STPS80170C: 170 V Power Schottky Rectifier
STPS80170C: 170 V Power Schottky Rectifier
Datasheet
A1
Features
K
A2 • High junction temperature capability
• Low leakage current
• Good trade off between leakage current and forward voltage drop
• Low thermal resistance
• High frequency operation
TO-247
A2 • Avalanche capability
K
A1
• ECOPACK®2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• Telecom power
Description
This dual diode common cathode Schottky rectifier is suited for high frequency
switched mode power supplies.
Packaged in TO-247, the STPS80170C is optimized for use to enhance the reliability
of the application.
Product status
STPS80170C
Product summary
IF(AV) 2 x 40 A
VRRM 170 V
Tj(max.) 175 °C
VF(typ.) 0.68 V
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Tj = 25 °C - 80 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 20 80 mA
Tj = 25 °C - 0.84
IF = 40 A
Tj = 125 °C - 0.68 0.74
VF (2) Forward voltage drop V
Tj = 25 °C - 0.96
IF = 80 A
Tj = 125 °C - 0.80 0.86
To evaluate the conduction losses, use the following equation: P = 0.62 x IF(AV) + 0.003 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)
PF(AV)(W) IF(AV)(A)
40 45
δ = 0.1 δ = 0.2 δ = 0.5 δ=1 Rth(j-a) = Rth(j-c)
35 40
δ = 0.05
35
30
30
25
25
20
20
15 Rth(j-a) = 15 °C/W
15
10 T
10 T
5 5
IF(AV)(A) δ=tp/T tp T amb (°C)
δ=tp/T tp
0 0
0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175
0.01 0.3
0.2
0.1 Single pulse
t P(s)
t p(µs)
0.0
0.001
1 10 100 1000 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)
IR(µA) C(pF)
1.E+06 10000
F = 1 MHz
VOSC = 30 mVRMS
1.E+05 Tj = 25 ° C
Tj = 150 °C
1.E+04 Tj = 125 °C
Tj = 100 °C
1.E+03
Tj = 75 °C
1000
1.E+02
Tj = 50 °C
1.E+01
Tj = 25 °C
1.E+00
VR(V) VR(V)
1.E-01 100
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1 10 100 1000
Figure 7. Forward voltage drop versus forward current Figure 8. Forward voltage drop versus forward current
(per diode, low level) (per diode, high level)
IF (A) IF (A)
40 100.0
35
Tj = 125 °C
(Maximum values)
30 Tj = 125 °C
Tj=125°C
(Maximum values)
10.0
25 Tj = 125 °C
(Typical values)
20 Tj = 25 °C
Tj=125°C
T j = 125 °C Tj = 25 °C (Maximum values)
(Typical values) (Maximum values)
15
1.0
10
5
VF (V) VF(V)
0 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
A Heat-sink plane
E
∅P
S ∅R
L2
L1
L b1
b2
1 2 3 3 2 1
b c
A1 Back view
e
Dimensions
3 Ordering information
Revision history