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STPS80170C: 170 V Power Schottky Rectifier

This document provides data on a 170 V power Schottky rectifier. It details the device's features, applications, descriptions, product status, characteristics including absolute ratings, thermal resistance parameters, static electrical characteristics and curves showing average forward power dissipation and average forward current.

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0% found this document useful (0 votes)
71 views

STPS80170C: 170 V Power Schottky Rectifier

This document provides data on a 170 V power Schottky rectifier. It details the device's features, applications, descriptions, product status, characteristics including absolute ratings, thermal resistance parameters, static electrical characteristics and curves showing average forward power dissipation and average forward current.

Uploaded by

n tanevar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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STPS80170C

Datasheet

170 V power Schottky rectifier

A1
Features
K
A2 • High junction temperature capability
• Low leakage current
• Good trade off between leakage current and forward voltage drop
• Low thermal resistance
• High frequency operation
TO-247
A2 • Avalanche capability
K
A1
• ECOPACK®2 compliant

Applications
• Switching diode
• SMPS
• DC/DC converter
• Telecom power

Description
This dual diode common cathode Schottky rectifier is suited for high frequency
switched mode power supplies.
Packaged in TO-247, the STPS80170C is optimized for use to enhance the reliability
of the application.
Product status

STPS80170C
Product summary

IF(AV) 2 x 40 A

VRRM 170 V

Tj(max.) 175 °C

VF(typ.) 0.68 V

DS4415 - Rev 3 - August 2018 www.st.com


For further information contact your local STMicroelectronics sales office.
STPS80170C
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 170 V

IF(RMS) Forward rms current 80 A

Tc = 150 °C Per diode 40


IF(AV) Average forward current, δ = 0.5, square wave A
Tc = 140 °C Per device 80

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A

PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 2750 W

Tstg Storage temperature range -65 to +175 °C

Tj Maximum operating junction temperature (1) +175 °C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol Parameter Max. value Unit

Per diode 0.7


Rth(j-c) Junction to case °C/W
Total 0.5
Rth(c) Coupling 0.3 °C/W

When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

For more information, please refer to the following application note :


• AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C - 80 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 20 80 mA

Tj = 25 °C - 0.84
IF = 40 A
Tj = 125 °C - 0.68 0.74
VF (2) Forward voltage drop V
Tj = 25 °C - 0.96
IF = 80 A
Tj = 125 °C - 0.80 0.86

1. Pulse test: tp = 5 ms, δ < 2%


2. Pulse test: tp =380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.62 x IF(AV) + 0.003 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode

DS4415 - Rev 3 page 2/9


STPS80170C
Characteristics (curves)

1.1 Characteristics (curves)

Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)

PF(AV)(W) IF(AV)(A)
40 45
δ = 0.1 δ = 0.2 δ = 0.5 δ=1 Rth(j-a) = Rth(j-c)
35 40
δ = 0.05
35
30
30
25
25
20
20
15 Rth(j-a) = 15 °C/W
15
10 T
10 T

5 5
IF(AV)(A) δ=tp/T tp T amb (°C)
δ=tp/T tp
0 0
0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175

Figure 4. Relative variation of thermal impedance junction


Figure 3. Normalized avalanche power derating versus to case versus pulse duration
pulse duration (Tj= 125 °C)
PARM (t p ) Zth(j-c) /Rth(j-c)
1.0
PARM (10 µs)
1
0.9
0.8
0.7
0.1 0.6
0.5
0.4

0.01 0.3
0.2
0.1 Single pulse
t P(s)
t p(µs)
0.0
0.001
1 10 100 1000 1.E-03 1.E-02 1.E-01 1.E+00

DS4415 - Rev 3 page 3/9


STPS80170C
Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)

IR(µA) C(pF)
1.E+06 10000
F = 1 MHz
VOSC = 30 mVRMS
1.E+05 Tj = 25 ° C
Tj = 150 °C

1.E+04 Tj = 125 °C

Tj = 100 °C
1.E+03
Tj = 75 °C
1000
1.E+02
Tj = 50 °C

1.E+01
Tj = 25 °C

1.E+00
VR(V) VR(V)
1.E-01 100
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1 10 100 1000

Figure 7. Forward voltage drop versus forward current Figure 8. Forward voltage drop versus forward current
(per diode, low level) (per diode, high level)

IF (A) IF (A)
40 100.0

35
Tj = 125 °C
(Maximum values)
30 Tj = 125 °C
Tj=125°C
(Maximum values)
10.0
25 Tj = 125 °C
(Typical values)

20 Tj = 25 °C
Tj=125°C
T j = 125 °C Tj = 25 °C (Maximum values)
(Typical values) (Maximum values)

15
1.0
10

5
VF (V) VF(V)
0 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

DS4415 - Rev 3 page 4/9


STPS80170C
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

2.1 TO-247 package_information


• Epoxy meets UL94, V0
• Cooling method: by conduction (C)
• Recommended torque value: 0.8 N·m
• Maximum torque value: 1.0 N·m

Figure 9. TO-247 package outline

A Heat-sink plane
E
∅P

S ∅R

L2

L1

L b1

b2
1 2 3 3 2 1
b c
A1 Back view
e

DS4415 - Rev 3 page 5/9


STPS80170C
TO-247 package information

Table 4. TO-247 package mechanical data

Dimensions

Ref. Millimeters Inches (for reference only)

Min. Typ. Max. Min. Typ. Max.

A 4.85 5.15 0.191 0.203


A1 2.20 2.60 0.086 0.102
b 1.00 1.40 0.039 0.055
b1 2.00 2.40 0.078 0.094
b2 3.00 3.40 0.118 0.133
c 0.40 0.80 0.015 0.031
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.30 5.45 5.60 0.209 0.215 0.220
L 14.20 14.80 0.559 0.582
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
ØP 3.55 3.65 0.139 0.143
ØR 4.50 5.50 0.177 0.217
S 5.30 5.50 5.70 0.209 0.216 0.224

DS4415 - Rev 3 page 6/9


STPS80170C
Ordering information

3 Ordering information

Table 5. Order code

Order code Marking Package Weight Base qty. Delivery mode

STPS80170CW STPS80170CW TO-247 4.36 g 30 Tube

DS4415 - Rev 3 page 7/9


STPS80170C

Revision history

Table 6. Document revision history

Date Revision Changes

16-Sep-2005 1 First issue.


18-Jan-2018 2 Minor text change to improve readability. Updated Section 2.1: "TO-247 package information".
Updated Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
09-Aug-2018 3
and Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C).

DS4415 - Rev 3 page 8/9


STPS80170C

IMPORTANT NOTICE – PLEASE READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS4415 - Rev 3 page 9/9

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