High Efficiency Fast Recovery Rectifier Diodes: Description
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zigobasHigh Efficiency Fast Recovery Rectifier Diodes: Description
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zigobasBYW 98-50 →200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
HIGH SURGE CURRENT
THE SPECIFICATIONS AND CURVES ENABLE
THE DETERMINATION OF trr AND IRM AT 100°C
UNDER USERS CONDITIONS
DO 27 A
DESCRIPTION (Plastic)
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
IFRM Repetive Peak Forward Current tp ≤ 20µs 70 A
IF (AV) Average Forward Current* Ta = 85°C 3 A
δ = 0.5
IFSM Surge non Repetitive Forward Current tp = 10ms 70 A
Sinusoidal
Ptot Power Dissipation * Ta = 85°C 2.5 W
Tstg Storage and Junction Temperature Range - 40 to + 150 °C
Tj - 40 to + 150
TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 °C
from Case
BYW 98-
Symbol Parameter Unit
50 100 150 200
VRRM Repetitive Peak Reverse Voltage 50 100 150 200 V
VRSM Non Repetitive Peak Reverse Voltage 55 110 165 220 V
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j - a) Junction-ambient* 25 °C/W
* On infinite heatsink with 10mm lead length.
November 1994 1/5
BYW 98-50 → 200
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
IR Tj = 25°C VR = VRRM 10 µA
Tj = 100°C 0.5 mA
VF Tj = 25°C IF = 9A 1.1 V
Tj = 100°C IF = 3A 0.85
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj = 25°C IF = 1A diF/dt = - 50A/µs 35 ns
VR = 30V See figure 10
Qrr Tj = 25°C IF = 2A diF/dt = - 20A/µs 12 nC
VR ≤ 30V
tfr Tj = 25°C IF = 1A tr = 10ns 20 ns
Measured at 1.1 x VF
VFP Tj = 25°C IF = 1A tr = 10ns 5 V
To evaluate the conduction losses use the following equations:
VF = 0.66 + 0.03 IF
P = 0.06 x IF(AV) + 0.03 IF2(RMS)
2/5
BYW 98-50 → 200
Fi g ure 1 . Ma xi m u m av er ag e powe r Figure 2. Average forward current versus
dissipation versus average forward current. ambient temperature.
Figure 3. Thermal resistance versus lead
length. Mounting n°1 Mounting n°2
INFINITE HEATSINK PRINTED CIRCUIT
Figure 5. Peak forward current
versus peak forward voltage drop
(maximum values).
Figure 4. Transient thermal impedance
junction-ambient for mounting n°2 versus
pulse duration (L = 10 mm).
3/5
BYW 98-50 → 200
Figure 6. Capacitance versus reverse voltage Figure 7. Recovery time versus diF/dt.
applied.
Figure 8. Peak reverse current versus diF/dt. Figure 9. Dyn amic pa rameters versus
junction temperature.
Figure 10. Measurement of trr (Fig. 7) and I RM
(Fig. 8).
4/5
BYW 98-50 → 200
PACKAGE MECHANICAL DATA
DO 27A (Plastic)
B A B /C
O
note 1 E E note 1
/D
O /D
O
note 2
DIMENSIONS
REF. Millimeters Inches NOTES
Min. Max. Min. Max.
A 9.80 0.385 1 - The lead diameter ∅ D is not controlled over zone E
B 26 1.024
2 - The minimum axial lengh within which the device may be
∅C 5.10 0.200 placed with its leads bent at right angles is 0.59”(15 mm)
∅D 1.28 0.050
E 1.25 0.049
Cooling method: by convection (method A)
Marking: type number; white band indicates cathode
Weight: 1g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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