) umber of electrons in p-doped umber of holes in p-doped P Ans: (a) For sample A donor concentration Np = 1x10°%m? hole concentration p = 910! By mass action law Noxp= n} => n? =1x1 ” x9x10" 9x10" For sample B donor concentration Np = 3x10"m" Ila concentration = igeeoeeton Ny 3x10" =3x10?m? 1 Semiconductor Physics 04. Ans: (b) Sol: Number of silicon atoms = 5x10 atoms/m* Sol: 06. Sol: Doped with 2 parts per million of arsenic means 2 arsenic atoms added for each 10° silicon atoms x10 x TH = 10 atoms/m? Each arsenic atom will give one ¢” at room temperature. Assuming all the atoms are ionized. Number of electrons = 10*/m? Number of arsenic atoms = © Ans: (a) Given resistivity (p) = 10 ohm -em Conductivity = 0.1 (ohm - cm)" Given intrinsic silicon to p-type silicon conversion For p-type majority carriers = holes = Na Minority carriers = Np = = = nGhts + Pap 0.1 = 1.6 x10" (Np Jn +Na tp) 0.1= 1.6x10™| Nite “Na ) 0.1 = 1.6 x10" (Nqx480) [: wie x1.6x10 = 4] Na=1.3 x10om™ 2.25x10" 13x10" =1L73 x10* em? Ans: (a) I due to electrons => I, = ngpi, EA Idue to holes => Ip=pq pip EA iver Given ,= 3 [RNGDRRONNREDS)> ete pat (Pne [aban (Bene [Lk [Pa] Cheana| Vira [Vig | Tapa Kapa [aliElectronic Devices on a 1 p=s0 ema oO _DdHEA _ mi, pqu,EA pp, a nM | [va=nk] Po Hy Ya a i] =15 p [2 07, Ans: (c) Sol: Given By = 1.12 eV. n=AyTe te my (ny a e a 15x10" _(300)"* jain law ae} 400, 18 x 10" om? 08. Ans: (a) Sol: According to charge neutrality principle, n+Na=pt+Np n= number of electrons in conduction band p=number of holes in valence band. Na number of acceptors ionized No = number of donors ionized nH = O+txt0” n=05x10" conductivity = nyinq conductivity of si sample = 0, = nin q = 0.5 x 107 x (1000)«1.6 x 10° =8(Q-em)" 09, Ans: 20 Sol: n-type germanium current density Jy ~ ngpiy B <0F = 100 Avex? 10. Sol: iL. Conductivity 6 =——-—— Y O* Resistivity 05 Drift velocity va = pn E 4 x 50 0 m/sec. Ans: (d) The current and mobility are related as J=0E J=(nep,, + pep, )E Current, Ie LA Hence lap The current through a semiconductor device directly proportional to the mobility of charge carriers. We know mobility of electrons is more than that ofholes wt, >H, Hence for the same doping levels, n-type materials give more current than p-type materials. Ans: (b) Sol: Induced electric force 12, Sok: Fy= (va x B) (for n-type) Ans: (c) For an extrinsic semiconductor mobility ShaT™ and drift velocity va = uE E= Electric field When, drift velocity saturated at v= 10" cm/sec v The = en Wo nat E [ENGR RTERNCRTERTED) dea hop | Pme | Bhanevar [Beno [anu [Pana Chea [Vinpwada [Veg | Tit [Rata | KallaPit Ficsn i: Semiconductor Physics So, in an extrinsic semiconductor mobility depends on both temperature and electric field 13. Ans: (a) Sol: In an extrinsic semiconductor, txts (A)If doping concentration is increased, SED ARISES conductivity is increased so. the (least sre ria Patty docs D; -( = =1.5x10" m?/see (B)As the temperature increases, conductivity increases and resistivity | 17, Ans: (b) decreases. So, it exhibits negative | gol; Given that V=2V, L= 2x10 em temperature co-efficient of Resistivity. v2 ‘ f (C)By using light energy, if electrons L 2x10 10°V/em=10°V/m excited to conduction band from valence band, this gives photo | 18, Ans: (c) conductivity. The photo conductivity is | Sol: In an N-type semiconductor position of low means the available light energy is Fermi level. not enough to excite the electrons N through band gap. i.e. semiconductor E,, .-xre{ Se} band gap is very high to excite the > electrons with available light energy. _EctEy 14. Ans: (b) Cente ofthe energy gap = —©==¥. Sok: 1=(y,q+pu,q)AE Given pure Ge sample => n= p= nj Ec Conduction band T=n) (jin + 1h) QAE E;, Fermi level =2110%(038--017)1.6«10"Yio {2 - Ec+Ey \oax A T=1.11A Ey Valence band 15, Ans: 2.88 Sol: Given : So Fermi level is above the centre of energy Concentration gradient gap in N-type semiconductor. = 21.5x10#electrons/m! . a 19. Ans: 1.92 Diffusion current density = — qx De Sol: =-(1.6x10")(0,00120)1.5%10") Ip=2.88 A/m* Incremental change in holes at junction p’(0) 16. Ans: (a) Minority hole Sol: Ina semiconductor at a temperature (T°K) —_ From the Einstein’s relation [RUMOURS tae tps ae [hab [Bn ace [el Gaal Vepmec Vem mel Reai12: Electronic Devices Diffusion current density of holes on n-side = gp, 2) Da p(x) on n-side is PO)= P,, +P'Oe P,, = thermally generated holes Ly = diffusion length of hole = 10° om, given Dp= 12 em/see p(X) = p,, +p')er A(X) vgye'te{ =) wo mle Diffusion current density aps) é& G0) =-1.6«10°(12) 105) odo = 1.92 mA/om? 20, Ans: (b) Sol: {E)= Ie! If Ey is independent of temperature (@E>> Ep =e") tends to 0 “A(E) = (ii) E<< Ep =e *"'" tends to 0 J=-9D, 1 1 E=Ey= f(B)= — w= AE)= =a {(E) = Probability of electron occupying energy level ‘E’ from, the above for the energy levels above fermi energy level probability of electron occupancy = 0 For energy levels below fermi energy level, probability of electron occupancy is 100%. But, at energy level equal to Fermi energy level probability of electron occupancy is 50%. a. Sol: Ans: (a) For n-type doping position of Fermi level Ep, *Ee—KT In(NoNp) Ifwe increase doping, Np increases KT In(No/Np) decreases, then E,, moves more closer to conduction band. So, it is moved away from centre of forbidden band. For p-type doping, Ep, =Ey+ KT In(NoNa) Ifwe increase doping, Nq increase, KT In(NoNa) decreases therefore Ep, moves closer to By. So it is moving away fiom the centre of for bidden gap. So in any extrinsic semiconductor as doping increases Fermi level moving away from centre of forbidden gap. Ans: (b) For an n-type semiconductor Eo Er=Kt inf Ne eer 22. Sol: Fermi level is closer to conduction band in n-type material Fermi level semiconductor. Fermi level is the energy level where the probability of occupation of electron is 0.5 Ina tunnel diode Np > Ne; Na>Ny hence Ep—Ey= xr xe) exist in all types of N Ep — Ey is negative in tunnel diode Hence Fermi level lies below valance band_ 23. Ams: (c) N Sol: Ep, = Ec—KT (Be) p Emm = Eo => KT uf R)-o ed Del Rhopal [Pane [Boater [Bena [Lucknow |Fana| Cheam |Viayvade [Vig | Tawa Rampal | Koka@.AS.... 24. Sol: BR Sol: 26. Sol: ACE Semiconductor Physics Ne=Np 4 4.82 x10" (2) em” =2.63 x 10" cm m Assume m, =m Then T =310°K Ans: (b) Position of fermilevel in an n-type semiconductor with respect to conduction band gives as N, E,, =E¢-KT én] S& cnaemral se) Given Ec —Ery= 0.25 eV = KT In (No/No) oasey -omnsi{ 251210 ed Np= 1.6 x 10°'/m* Ans: (6) For silicon (a) electron mobility = 1300 cm*/V-sec = 0.13 m’/ V-sec (b) electron diffusion constant = D =nVr= (0.13) (0.0254) 0.0035 m’/sec (©) diffusion length of hole = 0.002 m (@) product of electron and hole concentration 5x10" f= 2.2510 /om® 25x10" m* np =n} np =n? Ans: (d) (a) Impurity concentration is added in the process of ion-implantation by adding dopants. (b) when the temperature increases lattice vibrations increases, so the free e present in crystal collides with atoms and mobility of carriers changes. This is called scattering mechanism, (c) when the carrier moves freely, after it’s life time it falls from conduction band and recombination takes place. (@) when the temperature inereases, band to band transition takes place and electron hole pairs generated which is known as intrinsic carrier concentration. 27. Ans: (d) Sol: L=oE.A A= Way [from the given figure] S=P Hn Tx => P Ha Ex. W.dy vy, = Bite Ex Wily By p.W Vu Ha Ex dyBz Vur= 0.38 x 700 x4 x 10° 0.5 32x10 V Ans: (c) For intrinsic to n-type conversion Majority carrier concentration = Np 28. Sol: Minority carrier concentration = Na = s p Np Ha 0.1 = Np x1350x1.6 x10"? Np = 4.63 x10" em 2.2510" > 4.63x10 N, = 4.86% 10° em= Ans: 62.5 : Hall voltage y,, = BI pw 6 x10 Clem? 105 x1<10" 6% 10 x100x10* 625 x 10+ 2.5 WV Vu [HARRIS am re [in Daw nos [Genel po oe30, Sol: 32. Sol: 33. Sol: Electronic Devices Ans: (6) As the Si sample is doped with Arsenic (V group element), it would form a n-type semiconductor For a n-type material the relation between E, &E, is given by z =ara{®) here Ny is dopant concentration aes 0" —E, ~0926%4 S850") _ EE, 0026 can} 0.026 n(2x10'JeV Es lies 0.257 ev below E. Ans: (d) As per Hall effect it is stated that if any specimen carrying a current I is placed in a transverse magnetic field B then an electric field “E’ is induced in specimen in a direction perpendicular to both B and I, Direction of E= Bx7 Ans: (a) drift velocity vy = E couse, Ys OE _ cm/sec em “ vlem ~ V=see. Diffusion constant Dy = Hy Vr sy, —He - mt lv.sce D, em* / sec 1 is Hy units of —2 fp. 8 Von O Ans: (a) VaW ar” Ye The Hall constant Ry, = and o=new 1 Ry Ry o: 34. Sol: 35. Sol: Sol: By using this equation we can calculate the mobility of charge carriers by Hall-effect Ans: (¢) Hall Effeet: A metal (or) semiconductor specimen carrying a current along its length when placed in a Transverse magnetic field; an “Electric field” will be induced in a direction perpendicular to both current and magnetic field. This is called “Hall Effect” so in Hall effect magnetic field is applied and electric field is induced Ans: (a) Given n, = 1.48 x 10'° cm, the number of Si atoms contributing to a conducting electron hole pair. Total number of Si atoms N= 4,99 x 10” atoms/cm? Now percentage of Si atoms contributing current conduction is given by L199 = LA8x10" N 499x107 = 0.297 x 107 «100 Ans: (d) Avagadro’s number (Ag) = 6.023 x10" atoms/mole Density (d) = 8.92 gm/cm* Atomic weight (A) = 63.54 gm/mole Atomic concentration = a = 6.023 x10" «8.92 63.54 = 8.45 x 10” atoms/em* Density of valence band electrons available for copper = (Atomic concentration of Copper xnumber of free electrons per atom) = 8.45 x10” atoms/em* (EGGSDBRRNNITERID) cote ea hcpa Pe abeovar [Beg [Lack [Pana] Chena Vira Vong | ipa pally | bn8 4 Engineering Publications Semiconductor Physics 37. Ams: (a) Sol: Given electric field E = 1000 V/em Att= 0 EHP generated at X = 0 ‘Att= I microsecond, maximum occurs at xp= 0.5 cm 05em-0 drift velocity = ee velocity =r, (0s =0.5 x 10° cm/sec Mobility 4 = = 500 cm’/V-sec Diffusion constant relation Eve H (D) by Einstein’s 0.026 V at 300°K (500) (0.026) 38, Ans: 414.4 Sol: Ry =3.66 x 10* m’/c. Resistivity (p) = 8.93 x 10° Q- m ‘Assuming single carrier conduction Ru ~ charge density peeeal 1 Charge density = 5—= 3 3 =2.7%10° ‘Conductivity o = resictivity 1 © 893x10 =1119 = (charge density (mobility) 111.9=2.7x 10° xp 1=414.4 om’ /v- see 39. Ans: (b) Sol: The temperature 50°K (or) 100°K is capable of exciting the donar atoms (or) Acceptor atoms in a extrinsic semiconductor, because they need very low energy of the order of 0.03 eV for excitation, Ey + Bl otsgt ‘type Germanium Semiconductor For Ge Eyo) = 0.01 eV For Si Eyo)= 0.05 eV 40. Ans: (a) Sol: Concentration of atoms =A 6.0210 x5,32 26 = 4.41 x10 atoms/cm* 41. Ans: (b) Sok: n? =A,T’e **" ATicreens ADetaT (is Fon™T = 9.0145 42. Ans: (0) Sol: Hall voltage is given by, _BIRy Ww For a given current, hall voltage Vi is proportional to magnetic field energy. e..Vi1_& B. If current I made proportional to one input and if magnetic field density, B is proportional to second input then hall voltage is proportional to the product of two signals. 43. Ans: (a) Sol: At very high temperatures band - band transition (breaking of the covalent bonds [RAND asap ct en wm ae Te aan$B tcc _ 16: Electronic Devices at high temperatures) dominates impurities ionization, Hence n = p+ Intrinsic semiconductor. 44, Ans: (a) Sol: Now n, and Guin = (Ppp +My Hy cut fle ry of Hp Ba Sui =2 1; fMnbhy Frying =281.5% 10" ¥1300x 500 x1.6x10” =3869,88x10" (Quem)? 86910 (Qem)" ISARTDAE ) yca paspa Raw neeapne [na nGenal aseon es2 Diodes on. 02. 03. 04. 05. In an abrupt PN junction, the doping level on the n-side is five times to the doping level on the p-side. The ratio of the depletion layer width from p-side to n-side is The built-in potential in es silicon diode is at 300°K is [Na= 10'/em’, No= iO en 1 The depletion width of the p-n junction diode is (¢,= 12). [Na = 10'/em*, Np = 10'*/em*] (a) 0.33 mm (b) 0.003 mm (©) 0.33 um (@ None Consider a step graded PN diode with No= 10° Na. Assuming 1 acceptor atom per 10* Ge atoms, Calculate Vo, if Ge concentration = 4.41 x 10” =2.5 x10 cm® (a) 0.126 V (6)3.3.V (©) 0.033 V (033 V For a silicon p-n junction diode, the applied forward bias voltage is V, = 0.65V and the reverse saturation current density is 4,15 x 107'A/em? at T = 300°K. The total forward bias current density is (@) 10 mA/em* (©) 14 mA/em? (©) 5.56 pA/em” (d) 11.13 pA/em* For a silicon p-n junction diode, the applied forward bias voltage is V, = 0.65V and the reverse saturation current density is 4,15x10"'A/em? at T = 300°K. The electric field required to produce a given majority carrier drift current with 07. 08. cm? and pa = 1350cm*/V-s is (q=1.6x 10%) (@) 14 pV/em (©)5.15 wV/em (b) 3.74V/em (@)73nViem Barrier potential in a PN junction is caused by (a) thermally generated electrons and holes (b) diffusion of majority carriers across the junction (©) diffusion of minority carriers (@) drift of majority carriers A Ge diode is operated at a forward current of 10mA with Vp =0.3V. If Vp = 0.4V, find forward current in mA. (Assume Vr = 0.02587). (a) 4.773 (b) 0.021 (©4773 (021 At what value of Vp, reverse current of a Ge diode will reach 99% of its saturation value. (Assume V+ = 0.02587) (@)-0.2382 V (6) 0.896 V (©)-0.1196 V @ 0.1191 V The increase in forward voltage drop of a ‘si’ diode, if current through it gets doubled is mV. At a junction temperature of 25° C. For what forward voltage drop 1, =I, -1) can be approximated as Ip = he’? with less than 1% error, for a Ge diode (Given K = 8.62 x 10°* eV/°K) (@) Vp>0.1194V(b) Vp>0.1186V (© Vp<0.1194V (4) Vp <0.1186V COPt. 12. 1B. 14, 15, 16. Electronic Devices Find the Factor by which Ty of germanium diode will get multiplied when temperature is raised from 25° to 85°C “Foo use J, =KT"e™T (K, independent of temperature, m ~ 2); Ego = 0.785 eV. (a) 6846 (b) 59.22 (©) 175.09 (2419 ‘The P and N sides of a silicon diode has resistivities of 2Q-cem & 1Q-cm respectively. Find height of potential barrier. (Assume 1, = 1300 cm” / V-see, Hy = 500 cm’ / v.see, Vr = 26mV) (a) 0.66 V (b) 0.06 V (©0.76V (0.83 V A Ge diode is operating at 100°C with Io = 20 pf A, Its dynamic resistance at 40.1 V,—0.1 V respectively is (a) 676 Q, 36 kQ (b) 676.0, 15.24 k2 (© 71.72, 36kQ (71.7 2, 15.24 KO A silicon diode ly = 6A current flowing through it if + 0.2 V, 0.3 V is applied to it respectively is. (a) 13.15 mA, 615 mA (b) 13.15 mA, 1.9115 mA (0) 13.15 mA, 6.15 mA (4) 274.8 pA, 1.915 mA In an open circuited PN diode xpo, Xo are penetration of depletion region into p, n sides under open circuit condition. With X00 > Xpo, Say the diode is reverse biased then (2) S10,X,0 increase equally (b) Xo, x;0are unaffected (©) increase in Xyq > increase in x0 @) increase in x,0 > inerease in xno 7. 18. 19. a4. In a semiconductor diode, the barrier potential offers opposition to only (2) free electrons in n-region (b) holes in p-region (©) minority carries in both regions (@ majority carries in both regions A Si PN diode is considered under open cireuit condition, with doping on n, p sides as 1 x 107 em? & 25 x 10 ® om? respectively. Given intrinsic concentration as 1.5 x 10! em, Find shift between Fermi level in n side with respect to intrinsie Fermi level. (2) 0.49 eV () 0.492 eV () 0.901 eV (d) 0.409 eV A PN diode is doped with 1 x 10cm, 2.5 x 10" cm® in p, n sides respectively. ‘What is the ratio of penetration of depletion region in p side to that in n side under open circuit condition (a) 25 (b) 0.25 (©) 250 as Doping in p side of PN diode is Four times that of doping in n side. Given width of depletion region under open circuit condition as 8A°, Penetration of depletion region into n side is (a) 1.6. Ae (64 Ae (b) 0.4 AS (A)7.6 AP A diode was carrying @ current of 10 A at 305°K, If temperature is increased to 320° K, then current in the diode is (@) 38.28 A (b) 28.28 wA (0) 282.8 nA (d) 0.2828 wa. [ROGAN iced asin [Pe hcmone Reng HLakacw Pm] Chen [Vion [Ving] Tropa ply | ReliesCt. nn 22. 23. 24, (89: Diodes For aPN diode No= 10! em, Na =4 x 10" em, © = 104.43 x 107+ F/om, open circuited contact potential Vp = 0.467V, q= 1.6 x 10°” C. Width of depletion region under open circuit condition is, (a) 2.472 x 10°°em (b) 6.11 x 10cm (©) 848.6 x 10%cm (@) 24.72 x 10%em Which of the following statements are true with respect to a tunnel diode? 1)1, / ly ratio is maximum for GaAs tunnel diode 2) Itis a high speed device 3) Peak current Ij< valley current Iy 4) In reverse bias tunnel current = Ip 5) heavy doping is done only in N side 6) negative resistance is exhibited in reverse bias @) 1,2,5,6 (b) 3, 4, 5,6 @1,2 (3,4 In the circuit of Fig. assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read Di : Kk 4 sin ot volts 310K H0K (a) 04 y2m (b) 0.4mA (©) 0.8/0 mA (@) 0.4/n mA 25. 26. 27. In the circuit of Fig, the current ip through the ideal diode (zero cut in voltage and forward resistance) equals fers % Ai Df © saz 198 2a) tov (0A 4A (1A (@None of the above Assuming ideal diodes are used, the output voltage for the given circuit is Ik AW Dy, 6k KE Ly 9 tefl @75v ()25V (ov @t0v For an open circuited PN diode given Vo open circuited contact potential, Mao, tye free electron concentrations in n, p sides Pho, Ppor hole concentrations in n, p sides which of the following equation is valid. (a) V,=KT (2) (b) V, =KT a(t) Pro (© V=KT (2) Do, (@) Vy =KT. {as Tipe Hyderabad Del Bhopal Pane (Bhuscavar [Benga Lack [Paa| Chena | Viper Ving | TpZ ACE $B it Rossin 220: Electronic Devices 28. Assume Ico, Iso a8 reverse saturation 1k currents of Ge, si diodes which of the in following is a valid relationship between I and V : . a aie 6. or B0.7k0 Lr tet - L it Ge lh Kt {t Iv (@) 1= [hoot ?e™ (b) 1=[Igolso |e) (0 t-te) (6 1a} 29. Two ideal & identical (ideality factor 1 = 2) junction diodes are connected in series as shown in the figure. YM ve - kt Dr tN ly Dy toon 10V tw — | ae Vi and V2 are voltage drop across the diodes. Then the value of PAT 4 gine {a4 (3 (b)2 @1 30. The current “I;” in the circuit shown in figure is___ mA. 3h. 32. In the given circuit, using simplified model for Dj, piecewise linear model for Dz & ideal model for Ds, Vr= 0.7 V, = 209, then Vois__V. Vo in the given circuit is (assuming V, as sine wave varying from +15V to -15V) 10V © ov 12 =43 [ERGOTRON Hvcraind ei whonal | Pune |Bsbaneswar | enw Lnekner|Pama| Chennai |Viswswada Vin | Taal (Koll KolaA. 33. 35. Diodes w ov T/2 -47 Which of the statements related to a Zener diode in Zener break down is true (a) Internally Field Ionization takes place (©) Internally Impact Tonization takes place (©) Internally carrier multiplication takes place (d) Internally Avalanche multiplication takes place For the diodes in the circuit, given dynamic forward resistance = 10 0, dynamic reverse break down resistance = 200. Assuming all diodes are made up of similar material and identical in construction, I in the circuit is (@) 10mA. — e001 R -10 mA Oaom Paar (©) -19.5 ma. it @ 19.5 ma ply, NVA 10V The two zener diodes of the circuit have negligible forward voltage drops and both diodes are safe, if 50 mA B>C>D —(b)A Vy (a) 1and 3 (b) 1, 2 and 4 (©)2,3 and 4 (d)2and4 Isolation is not possible in a tunnel diode between input and output, Which of — the following reasons is true? @h>h (b) Ge or GaAs used in design (©) Two terminal device (4) High speed operation A ‘PN’ diode in forward biased condition is suddenly reverse biased at t= 0. Assume t, as minority carrier storage time, as transition interval. Then voltage across diode is negative during (@ only (b) t only (ttt @Mt-k 57. 58. 59. 60. In a ‘PN’ diode, reverse recovery time is more important than forward recovery time. Which of the following reasons is true? (a) more number of minority cartiers are injected, hence sweep back takes more time, (b) more number of majority carriers are injected, hence sweep back takes less time. (©) minority carrier storage time t, will occur after transition interval t. (@) concentration of minority carriers does not depend on doping Which of the following relations is not valid for a PN diode ? v eA @) r=sfon(}-] OMG= w ia Oo-%, Over In a Ge PN diode width of depletion region = 24210 /V,—V, m Given ¢ = 141.584 x 10"? F/m, A =Imm’, Barrier potential under open circuit condition = 0.2 V, Np >> Na, Na=3x10" cm, Transition capacitances for 10 V reverse bias and 0.1 V forward bias respectively are (a) 18.3 pE, 185 pF (0) 44.6 pF, 185 pF (© 183 pF, 447.7 pF (d) 18.3 pF, 81.5 pF Match List-1 with List - 11 List -1 List- 11 P.GePNdiode 1. Heavy doping QSiPNdiode 2. Reverse current very low (nA) R Zener Diode 3. Forward cut in voltage is less [REREAD cahnt nasser Rens [acc Plone | Vad Ving Twp tpl [laaew .. S.Tunnel diode 4, Voltage Regulator 5. Excellent conduction in Reverse bias @P3,Q2,R4,S-41,5 (b)P-3,Q.2,R-4,S-1,4 ©P2,Q3,R-4, 5-5 @P3,Q4, R41, S-5 61. Match items in List - I with items in List - II, most Suitably. LIST-1 A. LED B. Avalanche photodiode C. Tunnel diode D. LASER LIST - If 1. Heavy doping 2. Coherent radiation 3. Spontaneous emission 4. Current gain Codes: BOE pls Lig Ath (a) I 2 4 3 (Dai aa? 3 1 4 Os BF side A io 2 GI od Zo rik 74091 =3 62. A particular green LED emits light of wavelength 5490 A°. The energy band gap of the semiconductor material used there is (Planck’s constant = 6.626 x 10-**J-s) (@) 2.26 ev (b) 1.98 ev ©117ev @074ev 63. In a LASER, the following processes have to be minimized: (a) spontaneous emission only (b) absorption only (©) absorption and stimulated emission (@) stimulated emission only Diodes 64. Match the following and choose the correct combination Device P: Si diode Q: Ge diode R: LED S: PIN diode Property 1. Cut-off wavelength 2. very low reverse current 3. high frequency application 4. low forward bias voltage (@) ®o © @ P20 P3 P4 PL Q4 Q4 QI Q2 Rl RI R2 RB 83 [32033 54 65. Match the following and choose the correct combination Operating point P: I quadrant 1. Solar cell 2. Photodetector with high sensitivity 3. Photodetector with low sensitivity 4, Rectifier diode (a) o © @ P-2 P33 P-4 Pel 3 Q4 Q3 Q2 R4 RI R2 RB S-1 S2 Sl S4 66. Consider the following statements LASER is an acronym for light amplification by stimulated emission of radiation. In comparison to LED it has Sela Electronic Devices 1. Higher emission efficiency 2. No tuning arrangements 3. Narrow spectral width 4, Provision for confinement Of these statements, which of the following are correct ? (a) Land 3 (b) 1, 2and3 (©) 2,3 and 4 (@) 1,3 and4 67. Which one of the following diodes contain a ‘metal semiconductor junction. (a) Tunnel diode —_(b) Zener diode (©) Gunn diode (d) Schottky diode 68. The phenomenon of injection electro- luminescence is the basis of working of (a) photo diodes —_(b) photo transistor (©) LASER (@LED 69. Which of the following statements are conect 1, In LED stimulated emission occurs 2. In LASER Avalanche multiplication occurs 3. In APD current amplification occurs 4,In PIN diode light to electric energy conversion occurs (1&2 (b) 1,283 (2,384 (3&4 70, The following statements are related to a tunnel diode, 1, Fermi level lies inside valence band in neside 2, Excellent conduction is possible in reverse bias 3, In reverse bias negative resistance is exhibited 4. Vp>W 5. Itean act as oscillator 6. Ip magnitude is decided by impurity concentration and Junction area. 7. 2. B. 7. Ge tunnel diode is used for commercial applications. Which of the above statements is false. @1,38&4 (0) 1,3,4&7 ()1,3,4,68&7 (A) 2,5,687 The wavelength of light emitted by GaAs laser is 8670 x 107° m Given Planck’s constant = 6.626 x 10™ Js, velocity of light = 2.998 x 10° ms". The energy band gap of GaAs is. {a) 22.93eV (b) 1.43 joules (©) 143 eV (d) 22.93 joules 8x 10° photons are incidented on an InGaAs PIN photo detector which has a quantum efficiency of 86% and energy band gap of 1.47 eV. Find maximum wavelength (that can generate current) and number of EHP’s generated. (a) 0.844 pum, 6.9 x 10° EHP’s (b) 0.844 A®, 6.9 x 10° EHP's (c) 1.185 pm, 1.1 x 10° BHP’s (@) 1.185 A®, 1.1 x10° EHP"s The driving circuit shown in circuit has a peak ofp voltage of 8V. The LED has a rating of Vp = 1.8 to 2.0V and Inns) = 16mA. Which of the following statements is true? Driving circuit ZR We yu @) Rymay = 375 2 (b) Ramin) = 387.5 Q (©) Retmany = 387.50 @) Ream 2 387.52 (CGRP > yceratad net onal [Pune (Butonenrar (engi Lacks (Pana Cena | Vivace [View | Two [Kakapa | Koda[ 2 Diodes a Chapter 03. Ans: (¢) Sol: depletion width 01. Ans: 5 we |2€ Get} Sol: Given Np=5 Na a (Nn Ny Depletion width on P-side eee €0= 8.854x10" Flom = 12 We 2xi2xRasax10 x VY 16107 W=3.3x10% cm W=0.33 um, 02, Ans: 0.835 Sol: Built in potential in si- diode is 04. Ans: (d) was Sol: Given a step graded PN diode with Vo= KT In| 2A fi No =10°Na number of Ge atoms = 4.41 x10” cm™ ny =NoNy eX. ee nj=2.5 x10" om For silicon One acceptor atom per 10* Ge atoms % + He Fo ovex) =E oy ~3.6x104T fence 4.41x10” Parte 1.21 -3.6 x 10°(300) Ny =o = 44x10" om? Eg=11eV . a? =NcNy e“Pa/kD => Np=4.41 x 10"? cm? Ze) KT, (NAN, 8x10" x1x10! ¢ oes) Vy = Mate) [x x fs x10" @ q n ( 18 x 10° 4.41x10" x 4.411 Vy = (0.026)¢n| E ( 6.25x1 10" x10" =0.026in| —~o— Vo = (0.026) (12.649) oe ° Vo= 0.835 eV Vo = 0.3288 V [EXEMENENNTRNROID) ten cpt ne nts [wir cio [Cal Vio Vier | Tra [Rua | Ketana 05. Ans: (d) Sol: Given, forward bias voltage V= 0.65 V Reverse saturation current density 3.24.15 x 10 Alem? At T=300°K = Vr= 0.026 V Diode current equation for silicon is 1= 1," -1) and y= 2 1.13 x 10° Alem? 06. Ans: (¢) Sol: drift current density Jy = nga for electrons J =Nog Ha E _ 11.13% 10°° 10" x1.6x 10 x1350 5.15x10% vom 07. Ans: (b) Sol: When P and N materials are brought together closely, due to the concentration gradient excess electrons on the n-side try to move towards p-side, similarly excess holes on the p-side try to diffuse towards n-side. While they moving across the junction, the immobile acceptor and donar ions are left at both sides of the junction, As these immobile ions are ionized positively in n- side and negatively in the p-side, an electric Gicld is ercated at the junction opposite to the force of diffusion. So after some free electrons and holes diffused across the junction, the further diffusion is stopped by intemally generated electric field. The region which contains immobile ions is called the “space charge region” or “depletion region” or “potential barrier” and this is due to diffusion of majority carriers across the junction. 08. Electronic Devices Ans: (¢) Sol: The current equation of a diode is given by Ye raft | Here Ip is the reverse saturation current, In= 10mA; Voi = 0.3 V and for Ge T=? Vin“ 04 yl Cen=l) Neglecting (-1) on the RHS (Yes Xa} aes aly) =(omayenes" 10x e** =10x 47.7262 Ip2 = 477.26 MA Ans: (d) Yo Sol: Diode current equation is info -} Given [l] = 0.99 Ip, is possible when diode is Reverse biased and in Reverse bias current direction changes, hence .99 Ip (asked to find reverse current) Ye -ooe1,=1 - ( we e% =1-0.99 Vp =Vrin (0.01) Vo = (0.02587)(-~4.6051) Vp =-0.11913 volts, Here the Vp is negative because the diode has to be reverse biased to flow a current less than reverse saturation current. 1 for Ge) [SAR NTRRND ica P Rrr ee TPC Vpn Wl Rst ees Engineering Publications 299: Diodes 10. Ans: 36.04 12, Ans: (d) Sol: The diode current equation Bie, vy Gi i =KT™e@T/) m9. Tbe" -1) in forward bias we can | 50! Givenrelation I, =KT*e™"9) m=2; 5°C = 298°K neglect “-1” factor 85° = 358°K; n= 1 forGe Obey 1," inten) T [vEg,=0.785eV for Ge and Vo, = 0.785 V] a dg = 02569 KT et V2 Voi = (2x 0. h Vz, == =—12_ = 0.03086 'pa— Vou = (2x 0.02600) In(2) a. ieo 7" (= 2 for si) (2 Vi=26mv) 2-(3y 0% are V2 ~ Voi = 2 x 0.026 In(2) I 298 AVp=36.04 mV Joa. < .44320)q078924027-12.40 fat IL Ass; (b) x = (1.44322) (167.67) Sol: I, -1(- =) Pe = 241.984 lt a ‘The approximated equation I,, =I, e"" 13. Ans: (a) Given the error of approximation should be | Sol Given p, =2Q-cm less than 1% of the original. py =1Q-cm Be error when approximating the equation 1, = 500m? /v sec is Hence h, = 1300em? /v.see Yo gyal Ts coon ] Stas 1 Me o, == 101< e™ (Vp= Ps [Given K = 8.62x10° eV/°K] Op * Nally. xe >/n(101) (“7 = | for germanium ) + Vp > 8.62 x 10x 297 In(101) 6, * Noting Vp> 0.118156 volts 1= ¥9(1300) (1.6x10-) [RASHEED neal Pn [tam [Repo inhnow Pm Gan |p Vig [fa Raa_ ACE Engineering Publications N= 4.807x 10" cm? ‘Now the potential barrier height, (V,,) is AT (NaN Vy = AT] NaNo 4.807 «6.2510 Vg, = 0.026 in) “AP*O29%10 ‘ of 2,25%10" V,,= 0.6665V 14, Ans: (6) v Sol: T=1,(e™-1) (n= 1 for Ge) 1=20x10~ (e215 1) at T=373°K 1=428,39pA ine nv, Dynamic resistance(r)= “ aa Le 32155 =< 20x10" x @0m2HS - 0,032155x10° 448.39 r=71.7Q aeyjconyy =7LT 0.032155 Tygs-1v) = Ox 10-6 gia 032155 10° 0.0892, = 0,03604 x 10° 1=36.04kQ 15. Ans: (4) Sol: Given I, -6uA;1=2 forSi v ae" 1) 16. Sol: 17. Sol: : Given Ny = Electronic Devices 2 x10 (225 _ 1) 1,=6 x10 $(46.81=1) =274.8nA, & (e™ =I) I, 10° (e795 4) 1, =1915.7pA, 1,=1.915mA Ans: (¢) Xn > Xo means n side doped less hence when reverse bias increases penetration into n side further increases. i.e, depletion region penetrates more into lightly doped region. ‘Ans: (4) Immobile ions of barrier oppose majority cartier diffusion of p and n sides. i.e, it acts as barrier for holes in p side and electrons in nside, Ans: (4) Given Ny =1x10" em Ny =2.5x10" om &n, =1.5x10"em* we know Fermi level is constant through ‘out the material E,-E, ern (%2) inside a 107 Ey- B= 0.026 of; a = (0.026) (15.7126) E, —By, =0.4085ev Ans: (a) 0" cm? 5x10" em? No W, Np _ 25x10" WwW, Ny 10” We know =25 [EGGERT ye en pat eaters [Bers Le [Pah | Vise Via | Te [aapaly| KotesDiodes 20. For positive half cycle Sol: Voltage across D =~ 4sinat <0 => off Voltage across D, = 4 sinot> 0 = on I + ® ae ai Fira Sol: Se} =10x2)5 = ; Tn =10%2! =28.280A I ee = 04 sinot mA 22. Ans: (d) For negative half cycle Sol: Given N, =10"*cm™;N, =4x10" cm" Voltage across D2 =~4 sinat > 0 => on €=104.43x10"“F/cmandV, = 0.467V Voltage across D; =4 sinot <0 => off The width (W) of the depletion region is given by ef 1 W= J-|—+— |v, ty, {lhe tme = [2x104.43x10-" Ie 46; a1 O67 (10 0.25410) = ¥60.961x10° x100.25x10™ = V61113.415x10-" = 247.211x107 cm W= 24.72 x10 em 23. Ans: (c) Sol: Vely. Negative resistance is exhibited in Forward bias Ammeter reads average value 24, Ans: (d) i= Ia 4mA Sol: Initially open circuit both the diodes, and we Cadena check voltage at their ends. Asinot 0 @ H4sinot fin 9 Foi 10k 25. Ans: (¢) Sol: Initially we have to check whether the diode is forward biased (or) not for that open circuit diode & find voltage at it’s both ends. (SD a fs ees nS132: Electronic Devices 40 6k _ 60 uve BY. Vv, 10x 7 volts ravey 4 V; =V, =60/7 volts wv 40Esy avg 20) ‘The total 60/7 volts will be dropped across — Reverse biased diode D2 and hence the output voltage V, Diode is in forward bias and given it is a ideal diode. So can be replaced with short | 27. Ans: (a) citi, gy, Sol: wy 49 (ea 28. Ans: (a) Sols Given circuit Mo Lvs Applying Nodal analysis oF o +i+2-2=0 4°44 qT Dy is forward biased and D2 is Reverse diased The above circuit can be redrawn as ik Dy Ww tt VEox one | 10V Ett Ds a egandI=I,, ¢ ¥ From (1) & (2) 1 Slely,| oT =1=(Ig, Ans: (b) from the figure it is observed that D, is forward biased, Dp is reverse biased. a Current through D; = 1p, 1%) # 5) D, ov ~ I, e*" -1| = —1,] 2x _ A ORT 4 git 29 (Current through Ds = 1), From fig, 1,, = 30. Ans: 4 Sol: Initially open circuit both the diodes and check whether at the open terminals, the voltage is more than cut in voltage of diode (or) not. 1k Ww serv a oe Zo7 -6.7V 0V Both the diodes will ON. Replace the 31, Sol: Applying KVL in the loop —6.7+1 x10 (i) +0.7+1=0 =>i=SmA iil mA=4mA Ans: 1.6 Simplified model of diode D, is V,=0.7V Piecewise linear model for D is Vo = 0.7+ 0.7 +20 (10 mA) diodes with cut ~in voltage sources ee [ROWSE inne Pee ico Joan Rao (ine Ta ay [ae33. Sol: AS the input is sine wave varying from +15 to -15v, for positive half cycle of input, for the voltage V,>(10+0.7)V, the current will flow through circuit, and the output voltage V, will be V, =V,-(10+0.7\volts & max V, =15-10.7 = 4 3volts for the input voltages below 10.7 volts the diodes together will not conduct and no output Ans: (a) In Zener diodes, break dowa occurs by two methods (i) Under high reverse voltage, for heavily Gi)The minority carriers flowing through 134: Electronic Devices doped PN diodes, the applied electric field acts across the junction, due to this high clectric field some of the covalent bonds of intrinsic atoms will be broken inside the junction, leading to a large number of free minority carriers, which suddenly increases the Reverse current. This is called “Zener | Effect” and is due to “Field Ionization” at the junction, the junction acquires a kinetic energy which increases with the Reverse voltage. At a sufficient high reverse voltage (say above Sv) the kinetic | energy of minority carriers become so large that they knock out electrons from the covalent bonds of the semiconductor material. As a result of collision the liberated electrons in turn 34, Sol: 35. Sol: liberate more number of electrons and the current becomes very large Teading to the breakdown of the crystal structure itself, This is called “Avalanche break down” So Avalanche break down is due to “cartier multiplication” ‘Ans: (d) Circuit can be redrawn as 950.0 vad . lov pe = 07v 10a + op ov 109 Hence I +20+10+10 19.3 I= —= = 19.5mA 990 Ans: (b) ‘The given circuit is Given the input is a square wave with 10v amplitude so the input will change between +10 and ~10 volts when Vi = 10v; D2 will be in break down region and D, will be in forward bias condition, under this condition the current I following through the circuit is 10-5 5 =>== = 250mA 10+10 202 [SE OATPENERERD) th [area Jor en Ce Vins nee apy [A36. Sol: 37. Sol: —10V; D; will be in break down region and Ds will be in forward bias condition, under this condition the current I flowing through the current is 10-8 2 > = 1001 10+10 202 a Hence in both cases the current through the circuit is in the limits of 50mA 5 => avalanche effect Zener effect is generally found in heavily doped diodes, where as avalanche breakdown generally occurs in lightly doped diodes, The V-T characteristics of zener diode are 1 Ww Zener breakdown has got temperature coefficient ie, x s tye. positive Avalanche breakdown has got negative temperature coefcient ie, $¥za ieS. tz 18 practically very small , zero in ideal case, as it has to maintain constant voltage (V.), hence AV, ~ 0. A general voltage regulator circuit using zener diode is given below. 4 ie , I. Vn x, Be Rs = Limiting Resistor Ri=Load resistor ‘Two germanium zener diodes are connected as shown. Assume break down voltage of each diode as 6V P + Dr Vi Vs 38. Ans: 0.344 i Ve ~c[e fe] [2 x10" {2x10 Vs = (0.026)en) Pees =0.673V w=( | 1.510" at Ve~5V sy : 2 =0.344pF G O al = C,=0344p 39. Ans: (@) Sol: The range of zener current through D; is 15 mA <1, <300mA and current through Ds is 12mA Vin = 112.2 Vi = 100.2 Ans: (b) ‘The V-I characteristics of tunnel diode are Peak point Here in the above characteristics, between peak point and valley point as voltage increases the current goes on decreases. Then, Dynamic Resistance = * -Ve So, tunnel diode exhibits negative resistance, 50. Ans: (a) Sol: Schottky diode tums off faster with respect to P-N diode, as it's switching speed is very high because of zero diffusion capacitance and very Icss transition capacitance. [ASEAN ) n'a apf fi nnn mn Gn [Vio Nes To oa [ElsSol: Schottky diode is a metal-semiconductor Junction, so it will have a very low cut-in voltage. I is approximately 0.1V only, For tunnel diode even for just above the zero bias i.e, For V, > 0 also there are filled states parallel to empty states, so, it starts conducting, So tunnel diode has a cut-in voltage almost equal to zero, So order of cut — in voltages are Si> Ge > Schottky > tunnel. ‘52. Ans: (d) Sol: P, Tunnel diode: For tunnel diode in reverse bias always there are filled States parallel to empty states. So, the carriers can tunnel through the depletion layer easily and gives excellent conduction, Ve ° Ta Q For zener diode, we operate it only in the Break down region as a voltage regulator. Vs y,, i. i R. Avalanche diode Break down takes place due to impact ionization and is generally takes place in the lightly semiconductor diodes, So, Break down voltage for avalanche break down is high compared with zener. Sol: Vi Vip 0 S. Switching diode is a Normal Pn junction diode can operate in Reverse bias upto breakdown voltage only and gives very low Reverse saturation current, nt Ans: (d) Ge bo a 1 jE - ~20V + 20V Equivalent circuit with leakage resistance is Tht arly, aT a (ix is independent of temperature) But given, expectation of change in reverse current is ae oan I, dT But, LL og7 TdT —t in Perp Lakso a|Chen Vieni [Ving | Thaplaga [Raa| ees : Engineering Publications Electronic Devices 0.071= 0.11 Io 31-21 i 54, Ans: (d) Sol: open circuit PN diode band diagram r pside Be TO Ey side Eg So n-side energy levels are lower in energy than corresponding p-side energy levels. The shift between edges of conduction bands of P & N sides in open circuited PN diode is equal to Ep (eV) but not Eq Depletion _ peide —“}¥e8lonl n-side ‘Open circuited tunnel diode 55. Sol: 56. 57. Sol: Reverse Biased tunnel diode Ans: (c) As tunnel diode is a two terminal device, Isolation between input and output is not possible, Ans: (b) When a PN diode is suddenly reverse biased at t= 0, the voltage across diode is given as time (1) Le te Reverse recovery time (t,) = (= storage period) (t,, ~ transition period So the diode voltage is negative only during transition interval. Ans: (a) When a PN junction diode is suddenly reverse biased from forward bias, the excess minority carriers that have been injected across the junction will still conduct current in reverse direction, to recover the diode to its reverse steady state these excess injected minority carriers have to be swept back. (CRED cote ther ens sow sl Chm Ti Tx oes ot ee