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ECE220a - Topic 2

This document discusses semiconductor fundamentals and semiconductor diodes. It begins by defining semiconductors as materials with electrical conductivity between conductors and insulators. Semiconductors like silicon and germanium are used to make diodes and other solid state devices. A diode consists of a p-n junction where a p-type and n-type semiconductor meet. With no applied voltage, there is no current flow across the junction. In reverse bias, a small leakage current flows. In forward bias above the barrier potential, current flows easily through the junction.

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John Rivas
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8 views

ECE220a - Topic 2

This document discusses semiconductor fundamentals and semiconductor diodes. It begins by defining semiconductors as materials with electrical conductivity between conductors and insulators. Semiconductors like silicon and germanium are used to make diodes and other solid state devices. A diode consists of a p-n junction where a p-type and n-type semiconductor meet. With no applied voltage, there is no current flow across the junction. In reverse bias, a small leakage current flows. In forward bias above the barrier potential, current flows easily through the junction.

Uploaded by

John Rivas
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronics Circuits: Devices and Analysis ECE220a

Semiconductor Fundamentals

I. Introduction to Semiconductor
Diodes, transistors, integrated circuits, and other so-called "solid state"
devices are made from crystals of a semiconductor material, usually Silicon or
Germanium. At room temperature, the crystals of pure silicon and germanium are
neither good insulators nor good conductors. This is why they are called
semiconductors.

Semiconductor
- materials whose electrical conductivity lies between conductor and an
insulator
- have a medium energy gap that results in small amount of current flow
- have 4 electrons in its outer most orbit and which forms crystalline
structure
- pure semiconductor materials are Germanium, Silicon, and Carbon
- as the temperature increases in a semiconductor material, electrons drift
from one atom to another
- current flow in semiconductor materials consists of both electron flow and
hole movement
- has negative temperature coefficient of resistance, i.e. the resistance of
semiconductor decreases with increase in temperature and vice versa
- the resistivity lies between insulator and conductor
- doping increases conductivity of semiconductor

Instructor: Engr. Penmyrn I. Sabanal


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Type of Extrinsic Material

1. N-type Semiconductor
– Pentavalent materials
– Electrons are the majority carrier
– Holes are the minority carrier

Figure 1. Current flow in N-type material

2. P-type Semiconductor
– Trivalent materials
– Holes are the majority carrier
– Electrons are the minority carrier

Figure 2. Current flow in P-type material

Instructor: Engr. Penmyrn I. Sabanal


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Bonds in Semiconductor

- The valence electrons in semiconductor atoms take a vital role in bonding between
atoms in the semiconductor crystal.
- Bonding between atoms occurs because each atom has a tendency to feel its outer
most cell with eight electrons.
- Each semiconductor atom has four valence electrons; hence the atom can share four
other valence electrons of neighboring atoms to complete eight electrons in its outer
most cell.
- The bonding between atoms by sharing valence electrons is called the covalent
bond.

II. Semiconductor Diode


A diode is made from a small piece of semiconductor material, usually
silicon, in which half is doped as a p region and half is doped as an n region with a pn
junction and depletion region in between. The p region is called the anode and is
connected to a conductive terminal. The n region is called the cathode and is
connected to a second conductive terminal.

• Depletion Zone - The area where the positive and negative ions are located.

- Also known as depletion region and depletion region

Figure 3. The Diode

Instructor: Engr. Penmyrn I. Sabanal


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At the instant the p - n junction is formed, free electrons on the n side migrate
or diffuse across the junction to the p side. Once on the p side, the free electrons
are minority current carriers. The lifetime of these free electrons is short, however,
because they fall into holes shortly after crossing over to the p side. The important
effect here is that when a free electron leaves the n side and falls into a hole on the
p side, two ions are created: a positive ion on the n side and a negative ion on the
p side. As the process of diffusion continues, a barrier potential, V B , is created and the
diffusion of electrons from the n side to the p side stops.

• Barrier Potential , V B

Figure 4. Potential Difference at the P-N Junction

Ions create a potential difference at the p - n junction. This potential difference is


called the barrier potential and is usually designated V B . For Silicon, the barrier potential
at the p - n junction is approximately 0.7 V. For Germanium, V B is about 0.3 V. The barrier
potential cannot be measured externally with a voltmeter, but it does exist at the p - n
junction. The barrier potential stops the diffusion of current carriers.

Instructor: Engr. Penmyrn I. Sabanal


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Biasing the Diode

- The term bias is defined as a control voltage or current.

• No Applied Bias ( V = 0 V)

Figure 5. A p–n junction with no external bias: (a) an internal distribution of charge; (b) a diode symbol,
with the defined polarity and the current direction; (c) demonstration that the net carrier
flow is zero at the external terminal of the device when V D = 0 V.

* In the absence of an applied bias across a semiconductor diode, the net


flow of charge in one direction is zero.

Instructor: Engr. Penmyrn I. Sabanal


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• Reverse-Bias Condition ( V D < 0 V)

The negative terminal of the voltage source, V , is connected to the p -type


semiconductor material and that the positive terminal of the voltage source, V , is
connected to the n -type semiconductor material.

Figure 6. Reverse-biased p–n junction: (a) internal distribution of charge under reverse-bias conditions;
(b) reverse-bias polarity and direction of reverse saturation current.

* The current that exists under reverse-bias conditions is called the reverse
saturation current and is represented by I s .

* Leakage Current

Even a reverse-biased diode conducts a small amount of current, called leakage


current. The leakage current is mainly due to the minority current carriers in both
sections of the diode. The minority current carriers are holes in the n side and
free electrons in the p side. The minority current carriers exist as a result of
thermal energy producing a few electron-hole pairs. Since temperature
determines the number of electron-hole pairs generated, leakage current is
mainly affected by temperature.

Instructor: Engr. Penmyrn I. Sabanal


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• Forward-Bias Condition ( V D > 0 V)

A forward-bias or “on” condition is established by applying the positive


potential to the p -type material and the negative potential to the n -type material.
The p material is connected to the positive terminal of the voltage source, V.
The voltage source, V , must be large enough to overcome the internal barrier
potential V B .

Figure 7. Forward-biased p–n junction: (a) internal distribution of charge under forward-bias
conditions; (b) forward-bias polarity and direction of resulting current.

Instructor: Engr. Penmyrn I. Sabanal


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Shockleys Equation

Thermal Voltage

Instructor: Engr. Penmyrn I. Sabanal


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KEY TERMS:

• Atom The smallest particle of an element that possesses the unique


characteristics of that element.
• Barrier potential The amount of energy required to produce full conduction
across the pn junction in forward bias.
• Bias The application of a dc voltage to a diode to make it either conduct or block
current.
• Conductor A material that easily conducts electrical current.
• Crystal A solid material in which the atoms are arranged in a symmetrical
pattern.
• Doping The process of imparting impurities to an intrinsic semi conductive
material in order to control its conduction characteristics.
• Electron The basic particle of negative electrical charge.
• Free electron An electron that has acquired enough energy to break away from
the valence band of the parent atom; also called a conduction electron.
• Hole The absence of an electron in the valence band of an atom.
• Insulator A material that does not normally conduct current.
• Ionization The removal or addition of an electron from or to a neutral atom so
that the resulting atom (called an ion) has a net positive or negative charge.
• Orbital Subshell in the quantum model of an atom.
• PN junction The boundary between two different types of semi conductive
materials.
• Proton The basic particle of positive charge.
• Semiconductor A material that lies between conductors and insulators in its
conductive properties.
• Shell An energy band in which electrons orbit the nucleus of an atom.
• Valence Related to the outer shell of an atom.

Instructor: Engr. Penmyrn I. Sabanal

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