Scribd
Upload
62 views

2SA1104 Silicon Epitaxial Planar Transistor: General Description

This document provides specifications for a silicon PNP high frequency, high power transistor intended for audio and general purpose applications. Key specifications include a maximum collector-emitter voltage of 120V, collector current of 8A, total power dissipation of 80W, and saturation voltage below 2V at 3.5A collector current. The transistor has a DC current gain ranging from 50 to 250 and a transition frequency of at least 20MHz.

Uploaded by

Daniel Rocha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
62 views

2SA1104 Silicon Epitaxial Planar Transistor: General Description

This document provides specifications for a silicon PNP high frequency, high power transistor intended for audio and general purpose applications. Key specifications include a maximum collector-emitter voltage of 120V, collector current of 8A, total power dissipation of 80W, and saturation voltage below 2V at 3.5A collector current. The transistor has a DC current gain ranging from 50 to 250 and a transition frequency of at least 20MHz.

Uploaded by

Daniel Rocha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

2SA1104 Silicon Epitaxial Planar Transistor

GENERAL DESCRIPTION
Silicon PNP high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose

MT-100
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 120 V
VCEO Collector-emitter voltage (open base) - 120 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 80 W
VCEsat Collector-emitter saturation voltage IC = 3.5A; IB = 0.35A - 2 V
VF Diode forward voltage IF = 3.5A 1.5 2.0 V
tf Fall time - s

LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 120 V
VCEO Collector-emitter voltage (open base) - 120 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 8 A
IB Base current (DC) - 2 A
Ptot Total power dissipation Tmb 25 - 80 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150

ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO Collector-base cut-off current VCB=100V - 0.2 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 120 V
VCEsat Collector-emitter saturation voltages IC = 3.5A; IB = 0.35A - 2 V
hFE DC current gain IC = 3A; VCE = 5V 50 250
fT Transition frequency at f = 5MHz IC = 1A; VCE = 12V 20 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 300 - pF
ton On times us
ts Tum-off storage time us
tf Fall time us

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

You might also like