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Product Profile: Power LDMOS Transistor

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64 views14 pages

Product Profile: Power LDMOS Transistor

Uploaded by

Luis Carlos
Copyright
© © All Rights Reserved
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BLF578

Power LDMOS transistor


Rev. 4 — 1 December 2016 Product data sheet

1. Product profile

1.1 General description


A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.

Table 1. Application information


Mode of operation f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 108 50 1000 26 75
pulsed RF 225 50 1200 24 71

1.2 Features and benefits


 Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with  of 20 %:
 Output power = 1200 W
 Power gain = 24 dB
 Efficiency = 71 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications
BLF578
Power LDMOS transistor

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
1 2 1
2 drain2
5
3 gate1
3
4 gate2 3 4 5
4
5 source [1]

2
sym117

[1] Connected to flange.

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF578 - flanged balanced LDMOST ceramic package; SOT539A
2 mounting holes; 4 leads

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 0.5 +11 V
ID drain current - 88 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 225 C

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 2 of 14


BLF578
Power LDMOS transistor

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 150 C [1][2] 0.14 K/W
Zth(j-c) transient thermal impedance from junction to case Tj = 150 C; tp = 100 s;  = 20 % [3] 0.04 K/W

[1] Tj is the junction temperature.


[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.

001aak924
0.18

Zth(j-c)
(K/W) (7)

0.12

(6)

0.06

(5) (3)
(4) (2)
(1)

0
10−7 10−6 10−5 10−4 10−3 10−2 10−1 1 10
tp (s)

(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as function of pulse duration

6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown VGS = 0 V; ID = 2.5 mA 110 - - V
voltage
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 500 mA 1.25 1.7 2.25 V
VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.8 1.3 1.8 V
IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 3 of 14


BLF578
Power LDMOS transistor

Table 6. DC characteristics …continued


Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IDSX drain cut-off current VGS = VGS(th) + 3.75 V; 58 70 - A
VDS = 10 V
IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA
RDS(on) drain-source on-state VGS = VGS(th) + 3.75 V; - 0.07 - 
resistance ID = 16.66 A
Crs feedback capacitance VGS = 0 V; VDS = 50 V; - 3 - pF
f = 1 MHz
Ciss input capacitance VGS = 0 V; VDS = 50 V; - 403 - pF
f = 1 MHz
Coss output capacitance VGS = 0 V; VDS = 50 V; - 138 - pF
f = 1 MHz

Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 100 s;  = 20 %; f = 225 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 1200 W 23 24 25.4 dB
RLin input return loss PL = 1200 W 14 17.5 - dB
D drain efficiency PL = 1200 W 68 71 - %

001aaj113
900
Coss
(pF)
750

600

450

300

150

0
0 10 20 30 40 50
VDS (V)

VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section

6.1 Ruggedness in class-AB operation


The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W
pulsed; f = 225 MHz.

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 4 of 14


BLF578
Power LDMOS transistor

7. Application information

7.1 Reliability

001aaj114
105

Years
(1) (2) (3) (4) (5) (6)
104

103

102

(7) (8) (9) (10) (11)


10

1
0 4 8 12 16 20
Idc (A)

TTF (0.1 % failure fraction).


The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1/ .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 3. BLF578 electromigration (ID, total device)

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 5 of 14


BLF578
Power LDMOS transistor

8. Test information

8.1 Impedance information


Table 8. Typical impedance
Simulated ZS and ZL test circuit impedances.
f ZS ZL
MHz  
225 3.2 + j2.6 3.7  j0.2

drain

ZL
gate

ZS

001aaf059

Fig 4. Definition of transistor impedance

8.2 RF performance
The following figures are measured in a class-AB production test circuit.

8.2.1 1-Tone CW pulsed

001aak926 001aak927
26 80 65
PL
Gp ηD (dBm)
(dB) (%) 64
Gp
ideal PL
24 60
63
(2)
ηD
62
(1)
22 40
61 PL

60
20 20

59

18 0 58
100 400 700 1000 1300 1600 34 36 38 40
PL (W) Ps (dBm)

VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s;
 = 20 %.  = 20 %.
(1) PL(1dB) = 61.0 dBm (1260 W)
(2) PL(3dB) = 61.4 dBm (1400 W)
Fig 5. Power gain and drain efficiency as function of Fig 6. Load Power as function of source power;
load power; typical values typical values

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 6 of 14


BLF578
Power LDMOS transistor

001aak928 001aak929
26 80

Gp ηD
(dB) (%)

24 60 (1)
(4) (2)
(3) (3)
(2) (4)
(1)
22 40

20 20

18 0
100 400 700 1000 1300 1600 100 400 700 1000 1300 1600
PL (W) PL (W)

VDS = 50 V; f = 225 MHz; tp = 100 s;  = 20 %. VDS = 50 V; f = 225 MHz; tp = 100 s;  = 20 %.
(1) IDq = 0 mA (1) IDq = 0 mA
(2) IDq = 40 mA (2) IDq = 40 mA
(3) IDq = 80 mA (3) IDq = 80 mA
(4) IDq = 160 mA (4) IDq = 160 mA
Fig 7. Power gain as a function of load power; Fig 8. Drain efficiency as a function of load power;
typical values typical values

001aak931 001aak933
26 80
(1) (2) (3) (4) (5)
Gp ηD
(dB) (%)

24 60

22 40

(4)
(5)
(3)
(2)
20 20
(1)

18 0
100 400 700 1000 1300 1600 100 400 700 1000 1300 1600
PL (W) PL (W)

IDq = 40 mA; f = 225 MHz; tp = 100 s;  = 20 %. IDq = 40 mA; f = 225 MHz; tp = 100 s;  = 20 %.
(1) VDS = 30 V (1) VDS = 30 V
(2) VDS = 35 V (2) VDS = 35 V
(3) VDS = 40 V (3) VDS = 40 V
(4) VDS = 45 V (4) VDS = 45 V
(5) VDS = 50 V (5) VDS = 50 V
Fig 9. Power gain as a function of load power; Fig 10. Drain efficiency as a function of load power;
typical values typical values

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 7 of 14


BLF578
Power LDMOS transistor

8.3 Test circuit

VGG VDD
C1 C25

C11
C2 C28

R3
R1 R5 L1
T2
C13
input C7 C21
output
50 Ω C9 L4 L6 L8 L10 C17 C19 50 Ω
C5 L3 L12 C24

C14
C10 L5 L7 L9 L11 C16 C18 C20
C8 C22
C6 C23
C15
T1 R6 L2
R2 R4

C3 C27
C12

C4 C26
VGG VDD
001aaj123

See Table 9 for a list of components.


Fig 11. Class-AB common-source production test circuit

C25
C11
C1 T2
C2 C28
R1 L1
C7 R3 C21 R5
C13
C14 C17 C19
C9
C5 C6 C23 C24
C10
C16 C18 C20
C8 C15
R4 C22 R6
R2 L2
C3 C27
C4
T1
C12
C26

001aaj124

See Table 9 for a list of components.


Fig 12. Component layout for class-AB production test circuit

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Product data sheet Rev. 4 — 1 December 2016 8 of 14


BLF578
Power LDMOS transistor

Table 9. List of components


For production test circuit, see Figure 11 and Figure 12.
Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
Component Description Value Remarks
C1, C2, C11, C12 multilayer ceramic chip capacitor 4.7 F TDK4532X7R1E475Mt020U
C2, C3, C27, C28 multilayer ceramic chip capacitor 100 nF Murata X7R 250 V
C5, C7, C8, C21, C22 multilayer ceramic chip capacitor 1 nF [1]

C6 multilayer ceramic chip capacitor 30 pF [1]

C9, C10, C13, C15 multilayer ceramic chip capacitor 62 pF [1]

C14 multilayer ceramic chip capacitor 36 pF [1]

C16, C17 multilayer ceramic chip capacitor 24 pF [1]

C18 multilayer ceramic chip capacitor 30 pF [1]

C19 multilayer ceramic chip capacitor 27 pF [1]

C20 multilayer ceramic chip capacitor 9.1 pF [1]

C23 multilayer ceramic chip capacitor 13 pF [1]

C24 multilayer ceramic chip capacitor 16 pF [1]

C25, C26 electrolytic capacitor 220 F; 63 V


L1, L2 3 turns 1 mm copper wire D = 2 mm; length = 3 mm
L3, L12 stripline - (L  W) 15 mm  2.4 mm
L4, L5, L10, L11 stripline - (L  W) 47 mm  10 mm
L6, L7, L8, L9 stripline - (L  W) 8 mm  15 mm
R1, R2 metal film resistor 2 ; 0.6 W
R3, R4 metal film resistor 20 ; 0.6 W
R5, R6 metal film resistor 1 ; 0.6 W
T1, T2 semi rigid coax 50 ; 58 mm EZ-141-AL-TP-M17

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 9 of 14


BLF578
Power LDMOS transistor

9. Package outline

Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

A
F

D1

U1 B

q C

H1 w2 M C M
c

1 2

H U2 p E1 E

5 w1 M A M B M
L
A
3 4

b w3 M Q
e

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 e E E1 F H H1 L p Q q U1 U2 w1 w2 w3

4.7 11.81 0.18 31.55 31.52 9.50 9.53 1.75 17.12 25.53 3.48 3.30 2.26 41.28 10.29
mm 13.72 35.56 0.25 0.51 0.25
4.2 11.56 0.10 30.94 30.96 9.30 9.27 1.50 16.10 25.27 2.97 3.05 2.01 41.02 10.03
0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405
inches 0.540 1.400 0.010 0.020 0.010
0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT539A 10-02-02
12-05-02

Fig 13. Package outline SOT539A

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 10 of 14


BLF578
Power LDMOS transistor

10. Handling information

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

Table 10. ESD sensitivity


ESD model Class
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [1]

[1] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.

11. Abbreviations
Table 11. Abbreviations
Acronym Description
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VSWR Voltage Standing-Wave Ratio

12. Revision history


Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF578 v.4 20161201 Product data sheet - BLF578_3
Modifications: • Section 10 on page 11: updated Handling information
BLF578_3 20150901 Product data sheet - BLF578_2
BLF578_2 20100204 Product data sheet - BLF578_1
BLF578_1 20081211 Objective data sheet - -

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 11 of 14


BLF578
Power LDMOS transistor

13. Legal information

13.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.

13.2 Definitions Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
Draft — The document is a draft version only. The content is still under
such equipment or applications and therefore such inclusion and/or use is at
internal review and subject to formal approval, which may result in
the customer’s own risk.
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein Applications — Applications that are described herein for any of these
and shall have no liability for the consequences of use of such information. products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
Short data sheet — A short data sheet is an extract from a full data sheet
further testing or modification.
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and Customers are responsible for the design and operation of their applications
full information. For detailed and full information see the relevant full data and products using Ampleon products, and Ampleon accepts no liability for
sheet, which is available on request via the local Ampleon sales office. In any assistance with applications or customer product design. It is customer’s
case of any inconsistency or conflict with the short data sheet, the full data sole responsibility to determine whether the Ampleon product is suitable and
sheet shall prevail. fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
Product specification — The information and data provided in a Product should provide appropriate design and operating safeguards to minimize the
data sheet shall define the specification of the product as agreed between risks associated with their applications and products.
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid Ampleon does not accept any liability related to any default, damage, costs or
in which the Ampleon product is deemed to offer functions and qualities problem which is based on any weakness or default in the customer’s
beyond those described in the Product data sheet. applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
13.3 Disclaimers avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any Limiting values — Stress above one or more limiting values (as defined in
representations or warranties, expressed or implied, as to the accuracy or the Absolute Maximum Ratings System of IEC 60134) will cause permanent
completeness of such information and shall have no liability for the damage to the device. Limiting values are stress ratings only and (proper)
consequences of use of such information. Ampleon takes no responsibility for operation of the device at these or any other conditions above those given in
the content in this document if provided by an information source outside of the Recommended operating conditions section (if present) or the
Ampleon. Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
In no event shall Ampleon be liable for any indirect, incidental, punitive,
the quality and reliability of the device.
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or Terms and conditions of commercial sale — Ampleon products are sold
replacement of any products or rework charges) whether or not such subject to the general terms and conditions of commercial sale, as published
damages are based on tort (including negligence), warranty, breach of at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
contract or any other legal theory. individual agreement. In case an individual agreement is concluded only the
Notwithstanding any damages that customer might incur for any reason terms and conditions of the respective agreement shall apply. Ampleon
whatsoever, Ampleon’s aggregate and cumulative liability towards customer hereby expressly objects to applying the customer’s general terms and
for the products described herein shall be limited in accordance with the conditions with regard to the purchase of Ampleon products by customer.
Terms and conditions of commercial sale of Ampleon. No offer to sell or license — Nothing in this document may be interpreted or
Right to make changes — Ampleon reserves the right to make changes to construed as an offer to sell products that is open for acceptance or the grant,
information published in this document, including without limitation conveyance or implication of any license under any copyrights, patents or
specifications and product descriptions, at any time and without notice. This other industrial or intellectual property rights.
document supersedes and replaces all information supplied prior to the Export control — This document as well as the item(s) described herein
publication hereof. may be subject to export control regulations. Export might require a prior
Suitability for use — Ampleon products are not designed, authorized or authorization from competent authorities.
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 12 of 14


BLF578
Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly Translations — A non-English (translated) version of a document is for
states that this specific Ampleon product is automotive qualified, the product reference only. The English version shall prevail in case of any discrepancy
is not suitable for automotive use. It is neither qualified nor tested in between the translated and English versions.
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications. 13.4 Trademarks
In the event that customer uses the product for design-in and use in
Notice: All referenced brands, product names, service names and trademarks
automotive applications to automotive specifications and standards, customer
are the property of their respective owners.
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer Any reference or use of any ‘NXP’ trademark in this document or in or on the
uses the product for automotive applications beyond Ampleon’s specifications surface of Ampleon products does not result in any claim, liability or
such use shall be solely at customer’s own risk, and (c) customer fully entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
indemnifies Ampleon for any liability, damages or failed product claims the NXP group of companies and any reference to or use of the ‘NXP’
resulting from customer design and use of the product for automotive trademarks will be replaced by reference to or use of Ampleon’s own
applications beyond Ampleon’s standard warranty and Ampleon’s product trademarks.
specifications.

14. Contact information


For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales

BLF578 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet Rev. 4 — 1 December 2016 13 of 14


BLF578
Power LDMOS transistor

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Impedance information . . . . . . . . . . . . . . . . . . . 6
8.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
8.2.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6
8.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Handling information. . . . . . . . . . . . . . . . . . . . 11
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© Ampleon Netherlands B.V. 2016. All rights reserved.


For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 December 2016
Document identifier: BLF578

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