512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Fast Erase and Byte-Program:
• Single Voltage Read and Write Operations – Sector-Erase Time: 18 ms (typical)
– 3.0-3.6V for SST39LF512/010/020/040 – Chip-Erase Time: 70 ms (typical)
– 2.7-3.6V for SST39VF512/010/020/040 – Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
• Superior Reliability 1 second (typical) for SST39LF/VF512
– Endurance: 100,000 Cycles (typical) 2 seconds (typical) for SST39LF/VF010
– Greater than 100 years Data Retention 4 seconds (typical) for SST39LF/VF020
• Low Power Consumption 8 seconds (typical) for SST39LF/VF040
(typical values at 14 MHz) • Automatic Write Timing
– Active Current: 5 mA (typical) – Internal VPP Generation
– Standby Current: 1 µA (typical)
• End-of-Write Detection
• Sector-Erase Capability
– Toggle Bit
– Uniform 4 KByte sectors – Data# Polling
• Fast Read Access Time: • CMOS I/O Compatibility
– 45 ns for SST39LF512/010/020/040 • JEDEC Standard
– 55 ns for SST39LF020/040
– 70 and 90 ns for SST39VF512/010/020/040 – Flash EEPROM Pinouts and command sets
• Latched Address and Data • Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/ significantly improves performance and reliability, while low-
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 ering power consumption. They inherently use less energy
CMOS Multi-Purpose Flash (MPF) manufactured with during Erase and Program than alternative flash technolo-
SST’s proprietary, high performance CMOS SuperFlash gies. The total energy consumed is a function of the
technology. The split-gate cell design and thick-oxide tun- applied voltage, current, and time of application. Since for
neling injector attain better reliability and manufacturability any given voltage range, the SuperFlash technology uses
compared with alternate approaches. The SST39LF512/ less current to program and has a shorter erase time, the
010/020/040 devices write (Program or Erase) with a 3.0- total energy consumed during any Erase or Program oper-
3.6V power supply. The SST39VF512/010/020/040 ation is less than alternative flash technologies. These
devices write with a 2.7-3.6V power supply. The devices devices also improve flexibility while lowering the cost for
conform to JEDEC standard pinouts for x8 memories. program, data, and configuration storage applications.
Featuring high performance Byte-Program, the The SuperFlash technology provides fixed Erase and Pro-
SST39LF512/010/020/040 and SST39VF512/010/020/ gram times, independent of the number of Erase/Program
040 devices provide a maximum Byte-Program time of 20 cycles that have occurred. Therefore the system software
µsec. These devices use Toggle Bit or Data# Polling to indi- or hardware does not have to be modified or de-rated as is
cate the completion of Program operation. To protect necessary with alternative flash technologies, whose Erase
against inadvertent write, they have on-chip hardware and and Program times increase with accumulated Erase/Pro-
Software Data Protection schemes. Designed, manufac- gram cycles.
tured, and tested for a wide spectrum of applications, they
To meet surface mount requirements, the SST39LF512/
are offered with a guaranteed typical endurance of 10,000
010/020/040 and SST39VF512/010/020/040 devices are
cycles. Data retention is rated at greater than 100 years.
offered in 32-lead PLCC and 32-lead TSOP packages. The
The SST39LF512/010/020/040 and SST39VF512/010/ SST39LF/VF010 and SST39LF/VF020 are also offered in
020/040 devices are suited for applications that require a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for
convenient and economical updating of program, configu- pin assignments.
ration, or data memory. For all system applications, they

©2005 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
S71150-09-000 1/06 MPF is a trademark of Silicon Storage Technology, Inc.
1 These specifications are subject to change without notice.
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Device Operation edge of the sixth WE# pulse. The internal Erase operation
begins after the sixth WE# pulse. The End-of-Erase can be
Commands are used to initiate the memory operation func-
determined using either Data# Polling or Toggle Bit meth-
tions of the device. Commands are written to the device
ods. See Figure 10 for timing waveforms. Any commands
using standard microprocessor write sequences. A com-
written during the Sector-Erase operation will be ignored.
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on Chip-Erase Operation
the rising edge of WE# or CE#, whichever occurs first. The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices provide a Chip-Erase operation, which
Read allows the user to erase the entire memory array to the ‘1’s
state. This is useful when the entire device must be quickly
The Read operation of the SST39LF512/010/020/040 and
erased.
SST39VF512/010/020/040 device is controlled by CE#
and OE#, both have to be low for the system to obtain data The Chip-Erase operation is initiated by executing a six-
from the outputs. CE# is used for device selection. When byte Software Data Protection command sequence with
CE# is high, the chip is deselected and only standby power Chip-Erase command (10H) with address 5555H in the last
is consumed. OE# is the output control and is used to gate byte sequence. The internal Erase operation begins with
data from the output pins. The data bus is in high imped- the rising edge of the sixth WE# or CE#, whichever occurs
ance state when either CE# or OE# is high. Refer to the first. During the internal Erase operation, the only valid read
Read cycle timing diagram for further details (Figure 5). is Toggle Bit or Data# Polling. See Table 4 for the command
sequence, Figure 11 for timing diagram, and Figure 19 for
Byte-Program Operation the flowchart. Any commands written during the Chip-
Erase operation will be ignored.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are programmed on a byte-by-byte basis. Before
programming, the sector where the byte exists must be Write Operation Status Detection
fully erased. The Program operation is accomplished in The SST39LF512/010/020/040 and SST39VF512/010/
three steps. The first step is the three-byte load sequence 020/040 devices provide two software means to detect the
for Software Data Protection. The second step is to load completion of a Write (Program or Erase) cycle, in order to
byte address and byte data. During the Byte-Program optimize the system write cycle time. The software detec-
operation, the addresses are latched on the falling edge of tion includes two status bits: Data# Polling (DQ7) and Tog-
either CE# or WE#, whichever occurs last. The data is gle Bit (DQ6). The End-of-Write detection mode is enabled
latched on the rising edge of either CE# or WE#, whichever after the rising edge of WE# which initiates the internal Pro-
occurs first. The third step is the internal Program operation gram or Erase operation.
which is initiated after the rising edge of the fourth WE# or
The actual completion of the nonvolatile write is asynchro-
CE#, whichever occurs first. The Program operation, once
nous with the system; therefore, either a Data# Polling or
initiated, will be completed, within 20 µs. See Figures 6 and
Toggle Bit read may be simultaneous with the completion
7 for WE# and CE# controlled Program operation timing
of the Write cycle. If this occurs, the system may possibly
diagrams and Figure 16 for flowcharts. During the Program
get an erroneous result, i.e., valid data may appear to con-
operation, the only valid reads are Data# Polling and Tog-
flict with either DQ7 or DQ6. In order to prevent spurious
gle Bit. During the internal Program operation, the host is
rejection, if an erroneous result occurs, the software routine
free to perform additional tasks. Any commands written
should include a loop to read the accessed location an
during the internal Program operation will be ignored.
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
Sector-Erase Operation tion is valid.
The Sector-Erase operation allows the system to erase the
device on a sector-by-sector basis. The sector architecture
is based on uniform sector size of 4 KByte. The Sector-
Erase operation is initiated by executing a six-byte com-
mand sequence with Sector-Erase command (30H) and
sector address (SA) in the last bus cycle. The sector
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H) is latched on the rising

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Data# Polling (DQ7) Software Data Protection (SDP)
When the SST39LF512/010/020/040 and SST39VF512/ The SST39LF512/010/020/040 and SST39VF512/010/
010/020/040 are in the internal Program operation, any 020/040 provide the JEDEC approved Software Data Pro-
attempt to read DQ7 will produce the complement of the tection scheme for all data alteration operation, i.e., Pro-
true data. Once the Program operation is completed, DQ7 gram and Erase. Any Program operation requires the
will produce true data. Note that even though DQ7 may inclusion of a series of three-byte sequence. The three-byte
have valid data immediately following completion of an load sequence is used to initiate the Program operation,
internal Write operation, the remaining data outputs may providing optimal protection from inadvertent Write opera-
still be invalid: valid data on the entire data bus will appear tions, e.g., during the system power-up or power-down.
in subsequent successive Read cycles after an interval of 1 Any Erase operation requires the inclusion of six-byte load
µs. During internal Erase operation, any attempt to read sequence. These devices are shipped with the Software
DQ7 will produce a “0”. Once the internal Erase operation is Data Protection permanently enabled. See Table 4 for the
completed, DQ7 will produce a “1”. The Data# Polling is specific software command codes. During SDP command
valid after the rising edge of fourth WE# (or CE#) pulse for sequence, invalid commands will abort the device to read
Program operation. For Sector- or Chip-Erase, the Data# mode, within TRC.
Polling is valid after the rising edge of sixth WE# (or CE#)
pulse. See Figure 8 for Data# Polling timing diagram and Product Identification
Figure 17 for a flowchart.
The Product Identification mode identifies the devices as
the SST39LF/VF512, SST39LF/VF010, SST39LF/VF020
Toggle Bit (DQ6) and SST39LF/VF040 and manufacturer as SST. This
During the internal Program or Erase operation, any con- mode may be accessed by software operations. Users
secutive attempts to read DQ6 will produce alternating ‘0’s may use the Software Product Identification operation to
and ‘1’s, i.e., toggling between 0 and 1. When the internal identify the part (i.e., using the device ID) when using multi-
Program or Erase operation is completed, the toggling will ple manufacturers in the same socket. For details, see
stop. The device is then ready for the next operation. The Table 4 for software operation, Figure 12 for the Software
Toggle Bit is valid after the rising edge of fourth WE# (or ID Entry and Read timing diagram, and Figure 18 for the
CE#) pulse for Program operation. For Sector- or Chip- Software ID entry command sequence flowchart.
Erase, the Toggle Bit is valid after the rising edge of sixth
WE# (or CE#) pulse. See Figure 9 for Toggle Bit timing dia- TABLE 1: PRODUCT IDENTIFICATION
gram and Figure 17 for a flowchart.
Address Data
Manufacturer’s ID 0000H BFH
Data Protection
Device ID
The SST39LF512/010/020/040 and SST39VF512/010/ SST39LF/VF512 0001H D4H
020/040 provide both hardware and software features to
SST39LF/VF010 0001H D5H
protect nonvolatile data from inadvertent writes.
SST39LF/VF020 0001H D6H
SST39LF/VF040 0001H D7H
Hardware Data Protection
T1.1 1150
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle. Product Identification Mode Exit/Reset
VDD Power Up/Down Detection: The Write operation is In order to return to the standard Read mode, the Software
inhibited when VDD is less than 1.5V. Product Identification mode must be exited. Exit is accom-
plished by issuing the Software ID Exit command
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
sequence, which returns the device to the Read operation.
high will inhibit the Write operation. This prevents inadvert-
Please note that the Software ID Exit command is ignored
ent writes during power-up or power-down.
during an internal Program or Erase operation. See Table 4
for software command codes, Figure 13 for timing wave-
form, and Figure 18 for a flowchart.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

FUNCTIONAL BLOCK DIAGRAM

SuperFlash
X-Decoder Memory

Memory Address Address Buffers & Latches

Y-Decoder

CE#
OE# Control Logic I/O Buffers and Data Latches
WE#
DQ7 - DQ0
1150 B1.1
SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040

WE#
VDD
A12

A15

A16

A18

A17
WE#
VDD
A12

A15

A16

A17
NC

WE#
VDD
A12

A15

A16

NC

NC
WE#
VDD
A12

A15

NC

NC

NC

SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040

4 3 2 1 32 31 30
A7 A7 A7 A7 5 29 A14 A14 A14 A14
A6 A6 A6 A6 6 28 A13 A13 A13 A13
A5 A5 A5 A5 7 27 A8 A8 A8 A8
A4 A4 A4 A4 8 26 A9 A9 A9 A9
32-lead PLCC
A3 A3 A3 A3 9 25 A11 A11 A11 A11
10
Top View 24
A2 A2 A2 A2 OE# OE# OE# OE#
A1 A1 A1 A1 11 23 A10 A10 A10 A10
A0 A0 A0 A0 12 22 CE# CE# CE# CE#
DQ0 DQ0 DQ0 DQ0 13 21 DQ7 DQ7 DQ7 DQ7
14 15 16 17 18 19 20
SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

1150 32-plcc NH P4.3

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6
DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6
DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

4
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040

A11 A11 A11 A11 1 32 OE# OE# OE# OE#

A9 A9 A9 A9 2 31 A10 A10 A10 A10
A8 A8 A8 A8 3 30 CE# CE# CE# CE#
A13 A13 A13 A13 4 29 DQ7 DQ7 DQ7 DQ7
A14 A14 A14 A14 5 28 DQ6 DQ6 DQ6 DQ6
A17 A17 NC NC 6 Standard Pinout 27 DQ5 DQ5 DQ5 DQ5
WE# WE# WE# WE# 7 26 DQ4 DQ4 DQ4 DQ4
VDD VDD VDD VDD 8 Top View 25 DQ3 DQ3 DQ3 DQ3
A18 NC NC NC 9 24 VSS VSS VSS VSS
A16 A16 A16 NC 10 Die Up 23 DQ2 DQ2 DQ2 DQ2
A15 A15 A15 A15 11 22 DQ1 DQ1 DQ1 DQ1
A12 A12 A12 A12 12 21 DQ0 DQ0 DQ0 DQ0
A7 A7 A7 A7 13 20 A0 A0 A0 A0
A6 A6 A6 A6 14 19 A1 A1 A1 A1
A5 A5 A5 A5 15 18 A2 A2 A2 A2
A4 A4 A4 A4 16 17 A3 A3 A3 A3

1150 32-tsop WH P1.0

FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM)

TOP VIEW (balls facing down) TOP VIEW (balls facing down)

SST39LF/VF010 SST39LF/VF020

6 6
A14 A13 A15 A16 NC NC NC VSS A14 A13 A15 A16 A17 NC NC VSS
5 5
A9 A8 A11 A12 NC A10 DQ6 DQ7 A9 A8 A11 A12 NC A10 DQ6 DQ7
1150 48-tfbga B3K P2.0

1150 48-tfbga B3K P3.0

4 4
WE# NC NC NC DQ5 NC VDD DQ4 WE# NC NC NC DQ5 NC VDD DQ4
3 3
NC NC NC NC DQ2 DQ3 VDD NC NC NC NC NC DQ2 DQ3 VDD NC
2 2
A7 NC A6 A5 DQ0 NC NC DQ1 A7 NC A6 A5 DQ0 NC NC DQ1
1 1
A3 A4 A2 A1 A0 CE# OE# VSS A3 A4 A2 A1 A0 CE# OE# VSS

A B C D E F G H A B C D E F G H

TOP VIEW (balls facing down)

SST39LF/VF040

6
A14 A13 A15 A16 A17 NC NC VSS
5
A9 A8 A11 A12 NC A10 DQ6 DQ7
1150 48-tfbga B3K P4.0

4
WE# NC NC NC DQ5 NC VDD DQ4
3
NC NC NC NC DQ2 DQ3 VDD NC
2
A7 A18 A6 A5 DQ0 NC NC DQ1
1
A3 A4 A2 A1 A0 CE# OE# VSS

A B C D E F G H

FIGURE 3: PIN ASSIGNMENT FOR 48-BALL TFBGA (6MM X 8MM) FOR 1 MBIT, 2 MBIT, AND 4 MBIT

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

TOP VIEW (balls facing down)

6
A2 A8 A9 A11 NC1 OE# A10 CE#
5
A1 A17 A14 A13 DQ7 DQ5 DQ6
4
A0 VDD WE# DQ3 DQ4
3
CE# A16 A18 DQ2 VSS

1150 34-wfbga MM P5.0

2
VSS A12 A15 A7 A0 DQ0 DQ1
1
A6 A5 A4 NC2 A3 A2 A1

A B C D E F G H J
Note: For SST39LF020, ball B3 is "No Connect"
For SST39LF010, balls B3 and A5 are "No Connect"

FIGURE 4: PIN ASSIGNMENT FOR 34-BALL WFBGA (4MM X 6MM) FOR 1 MBIT AND 2 MBIT

TABLE 2: PIN DESCRIPTION

Symbol Pin Name Functions
AMS1-A0 Address Inputs To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the
sector. During Block-Erase AMS-A16 address lines will select the block.
DQ7-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE# Chip Enable To activate the device when CE# is low.
OE# Output Enable To gate the data output buffers.
WE# Write Enable To control the Write operations.
VDD Power Supply To provide power supply voltage: 3.0-3.6V for SST39LF512/010/020/040
2.7-3.6V for SST39VF512/010/020/040
VSS Ground
NC No Connection Unconnected pins.
T2.1 1150
1. AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040

TABLE 3: OPERATION MODES SELECTION

Mode CE# OE# WE# DQ Address
Read VIL VIL VIH DOUT AIN
Program VIL VIH VIL DIN AIN
Erase VIL VIH VIL X1 Sector address,
XXH for Chip-Erase
Standby VIH X X High Z X
Write Inhibit X VIL X High Z/ DOUT X
X X VIH High Z/ DOUT X
Product Identification
Software Mode VIL VIL VIH See Table 4
T3.4 1150
1. X can be VIL or VIH, but no other value.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command 1st Bus 2nd Bus 3rd Bus 4th Bus 5th Bus 6th Bus
Sequence Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle
Addr1 Data Addr1 Data Addr1 Data Addr1 Data Addr1 Data Addr1 Data
Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA2 Data
Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX3 30H
Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID Entry4,5 5555H AAH 2AAAH 55H 5555H 90H
Software ID Exit6 XXH F0H
Software ID Exit6 5555H AAH 2AAAH 55H 5555H F0H
T4.2 1150
1. Address format A14-A0 (Hex),
Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF512.
Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence.
AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
2. BA = Program Byte address
3. SAX for Sector-Erase; uses AMS-A12 address lines
4. The device does not remain in Software Product ID mode if powered down.
5. With AMS-A1 = 0; SST Manufacturer’s ID = BFH, is read with A0 = 0,
SST39LF/VF512 Device ID = D4H, is read with A0 = 1,
SST39LF/VF010 Device ID = D5H, is read with A0 = 1,
SST39LF/VF020 Device ID = D6H, is read with A0 = 1,
SST39LF/VF040 Device ID = D7H, is read with A0 = 1.
6. Both Software ID Exit operations are equivalent

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Expo-
sure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.

OPERATING RANGE FOR SST39LF512/010/020/040 AC CONDITIONS OF TEST

Range Ambient Temp VDD Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Commercial 0°C to +70°C 3.0-3.6V Output Load
CL = 30 pF for SST39LF512/010/020/040
CL = 100 pF for SST39VF512/010/020/040
OPERATING RANGE FOR SST39VF512/010/020/040
See Figures 14 and 15
Range Ambient Temp VDD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS
VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/0401
Limits
Symbol Parameter Min Max Units Test Conditions
IDD Power Supply Current Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
Read2 20 mA CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase3 30 mA CE#=WE#=VIL, OE#=VIH
ISB Standby VDD Current 15 µA CE#=VIHC, VDD=VDD Max
ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max
ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max
VIL Input Low Voltage 0.8 V VDD=VDD Min
VIH Input High Voltage 0.7VDD V VDD=VDD Max
VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max
VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min
VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min
T5.7 1150
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.

TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol Parameter Minimum Units
TPU-READ1 Power-up to Read Operation 100 µs
TPU-WRITE 1 Power-up to Program/Erase Operation 100 µs
T6.1 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum
CI/O 1 I/O Pin Capacitance VI/O = 0V 12 pF
CIN1 Input Capacitance VIN = 0V 6 pF
T7.0 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 8: RELIABILITY CHARACTERISTICS

Symbol Parameter Minimum Specification Units Test Method
NEND1,2 Endurance 10,000 Cycles JEDEC Standard A117
TDR1 Data Retention 100 Years JEDEC Standard A103
ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78
T8.3 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

8
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
AC CHARACTERISTICS

TABLE 9: READ CYCLE TIMING PARAMETERS

VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/040
SST39LF512-45 SST39VF512-70
SST39LF010-45 SST39VF010-70
SST39LF020-45 SST39LF020-55 SST39VF020-70
SST39LF040-45 SST39LF040-55 SST39VF040-70
Symbol Parameter Min Max Min Max Min Max Units
TRC Read Cycle Time 45 55 70 ns
TCE Chip Enable Access Time 45 55 70 ns
TAA Address Access Time 45 55 70 ns
TOE Output Enable Access Time 30 30 35 ns
TCLZ1 CE# Low to Active Output 0 0 0 ns
TOLZ1 OE# Low to Active Output 0 0 0 ns
TCHZ 1 CE# High to High-Z Output 15 15 25 ns
TOHZ1 OE# High to High-Z Output 15 15 25 ns
TOH1 Output Hold from Address Change 0 0 0 ns
T9.2 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS

Symbol Parameter Min Max Units
TBP Byte-Program Time 20 µs
TAS Address Setup Time 0 ns
TAH Address Hold Time 30 ns
TCS WE# and CE# Setup Time 0 ns
TCH WE# and CE# Hold Time 0 ns
TOES OE# High Setup Time 0 ns
TOEH OE# High Hold Time 10 ns
TCP CE# Pulse Width 40 ns
TWP WE# Pulse Width 40 ns
TWPH1 WE# Pulse Width High 30 ns
TCPH1 CE# Pulse Width High 30 ns
TDS Data Setup Time 40 ns
TDH1 Data Hold Time 0 ns
TIDA 1 Software ID Access and Exit Time 150 ns
TSE Sector-Erase 25 ms
TSCE Chip-Erase 100 ms
T10.1 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

9
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

TRC TAA

ADDRESS AMS-0

TCE
CE#

TOE
OE#

VIH TOLZ TOHZ

WE#

TCHZ
TOH
HIGH-Z TCLZ HIGH-Z
DQ7-0
DATA VALID DATA VALID

1150 F03.0
Note: AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040

FIGURE 5: READ CYCLE TIMING DIAGRAM

INTERNAL PROGRAM OPERATION STARTS

TBP

ADDRESS AMS-0 5555 2AAA 5555 ADDR

TAH
TDH
TWP
WE#
TAS TWPH TDS

OE#

TCH
CE#

TCS

DQ7-0 AA 55 A0 DATA

SW0 SW1 SW2 BYTE

(ADDR/DATA) 1150 F04.0

Note: AMS = Most significant address

AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040

FIGURE 6: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

10
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

INTERNAL PROGRAM OPERATION STARTS

TBP

ADDRESS AMS-0 5555 2AAA 5555 ADDR

TAH
TDH
TCP
CE#
TAS TCPH TDS

OE#

TCH
WE#

TCS

DQ7-0 AA 55 A0 DATA

SW0 SW1 SW2 BYTE

(ADDR/DATA) 1150 F05.0
Note: AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040

FIGURE 7: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

ADDRESS AMS-0

TCE

CE#

TOEH TOES

OE#

TOE

WE#

DQ7 D D# D# D
1150 F06.0
Note: AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040

FIGURE 8: DATA# POLLING TIMING DIAGRAM

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

11
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

ADDRESS AMS-0

TCE

CE#

TOE TOES
TOEH

OE#

WE#

DQ6

TWO READ CYCLES

Note: AMS = Most significant address WITH SAME OUTPUTS
1150 F07.0
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040

FIGURE 9: TOGGLE BIT TIMING DIAGRAM

TSE
SIX-BYTE CODE FOR SECTOR-ERASE

5555 2AAA 5555 5555 2AAA SAX

ADDRESS AMS-0

CE#

OE#

TWP
WE#

DQ7-0
AA 55 80 AA 55 30

SW0 SW1 SW2 SW3 SW4 SW5

1150 F08.0
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
interchageable as long as minmum timings are met. (See Table 10)
SAX = Sector Address
AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040

FIGURE 10: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

12
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

TSCE
SIX-BYTE CODE FOR CHIP-ERASE

5555 2AAA 5555 5555 2AAA 5555

ADDRESS AMS-0

CE#

OE#

TWP
WE#

DQ7-0
AA 55 80 AA 55 10

SW0 SW1 SW2 SW3 SW4 SW5

1150 F17.0
Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are
interchageable as long as minmum timings are met. (See Table 10)
AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040

FIGURE 11: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM

Three-byte Sequence for

Software ID Entry

ADDRESS A14-0 5555 2AAA 5555 0000 0001

CE#

OE#

TWP TIDA

WE#

TWPH
TAA
DQ7-0
AA 55 90 BF Device ID

SW0 SW1 SW2 1150 F09.2

Note: Device ID = D4H for SST39LF/VF512, D5H for SST39LF/VF010, D6H for SST39LF/VF020, and D7H for SST39LF/VF040.

FIGURE 12: SOFTWARE ID ENTRY AND READ

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

ADDRESS A14-0 5555 2AAA 5555

DQ7-0 AA 55 F0

TIDA
CE#

OE#

TWP
WE#
TWHP
SW0 SW1 SW2 1150 F10.0

FIGURE 13: SOFTWARE ID EXIT AND RESET

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

14
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

VIHT

INPUT VIT REFERENCE POINTS VOT OUTPUT

VILT

1150 F12.1

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points
for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Test

VOT - VOUTPUT Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test

FIGURE 14: AC INPUT/OUTPUT REFERENCE WAVEFORMS

TO TESTER

TO DUT

CL

1150 F11.1

FIGURE 15: A TEST LOAD EXAMPLE

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

15
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

Start

Load data: AAH

Address: 5555H

Load data: 55H

Address: 2AAAH

Load data: A0H

Address: 5555H

Load Byte
Address/Byte
Data

Wait for end of

Program (TBP,
Data# Polling
bit, or Toggle bit
operation)

Program
Completed

1150 F13.1

FIGURE 16: BYTE-PROGRAM ALGORITHM

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

16
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

Internal Timer Toggle Bit Data# Polling

Byte-Program/ Byte-Program/ Byte-Program/

Erase Erase Erase
Initiated Initiated Initiated

Read byte Read DQ7

Wait TBP,
TSCE, or TSE

Read same No Is DQ7 =

byte true data?
Program/Erase
Completed
Yes

No Does DQ6 Program/Erase

match? Completed

Yes

Program/Erase
Completed
1150 F14.0

FIGURE 17: WAIT OPTIONS

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

17
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

Software ID Entry Software ID Exit &

Command Sequence Reset Command Sequence

Load data: AAH Load data: AAH Load data: F0H

Address: 5555H Address: 5555H Address: XXH

Load data: 55H Load data: 55H

Wait TIDA
Address: 2AAAH Address: 2AAAH

Load data: 90H Load data: F0H Return to normal

Address: 5555H Address: 5555H operation

Wait TIDA Wait TIDA

Read Software ID Return to normal

operation
1150 F15.2

FIGURE 18: SOFTWARE ID COMMAND FLOWCHARTS

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

18
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

Chip-Erase Sector-Erase
Command Sequence Command Sequence

Load data: AAH Load data: AAH

Address: 5555H Address: 5555H

Load data: 55H Load data: 55H

Address: 2AAAH Address: 2AAAH

Load data: 80H Load data: 80H

Address: 5555H Address: 5555H

Load data: AAH Load data: AAH

Address: 5555H Address: 5555H

Load data: 55H Load data: 55H

Address: 2AAAH Address: 2AAAH

Load data: 10H Load data: 30H

Address: 5555H Address: SAX

Wait TSCE Wait TSE

Chip erased Sector erased

to FFH to FFH

1150 F16.1

FIGURE 19: ERASE COMMAND SEQUENCE

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

19
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
PRODUCT ORDERING INFORMATION

SST 39 LF 040 - 45 - 4C - NH E
XX XX XXXX - XXX - XX - XXX X
Environmental Attribute
E1 = non-Pb
Package Modifier
H = 32 leads
K = 48 balls
M = 34 balls (54 possible positions)
Package Type
B3 = TFBGA (0.8mm pitch, 6mm x 8mm)
N = PLCC
M = WFBGA (0.5mm pitch, 4mm x 6mm)
W = TSOP (type 1, die up, 8mm x 14mm)
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
45 = 45 ns
55 = 55 ns
70 = 70 ns
Device Density
040 = 4 Mbit
020 = 2 Mbit
010 = 1 Mbit
512 = 512 Kbit
Voltage
L = 3.0-3.6V
V = 2.7-3.6V
Product Series
39 = Multi-Purpose Flash

1. Environmental suffix “E” denotes non-Pb solder. SST

non-Pb solder devices are RoHS compliant.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

20
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Valid combinations for SST39LF512
SST39LF512-45-4C-NH SST39LF512-45-4C-WH
SST39LF512-45-4C-NHE SST39LF512-45-4C-WHE

Valid combinations for SST39VF512

SST39VF512-70-4C-NH SST39VF512-70-4C-WH
SST39VF512-70-4C-NHE SST39VF512-70-4C-WHE
SST39VF512-70-4I-NH SST39VF512-70-4I-WH
SST39VF512-70-4I-NHE SST39VF512-70-4I-WHE

Valid combinations for SST39LF010

SST39LF010-45-4C-NH SST39LF010-45-4C-WH SST39LF010-45-4C-B3K SST39LF010-45-4C-MM
SST39LF010-45-4C-NHE SST39LF010-45-4C-WHE SST39LF010-45-4C-B3KE SST39LF010-45-4C-MME

Valid combinations for SST39VF010

SST39VF010-70-4C-NH SST39VF010-70-4C-WH SST39VF010-70-4C-B3K
SST39VF010-70-4C-NHE SST39VF010-70-4C-WHE SST39VF010-70-4C-B3KE
SST39VF010-70-4I-NH SST39VF010-70-4I-WH SST39VF010-70-4I-B3K
SST39VF010-70-4I-NHE SST39VF010-70-4I-WHE SST39VF010-70-4I-B3KE

Valid combinations for SST39LF020

SST39LF020-45-4C-NH SST39LF020-45-4C-WH SST39LF020-45-4C-B3K SST39LF020-45-4C-MM
SST39LF020-45-4C-NHE SST39LF020-45-4C-WHE SST39LF020-45-4C-B3KE SST39LF020-45-4C-MME
SST39LF020-55-4C-NH SST39LF020-55-4C-WH
SST39LF020-55-4C-NHE SST39LF020-55-4C-WHE

Valid combinations for SST39VF020

SST39VF020-70-4C-NH SST39VF020-70-4C-WH SST39VF020-70-4C-B3K
SST39VF020-70-4C-NHE SST39VF020-70-4C-WHE SST39VF020-70-4C-B3KE
SST39VF020-70-4I-NH SST39VF020-70-4I-WH SST39VF020-70-4I-B3K
SST39VF020-70-4I-NHE SST39VF020-70-4I-WHE SST39VF020-70-4I-B3KE

Valid combinations for SST39LF040

SST39LF040-45-4C-NH SST39LF040-45-4C-WH
SST39LF040-45-4C-NHE SST39LF040-45-4C-WHE SST39LF040-45-4C-B3KE
SST39LF040-55-4C-NH SST39LF040-55-4C-WH
SST39LF040-55-4C-NHE SST39LF040-55-4C-WHE

Valid combinations for SST39VF040

SST39VF040-70-4C-NH SST39VF040-70-4C-WH
SST39VF040-70-4C-NHE SST39VF040-70-4C-WHE SST39VF040-70-4C-B3KE
SST39VF040-70-4I-NH SST39VF040-70-4I-WH
SST39VF040-70-4I-NHE SST39VF040-70-4I-WHE SST39VF040-70-4I-B3KE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

21
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
PACKAGING DIAGRAMS

TOP VIEW SIDE VIEW BOTTOM VIEW

.495
.485 .112
Optional .453 .106
Pin #1 .447
Identifier .048 .020 R. .029 x 30˚ .040 R.
.042 2 1 32 MAX. .023 .030

.042 .021
.048 .013
.595 .553 .032 .400 .530
.585 .547 .026 BSC .490

.050
BSC

.015 Min.
.095
.050 .075
BSC .032
.140 .026
.125

Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
32-plcc-NH-3
4. Coplanarity: 4 mils.

32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC)

SST PACKAGE CODE: NH

TOP VIEW BOTTOM VIEW

8.00 ± 0.20 5.60
0.80 0.45 ± 0.05
(48X)

6 6
5 5
4 4.00 4
6.00 ± 0.20
3 3
2 2
1 1
0.80

A B C D E F G H H G F E D C B A

A1 CORNER A1 CORNER
1.10 ± 0.10
SIDE VIEW

0.12
SEATING PLANE 1mm
0.35 ± 0.05

Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
4. Ball opening size is 0.38 mm (± 0.05 mm) 48-tfbga-B3K-6x8-450mic-4

48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 6MM X 8MM

SST PACKAGE CODE: B3K

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

22
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

1.05
0.95
Pin # 1 Identifier
0.50
BSC

8.10 0.27
7.90 0.17

12.50 0.15
12.30 0.05

DETAIL
1.20
max.
0.70
0.50 14.20
13.80

0˚- 5˚
0.70
0.50
Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min). 1mm 32-tsop-WH-7
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM

SST PACKAGE CODE: WH

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

23
 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet

TOP VIEW BOTTOM VIEW

6.00 ± 0.08
4.00
0.50 0.32 ± 0.05
(34X)
6 6
5 5
4 4
3 4.00 ± 0.08 2.50 3
2 2
1 1

0.50
A B C D E F G H J J H G F E D C B A

A1 CORNER A1 INDICATOR4

DETAIL 0.63 ± 0.10 SIDE VIEW

0.08
SEATING PLANE
0.20 ± 0.06 1mm

Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.08 mm
4. No ball is present in position A1; a gold-colored indicator is present.
5. Ball opening size is 0.29 mm (± 0.05 mm) 34-wfbga-MM-4x6-32mic-1

34-BALL VERY-VERY-THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (WFBGA) 4MM X 6MM

SST PACKAGE CODE: MM

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

24
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE 11: REVISION HISTORY
Number Description Date
01 • 2000 Data Book Feb 2000
02 • Changed speed from 45 ns to 55 ns for the SST39LF020 and SST39LF040 Aug 2000
03 • 2002 Data Book: Reintroduced the 45 ns parts for the SST39LF020 and SST39LF040 Feb 2002
04 • Added the B3K package for the 2 Mbit devices Oct 2002
• Added footnote in Table 5 to indicate IDD Write is 30 mA max for Erase operations in
the Industrial temperature range.
05 • Changes to Table 5 on page 8 Mar 2003
– Added footnote for MPF power usage and Typical conditions
– Clarified the Test Conditions for Power Supply Current and Read parameters
– Clarified IDD Write to be Program and Erase
– Corrected IDD Program and Erase from 20 mA to 30 mA
• Part number changes - see page 21 for additional information
06 • Added new “MM” Micro-Package MPNs for 1M and 2M LF parts- see page 21 Oct 2003
07 • 2004 Data Book Nov 2003
• Added non-Pb MPNs and removed footnote (See page 21)
• Updated B3K and MM package diagrams
08 • Added RoHS Compliant statement. Dec 2005
• Added 4 MBit to Figure 3.
• Revised Absolute Max Stress Ratings for Surface Mount Solder Reflow Temperature
• Removed SST39VFxxx-90 Timing Parameters from Figure 9.
• Added Footnote and removed Read Access Speed 90 = 90 to Product Ordering Infor-
mation.
• Removed 90 part numbers Valid Combinations lists
09 • Edited page Valid Combinations on page 21. Changed 39LF040-70-4C-B3KE to Jan 2006
39LF040-45-4C-B3KE

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com

©2005 Silicon Storage Technology, Inc. S71150-09-000 1/06

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