Lab 3: Diode Characteristics with Diode Applications

1. Objectives

1.1. To study the characteristics of a PN junction Silicon diode and

investigate the static (DC resistance, rDC) and dynamic resistance (ac resistance,
rac) of a diode.
1.2. To implement and investigate the various parameters and characteristics of a
half-wave rectifier with a specific load resistance and the effect of placing a load
capacitor on the load voltage and diode current.
1.3. To implement and investigate the characteristics of the diode logic gates.
1.4. To implement and investigate the characteristics of clamping circuit.

2. Equipment, Instruments and Materials

 NI ELVIS II+ board

 Computer workstation with LabVIEWTM and MultiSimTM softwares.
 Breadboard
 Digital Multi-Meter
 Diodes
 Resistors
 Capacitors

3. Simulations

3.1. Diode Characterization.

Figure 1 depicts how VD0 can be measured from the diode characteristic curve
operating the forward biased region. Figure 2 shows the slope of the line both
passing to the origin and intersecting to the diode characteristic curve at a specific
point known as the Q point or Quiescent point (operating point). Eq. (1) shows how
the DC or static resistance, rDC, can be measured from Figure2. Figure 3 shows a
line tangent to a point (ac operating point) in the curve whose slope is the reciprocal
of the ac resistance or dynamic resistance, rac. The value can be measured using Eq.
(2).
The expected value of the ac resistance can be calculated using Eq. (5) with the
assumptions that the temperature inside the laboratory room during the experiment
is 20 C and  = 1 with the 1N4001 being a Silicon diode.
 iD

vD
VD0

Figure 1. Diode characteristic curve showing VD0

iD

Quiescent pt.
(Operating pt.)

ID

ID
Slope = m =
VD
ID
VD

vD
VD
Figure 2. Diode characteristic curve showing the DC resistance or static
resistance, rDC
ID 1 1
m= = = ; V
V D V D r DC r DC = D (1)
ID
ID

iD

D ID
Slope = m =
DVD

ID2 ΔID
ac operating ΔVD
point
Line tangent to the curve
ID1 passing to point midway
between VD1 and VD2

vD
VD1 VD2
 Figure 3. Diode characteristic curve showing the ac resistance or dynamic
resistance, rac
∆ID 1 1
m= = = ∆ V D V D 2 −V D 1
∆ V D ∆V D r ac ; r ac = = (2)
∆ ID I D 2 −I D 1
∆ ID
qVD
(
I D =I S e kT −1 ) (3)
where: ID = diode current.
IS = reverse saturation current.
e = Euler’s constant (2.71828183, base of natural logarithm).
q = electron charge (1.60218 × 10-19 coulomb)
joule
k = Boltzmann’s constant (1.38064852 × 10-23  )
°K
 = ideality factor (1 for Germanium and 2 for Silicon diodes)
Hence, Eq (3) can further be simplified by substituting the constant values with
reasonable assumptions.
kT
Assuming V T = and substituting the constant values at assuming that the
q
diode is Silicon (n =2) operating at the room temperature (temperature inside the lab)
at 293 K (20C), we have,
joule
1.38064852× 10−23 ×2 ×293 ° K
knT °K
VT= = =50.5 mV
q 1.60218 ×10−19 coulomb

VD

I =I ( e ) (4)
VT
D S −1

Using (4),
VD

[(
δ I D δ I S e −1
=
VT
I
= S e
)] ( )= I (Ve )
VD
VT S
VD
VT

δVD δV D VT T
Normally VD >> VT, hence,
VD VD
( VT
) ( )
I D =I S e −1 ≅ I S e
VT

VD

I (e ) I VT
Thus, δID S D
= =
δVD VT VT

1 ∆ I D δ ID ID
= = = ;
r ac ∆ V D δ V D V T

V T 50.5 mV
r ac = = (5)
ID ID
 R 1kW

iR D
VS (1N4001) +
iD vD
0 to 10V
-
Figure 4. Characterizing the Diode in the Forward bias region

3.1.1. Simulate the diode circuit as shown in Figure 4 using DC sweep in Multisim and
plot the diode current (ID) vs. the diode voltage (VD).
3.1.2. Perform DC sweep on Vs and set the start and stop values of Vs from 0 to 10V
with an increment of 0.01V and obtain pairs of VD and ID for each value of VS.

3.1.3. Fill out Table A1 in Appendix A with the simulated values.

3.1.4. Plot ID vs. VD on the IV curve and set the ID(max) to 10mA and VD(max) to 1V.
Note: Students may also investigate on how to use the IV Analyzer instrument in
MultiSim to plot the characteristic curve (IV curve).
Calculation of DC and AC Resistance
3.1.5. From the Diode characteristics curve, find the static resistance, rDC,
rDC = VD / ID at different values VD and fill out values in simulated column in Table 1.

3.1.6. From the Diode characteristics curve, find the dynamic resistance, rAC,
ΔV D
rAC =rdynamic, at different values ΔVD and fill out values in simulated column in
Δ ID
Table 2.

Table 1. DC Resistance (rDC) at Various Values of VD

rDC = VD/ID % Difference
VD ID (mA) ID (mA)
Simulated Practical Simulated
(V) (Simulated) (Practical)
(ohm) (ohm) vs. Practical
0.5 0.497 0.49 1006.03 1020.4081 1.42
0.55 1.46 1.45 376.7123 379.3103 0.6849
0.6 3.90 3.85 153.8462 155.8442 1.28
0.65 10.9 10.8 59.6330 60.1852 0.9174
 Table 2. AC Resistance (rac) at Various Values of VD
ID1 ID2 ID1 ID2 rAC = VD/ID % Difference
VD1 VD2
(mA) (mA) (mA) (mA) Simulated Practical Simulated vs.
(V) (V)
sim Sim pract pract (ohm) (ohm) Practical
0.5 0.6 0.497 3.90 0.49 3.85 29.3858 29.7619 1.27
0.5 0.65 1.46 10.9 1.45 10.8 10.5932 10.6952 0.9629
5

3.2. Half-wave rectifier

1N4001

D +
VS RL
10V(p-p) 10kW VL
Sine wave
@50Hz
-
Figure 5. Half-wave rectifier without a load capacitor

3.2.1. Using Appendix B, familiarize yourself with the different components of the
output waveform of the rectifier circuit with and without capacitor filter or load
capacitor. Relate the table of equations given in Appendix B with the different
components of the output waveform.
3.2.2. Draw the circuit for half-wave rectifier type without the load capacitor in Multisim
as shown in Figure 5.

3.2.3. Observe the output waveform and record this in Table 3 using the oscilloscope
and measure the required parameters using the oscilloscope or DMM as required
in Table 3.

3.2.4. Record your measurements in Table 3.

 1N4001

D + +
VS RL
10V(p-p) C - 10kW VL
Sine wave
@50Hz
-
Figure 6. Half-wave rectifier with a load capacitor, C
3.2.5. Modify the half wave rectifier circuit by adding a load capacitor as shown in Figure
6 Observe the output waveforms for the following values of capacitor.
3.2.5.1. Case 1: Use C=1μF

3.2.5.2. Case 2: Use C=6.8 μF

3.2.6. Observe the output waveform on the scope and measure the required parameter
using the scope or DMM as required in Table 4.
3.2.7. Record your measurements in Table 4.
3.2.8. Fill out Table 5 and Table 6 with the calculated values by referring to the table of
equations in Appendix C.
3.2.9. Take a screenshot of the output waveforms and fill out Table 7.

Table 3. Measurements in Multisim Without a Capacitor

Measurements in Multisim
Vac( rms)
Using an Oscilloscope Using a Digital DC and AC Voltmeter ∗100 %
Vdc
 Vm (V) Vdc(V) Vac(rms) % Ripple
10 2.93 4.67 1.59

Table 4. Measurements in Multisim With a Filter Capacitor

Measurements in Multisim
Vac( rms)
C Using an Oscilloscope Using a Digital Voltmeter ∗100 %
Vdc
Vm (V) Vdc(V) Vac(rms) % Ripple
1 F 10 5.41 5.89 108.87
6.8 F 10 8.40 8.42 100.23
Table 5. Calculated Values Without a Capacitor
Vm (V) Vdc(V) Vac(rms) % Ripple

Table 6. Calculated Values With a Filter Capacitor

C Vm (V) Vr(p-p) Vdc(V) Vac(rms) % Ripple
1 F 9 9 6 6.32 105.33
6.8 F 9.66 1.421 9 9.06 100.67

Table 7. Half wave rectifier input and output waveforms (Simulated)

With 6.8uF load

Without load capacitor With 1uF load capacitor
capacitor

3.3. Diode logic gates

 µ1¶ D1

µ0¶ A

µ1¶ D2
+
µ0¶ B
V0
D3 R
1kW -

5V

Figure 7. Diode implementation of a 3-input AND gate.

3.3.1. Simulate the circuit in Multisim as shown in Figure 7 and write the results in a
tabular form (truth table) for all four cases by filling out Table 8.
Assume the following logic standard (TTL, transistor-transistor logic)

5V for logic ‘1’

GND for logic ‘0’
Use the Truth Table below for your reference.

where: A_V and B_V are voltage representation of logic inputs while V0 is the
voltage representation of the logic output.
A and B are logic inputs and Y is the logic output.

Table 8. Truth Tables of the diode logic circuit.

A_V B_V V0 (V)

0V 0V 5
0V 5V 0.61
5V 0V 0.61
5V 5V 0.5

A B Y
0 0 1
0 1 0
 1 0 0
1 1 0
4. Lab Work

Diodes are usually equipped with band identifying the cathode terminal (the other
terminal is, of course, the anode). If in doubt, you can always find out experimentally
using your multi-meter.

Procedure for testing the diode:

Diode Test Using DMM

With the DMM set as Ohmmeter (selector on diode test scale)
 Connect the diode to the DMM such that anode is connected to the positive and
cathode is connected to negative terminal. A small voltage should be observed
typically between 0.4V to 0.6V; this confirms that the diode is “forward biased “
 Connect the diode to the DMM such that anode is connected to the negative and
cathode is connected to positive terminal. An overload reading (OL) should be
observed; this confirms that the diode is “reverse biased “

Diode
Characterization

VS1 R 1kW AI0+

iR D
(1N4001) + GND AI0- NI
iD vD
AI1+
ELVIS
-

GND AI1-
D
VS2 AI2+
1N4001
AI2-
RL + GND
10kW VL :
1µF
+ +
6.8µF - :
Half-wave - - AO0
USB
Rectifier AO1 Interface
Computer
FGEN Workstation
µ1¶ D1 :
:
µ0¶ A SUPPLY+
GND
µ1¶ D2 +
SUPPLY-
µ0¶ B
V
- GND
R
1kW 5V

Diode AND Gate

Figure 8. Connection Diagram of the Experiment on the NI ELVIS Board.

NOTE:
V
symbol denotes that you need to connect a digital multi-meter (DMM) in order to
measure the output voltage.
4.2. Construct the diode circuit as shown in Figure 8 on the NI ELVIS Board.
4.3. To characterize the diode using a LabVIEW program, sweep the input (VS1) using
the analog output (AO0) and acquire the voltage across the diode (vD) using the AI0+
analog input of the NI ELVIS II+ board.
4.4. Set the start and stop values of Vs1 from 0 to 10V with an increment of 0.01V.
4.5. Plot the diode current (ID) vs. the diode voltage (VD) using the acquired data from
the LabVIEW Measurement output Excel file.
4.6. Fill out Table A2 in Appendix A with the measured values.
4.7. Plot the (ID) vs. (VD) IV curve using Excel.
Note: Students may also investigate on how to use the IV Analyzer instrument in

Calculation of DC and AC Resistance

4.8. From the Diode characteristics curve, find the static resistance, rDC,
rDC = VD / ID at different values VD and fill out the practical values in Table 1.

4.9. From the Diode characteristics curve, find the dynamic resistance, rAC,
ΔV D
rAC =rdynamic at different values ΔVD and fill out the practical values in Table 2.
Δ ID

Half-wave rectifier
4.10. Implement the circuit for half-wave rectifier type without the load capacitor in as
shown in Figure 8.
4.11. Observe the output waveform and record this in Table 10 using the oscilloscope in
the NI ELVIS II+ board and measure the required parameters using DMM as
required in Table 8.
Table 8. Practical Measurements in half-wave rectifier Without a Capacitor
Measurements in the Lab Work
Using an Using a Digital DC and AC Vac( rms)
∗100 %
Oscilloscope Voltmeter Vdc
Vm (V) Vdc(V) Vac(rms) % Ripple

4.12. Modify the half wave rectifier circuit by adding a load capacitor as shown in Figure
8. Observe the output waveforms for the following values of capacitor.
4.12.1. Case 1: Use C=1μF
4.12.2. Case 2: Use C=6.8 μF
4.13. Observe the output waveform on the scope and measure the required parameter
using the scope or DMM as required in Table 9.
4.14. Record your measurements in Table 9 and insert the screenshots in Table 10.
Table 9. Practical Measurements in Half wave rectifier With a Filter Capacitor
Measurements in the Lab Work
Vac( rms)
C Using an Oscilloscope Using a Digital Voltmeter ∗100 %
Vdc
Vm (V) Vdc(V) Vac(rms) % Ripple
1 F
6.8 F

Table 10. Half wave rectifier input and output waveforms (Practical)

Insert your figure here Insert your figure here Insert your figure here
(You may resize or place (You may resize or place (You may resize or place
your figure on a separate your figure on a separate your figure on a separate
page to make it clear) page to make it clear) page to make it clear)
With 6.8uF load
Without load capacitor With 1uF load capacitor
capacitor

Diode logic gates

4.15. Construct the Diode logic gate circuit as shown in Figure 8 and write the results in
a tabular form (truth table) for all four cases by filling out Table 11.
Assume the following logic standard (TTL, transistor-transistor logic)
5V for logic ‘1’
GND for logic ‘0’
Use the Truth Table below for your reference.
where: A_V and B_V are voltage representation of logic inputs while V0 is the
voltage representation of the logic output.
A and B are logic inputs and Y is the logic output.

Table 11. Truth Tables of the diode logic circuit (Practical values)
A_V B_V V0 (V)
0V 0V
0V 5V
5V 0V
5V 5V

A B Y
0 0
0 1
1 0
1 1
 5. Post Lab Tasks

5.1. Calculate the expected value of ac resistance at VD = 0.6V. Use Table A2 in

Appendix A to find the ID@ Vd=0.6V. Compare this value to your measured ac
resistance at

0.65−0.55
r ac =
I D@v −I D @ v
D =0.65V D=0.55 V

5.2. Simulate the circuit in Figure 6 but this time place a current probe to measure
the current through a diode and observe the output current and load voltage
waveforms on Case 1: C=1 μF and Case 2: Use C=6.8 μF.

See Figures 9 and 10 for your reference.

5.2.1. Calculate the peak diode current on Case 1 and Case 2.

5.2.2. Measure the peak diode current on the simulated circuit on Case 1
and Case 2.

5.2.3. Rationalize what happens to the diode current in reference with the
load current when a load capacitor is added to the circuit.

1N4001

D + +
VS RL
10V(p-p) C - 10kW VL
Sine wave
@50Hz
-
Figure 6. Half-wave rectifier with a load capacitor, C

Figure 9. Sample Simulation of the circuit in Figure 6 with current probe.

Figure 10. Sample load voltage waveform (BLUE) and current waveform (RED)
using a current probe with a sensitivity of 1mA/V.

5.3. Design a 3-input OR Gate.

5.3.1. Simulate and test your design by filling-out the Truth Table in Table 12
below.

5.3.2. Insert a screenshot of your simulated circuit.

Table 12. Truth table for Measuring V0 for the sequence of logic inputs.
A B C V0
(volt) (volt) (volt) (volt)
0 0 0 0
0 0 5 5
0 5 0 5
0 5 5 5
5 0 0 5
5 0 5 5
5 5 0 5
5 5 5 5

5.4. Design and simulate a clamping circuit that will clamp up the input signal to
5V as shown in the Figure11 below.

Note that the required input voltage is the BLUE waveform while the required output
voltage waveform is the RED waveform
 12
11
10
9
8
7
6
5
4
Voltage (volts)

3
2
1
0
-1
-2
-3
-4
-5
-6
-7
0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Vin (Input voltage) Time (sec.) V0(Output voltage)

Figure 11. Required Input and Output Waveforms of the Clamping Circuit.
Appendix A. Table of Simulated and Practical Values of the Diode
Voltages and Currents.
Table A1. Forward Bias Characteristics in MultiSim.
VD (V) ID (mA)
0.5 0.497
0.55 1.46
0.57 2.42
0.6 3.90
0.62 5.82
0.65 10.9

Table A2. Forward Bias Characteristics Acquired from the NI ELVIS Board.
VD (V) ID (mA)

: :
: :

Appendix B. Expected Waveforms.

Where:
Vm = peak rectified signal
Vdc = average voltage
fr = ripple frequency
= 1/Tr

Half Wave Rectified Waveform without a Capacitor Filter

Equations Related to the Calculated Values Without a Capacitor

Vm (V) Vdc(V) Vac(rms) %r
5 – VD0  0.318Vm  0.386Vm 121%

Where:
Vm = peak rectified signal
Vdc = average voltage
Vc(min) = minimum capacitor voltage
Vr(p-p) = peak to peak ripple voltage
Vac(rms) = rms equivalent of the ripple voltage
%r = % ripple

Half Wave Rectifier Output Waveform with Capacitor Filter

Approximate Equations Related to the Calculated Values With a Capacitor
 Vm (V) fr Vr(p-p) Vdc(V) Vac(rms) % Ripple factor
Vdc V r ( p− p) Vr ( p− p) Vac(rms)
5 – VD0 fi ≅ V m− ≅ ×100
f r C RL 2 2 √3 Vdc

Appendix C. Derivations.
1. Half wave rectifier

V m sin ⁡(ωt ) 0 ≤ ωt< π

V L≅ { 0 π ≤ωt <2 π }
2π

V L, RMS(Total)=
√1
∫ V 2 d (ωt )
2π 0 s
2π
1
V L, DC = ∫ V d (ωt)
2π 0 s
Fig. C1. Half wave rectified output
V L, ac ( RMS )= √V 2
−V 2 without capacitor.
S , RMS(Total) DC

Prove the following:

a) V L, DC , DC component of the rectified output

π 2π
V L, DC =
1
{
∫ V sin ( ωt ) d ( ωt ) +∫ 0 d ( ωt )
2π 0 m π
}
Vm π
V L, DC =
2π
{[−cos ⁡(ωt )]0 }
Vm
V L, DC = {[−co s ( π ) +cos ⁡(0)]}
2π
Vm
V L, DC = {[−(−1)+1]}
2π
Vm
V L, DC =
π

b) V RMS(Total), Total root mean square of the rectified output.

π 2π

V L, RMS(Total)=
1
2π √ {∫ [ 0

V m2 π 1−cos ⁡(2 ωt )
2
V m sin ( ωt ) ] d ( ωt ) +∫ 0 d ( ωt )
π
}
V L, RMS(Total)=
√
V m2
2π 0
∫ 2
π
[
d ( ωt )

π
]
V L, RMS(Total)=
4π √ { 1
∫ d ( ωt ) −∫ 2 cos ⁡( 2ωt )× 2 d ( ωt )
0 0
}
 π
Vm
V L, RMS(Total)=

V
2 √[ 1
π
1
1
ωt − sin ⁡(2 ωt)
2
1 1
] 0

V L, RMS(Total)= m
V
2 √[ π
1
π− sin ( 2 π )−0+ sin ( 2 ×0 )
2 2 ]
V L, RMS(Total)= m
2
Vm
√ π
[ π −0−0+0 ]

V L, RMS(Total)=
2

c) V L, ac(RMS), ac component of the rectified output.

2 2
V L, ac ( RMS)=
1
√[ 1
V − Vm
2 m
V L, ac ( RMS)=0.386V m
π ] [ ]

2. AC component of a capacitor-filtered output of a rectifier approximated by

the triangular wave shown in Fig. C2.

Fig. C2. An approximation of the AC component of the capacitor filtered output of a rectifier.
where:
( ωt )
{ [
V r = V rpk 1−
π ]
0 ≤ ωt ≤ 2 π }
2π

V r (RMS) =
√ 1
∫
2π 0
V 2r d ( ωt)

Proof that the rms content of the sawtooth waveform shown in Fig. B3 is,
V
V r (RMS) = rp− p
2 √3
2π 2

V r (RMS) =
√ 1
∫
2π 0
V rpk 1−
( ωt )
{ [ π
2π 2
]} d (ωt )

V r (RMS) =V rpk
√ 1
∫
2π 0
1−
2π
( ωt )
[π
d(ωt) ]
2
V r (RMS) =V rpk
√ 1
[
2 ( ωt ) ( ωt )
∫ 1− π + π 2 d (ωt)
2π 0 ]
 2π

V r (RMS) =V rpk
√ [ 1
2π
(ωt)−
2 ( ωt )2 ( ωt )3
2π
+
3 π2 ]
0

√ {[
2 3 2 3
V r (RMS) =V rpk
1
2π
(2 π )−
2 (2 π ) (2 π )
2π
+
3π 2
− ( 0 )−
( 0) ( 0)
][ +
2 π 3π2 ]}
V r (RMS) =V rpk
√ {[ 1
2π
(2 π )−
8 π2 8 π3
+
2 π 3 π2 ]}
V r (RMS) =V rpk
√ 1
2π {[ 8
2 π −4 π + π
3 ]}
V r (RMS) =V rpk

1
√
1 2
2π 3
π{[ ]}
V
V r (RMS) =V rpk ; V rpk = rp−p
√3 2
V rp− p
V r (RMS) =
2 √3