ECE-305: Spring 2015

MOSFET
Device Metrics
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
[email protected]

Lundstrom’s lecture notes: Lecture 2

Lundstrom ECE 305 S15

4/8/15

MOSFET IV: output characteristics

D ID
VD : 0 → VDD
VGS = VG1 > VT
ID

G VG1 ⎛ dI ⎞
ro = ⎜ D ⎟
⎝ dVDS ⎠ VGS1
S VGS = VG1 < VT
VDSAT VDS
n-channel
enhancement “linear region” “saturation region”
mode MOSFET 2
Lundstrom ECE 305 S15
 MOSFET IV: output characteristics
ID
Linear region: VD < VDSAT
Drain saturation voltage: VDSAT VGS = VG1 > VT
Saturation region: VD > VDSAT
⎛ dI ⎞
Above threshold: VGS > VT ro = ⎜ D ⎟
⎝ dVDS ⎠ VGS1
Below threshold: VGS < VT
VGS = VG1 < VT
Output resistance: rd
VDSAT VDS

“linear region” “saturation region”

3
Lundstrom ECE 305 S15

MOSFET IV: output characteristics

D ID VG = VDD
VD : 0 → VDD VG 3 > VG 2
ID VG 2 > VG1
G VGS
VG1

VG : 0 → VDD VG 0 < VG1

S

VDS
n-channel
enhancement “linear region” “saturation region”
mode MOSFET 4
Lundstrom ECE 305 S15
 MOSFET device metrics (i)
output resistance:
ro (Ω − µm )
↑
ID
on-current (mA/µm)
( mA µm )
I D (VGS = VDS = VDD )

VGS transconductance

ΔI D
gm ≡
ΔVGS VDS
VDS
VDD ( µS µm )
5
Lundstrom ECE 305 S15

applications of MOSFETs
symbol
switch amplifier

D I ON D

G G output
G
S input signal
signal S
S
id = gmυ gs

Lundstrom ECE 305 S15 6

 output vs. transfer characteristics

output characteristics transfer characteristics

ID D
ID VDS1

VG1 I
G

VDSAT VDS VT VGS

Fix gate voltage then Fix drain voltage then
sweep the drain voltage sweep the gate voltage
7

output vs. transfer characteristics

output characteristics transfer characteristics

ID D
VDS 2 > VDS1
low VDS high VDS
ID
I
G

S
VDS1

VDS VT VGS
VDSAT

“threshold voltage” 8
 MOSFET transfer characteristics

↑
ID
I ON
( mA µm )
VDS = VDD

off-current
VDS = 0.05 V

VGS
VTLIN VDD
VTSAT
threshold voltage 9

MOSFET device metrics (ii)

transfer characteristics:
↑ I ON
VDS = VDD
log10 I D
( mA µm )

off-current
subthreshold swing:
( mV decade )
VGS
VT
VDD

Lundstrom ECE 305 S15 10

 MOSFET device metrics (iii)
transfer characteristics:
↑ I ON
VDS = VDD
log10 I D
( mA µm ) VDS = 0.05 V

DIBL (drain-induced barrier lowering)

( mV V)

VGS
VT
VDD

Lundstrom ECE 305 S15 11

summary

Given the measured characteristics of a MOSFET, you

should be able to determine:
1.  on-current: ION
2.  off-current: IOFF
3.  subthreshold swing, SS
4.  drain induced barrier lowering: DIBL
5.  threshold voltage: VT (lin) and VT (sat)
6.  on resistance: RON
7.  drain saturation voltage: VDSAT
8.  output resistance: ro
9.  transconductance: gm

Our goal is to understand these device metrics.

Lundstrom ECE 305 S15 12
 Example: 32 nm N-MOS technology

Lundstrom ECE 305 S15

13

Question 1)

What is the off current?

a)  10-9 A/micron

b)  10-7 A/micron
c)  10-5 A/micron
d)  10-4 A/micron
e)  10-3 A/micron

Lundstrom ECE 305 S15 14

 Question 2)

What is the SS?

a)  50 mV/V
b)  105 mV/V
c)  210 mV/V
d)  330 mV/V
e)  408 mV/V

Lundstrom ECE 305 S15 15

Question 3)

What is the ON current?

a)  0.1 mA/micron

b)  0.5 mA/micron
c)  1.0 mA/micron
d)  1.5 mA/micron
e)  2.0 mA/micron

Lundstrom ECE 305 S15 16

 Question 4)

What is VT?

a)  0.05 V
b)  0.3 V
c)  0.5 V
d)  0.7V
e)  1.0 V

Lundstrom ECE 305 S15 17

n-channel vs. p-channel MOSFET

n-MOSFET p-MOSFET
ID ID

VS = 0 VG > VT VD > 0 VS = 0 VG < VT VD < 0

n-Si S “channel” D n-Si p-Si S “channel” D p-Si

L L
p-type silicon n-type silicon

side view side view

Lundstrom ECE 305 S15 18

 Example: 32 nm P-MOS technology

Lundstrom ECE 305 S15

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