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POKHARA UNIVERSITY
Level: Bachelor Semester – Fall Year : 2009
Programme: BE Full Marks : 100 Course: Basic Electronics Engineering Time : 3hrs. Candidates are required to give their answers in their own words as far as practicable. The figures in the margin indicate full marks. Attempt all the questions.
1. a. What do you mean by Intrinsic and Extrinsic Semicondutors? 8
Draw I-V characteristic curve for PN junction diode and for forward biased, reverse biased and breakdown conditions. What is barrier potential? b. With the help of simple circuit diagram, explain transistor as an amplifier. 7
2. a. Draw input and output characteristic curves for CB transistor 8
configuration. Indicate cut off, active and saturation region. b. Find IB, IC and VCB for the given transistor circuit. 7
3. a. What do you mean by an ideal Op-amp? Deduce the expression for 7
the output voltage in non-inverting mode of op-amp. b. For the given Zener diode, fine Vout, IZ, IL and IS. 8 4. a. Define Sinusoidal oscillator? Differentiate damped and un-damped 7 oscillation. What conditions must be fulfilled in order to make oscillations un-damped. b. Convert the following: 8 i (011010.10011)2=(?)10 ii (A1F.8E)16 = (?)10 iii (234.4)in base-4 to base 5 system 5. a. State De-Morgan's theorem and verify it with the help of suitable 7 truth table. b. Define radio communication and modulation. Sketch the 8 modulation patterns of amplitude and frequency modulated signals when modulating signal is triangular in nature. 6. a. What is multi-meter and briefly explain its applications. 7 b. In the circuit shown in figure below, it is desired to measure the 8 voltage across 20k-ohm resistance. If a multi meter of sensitivity 40k-ohm per volt and range of 0-2v is used for the purpose, what will be the reading?
7. Write short notes on (Any Two) 5×2
a. Modern Trends in Electronics b. FET c. Ripple factor and efficiency for half wave rectifier