BFR106
Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor
• 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
• For UHF / VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR106 R7s 1=B 2=E 3=C SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage, VCEO V
TA = 25°C 16
TA = -55°C 15
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 3
Collector current IC 210 mA
Base current IB 21
Total power dissipation1) Ptot 700 mW
TS ≤ 76 °C
Junction temperature TJ 150 °C
Storage temperature TStg -55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 105 K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 15 - - V
IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES µA
VCE = 20 V, VBE = 0 - - 1
VCE = 10 V, VBE = 0 - 0.001 0.03
Collector-base cutoff current ICBO - 1 30 nA
VCB = 10 V, IE = 0
Emitter-base cutoff current IEBO - 1 30
VEB = 2 V, IC = 0
DC current gain hFE 70 100 140 -
IC = 70 mA, VCE = 8 V, pulse measured
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BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency fT 3.5 5 - GHz
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance Ccb - 0.85 1.2 pF
VCB = 10 V, f = 1 MHz, V BE = 0 ,
emitter grounded
Collector emitter capacitance Cce - 0.27 -
VCE = 10 V, f = 1 MHz, V BE = 0 ,
base grounded
Emitter-base capacitance Ceb - 3.9 -
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure NFmin dB
IC = 20 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz - 1.8 -
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz - 3 -
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BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Power gain, maximum available1) Gma dB
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz - 13 -
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz - 8.5 -
Transducer gain |S21e|2 dB
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz - 10.5 -
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz - 5 -
Third order intercept point at output2) IP3 - 31 - dBm
VCE = 8 V, IC = 70 mA, f = 0.9 GHz ,
ZS=ZL =50Ω
1dB compression point P-1dB - 22 -
IC = 70 mA, VCE = 8 V, ZS =ZL =50Ω,
f = 0.9 GHz
1G 1/2
ma = |S21e / S12e | (k-(k²-1) )
2IP value depends on termination of all intermodulation frequency components.
3
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR106
Total power dissipation P tot = ƒ(TS)
750
mW
600
550
500
Ptot
450
400
350
300
250
200
150
100
50
0
0 15 30 45 60 75 90 105 120 °C 150
TS
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BFR106
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet
website www.infineon.com/rf.models.
Please consult our website and download the latest versions before
actually starting your design.
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Package SOT23 BFR106
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BFR106
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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endangered.
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