Scribd
Upload
19 views2 pages

Silicon Substrate (Silicon Wafer) vs. Silicon Oxide

The document compares the properties of silicon substrate and silicon oxide, which is formed as a layer on the silicon wafer. The oxide layer takes up 46% of the substrate thickness initially and grows another 55% thicker. The oxide has a higher melting point and lower thermal conductivity than the substrate, making it more heat resistant. It also has a lower density and amorphous crystal structure compared to the crystalline structure of the substrate.

Uploaded by

Muhammad Faisal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
19 views2 pages

Silicon Substrate (Silicon Wafer) vs. Silicon Oxide

The document compares the properties of silicon substrate and silicon oxide, which is formed as a layer on the silicon wafer. The oxide layer takes up 46% of the substrate thickness initially and grows another 55% thicker. The oxide has a higher melting point and lower thermal conductivity than the substrate, making it more heat resistant. It also has a lower density and amorphous crystal structure compared to the crystalline structure of the substrate.

Uploaded by

Muhammad Faisal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

Silicon Substrate (Silicon Wafer) vs.

Silicon oxide
Silicon oxide is formed as s thick layer on top of a silicon wafer (pure 99.99% silicon) to
be used for the manufacture of integrated circuits and MEMS technology. The oxide
firstly takes up 46% of the thickness of the substrate itself and then grows up to 55
%more thickness overall.

The properties of the oxide differ from that of the substrate in many aspects such as
thermal properties, structural properties etc. They differences are as follows:

Substrate Oxide
1. It can be seen that the structure of substrate is one silicon atom attached to four
others, while in the oxide each silicon atom is attached to 4 oxygen atoms.

2. The substrate is a crystalline Silicon structure while the oxide is an amorphous


crystal structure.
Substrate Oxide
Melting Temp ( C ) 1414 1700
Thermal Conductivity ( W/m-C ) 148 1.1
Density ( g/cm^3) 2.392 2.27/2.18
3. The melting point of the oxide is more than that of the substrate making it more
heat resistant. The thermal conductivity being low helps it being resistant to heat
. Also it can be seen that oxides are lighter than the substrate itself.

4. The oxide layer is also transparent and can help in constructive interference of
light waves that hit the surface, while the substrate is Haze free having the best
possible surface finish and micro-roughness on the order of less than 10A.

References

https://pubchem.ncbi.nlm.nih.gov/compound/Silicon-dioxide#section=Heat-of-Combustion
https://www.el-cat.com/silicon-properties.htm#4
http://www.iue.tuwien.ac.at/phd/filipovic/node26.html

You might also like