DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D187

PMST3906
PNP switching transistor
Product specification 1999 Apr 22
Supersedes data of 1997 May 27
Philips Semiconductors Product specification

PNP switching transistor PMST3906

FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 40 V). 1 base
2 emitter
APPLICATIONS 3 collector
• Switching in telephony and professional communication
equipment.

handbook, halfpage 3
DESCRIPTION
3
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST3904.
1

MARKING 2

TYPE NUMBER MARKING CODE(1) 1 2

PMST3906 ∗2A Top view MAM048

Note
1. ∗ = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol.
∗ = t : Made in Malaysia.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −40 V
VCEO collector-emitter voltage open base − −40 V
VEBO emitter-base voltage open collector − −6 V
IC collector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 22 2
Philips Semiconductors Product specification

PNP switching transistor PMST3906

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 625 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA
IE = 0; VCB = −30 V; Tj = 150 °C − −10 µA
IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA
hFE DC current gain VCE = −1 V; (see Fig.2)
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA; note 1 60 −
IC = −100 mA; note 1 30 −
VCEsat collector-emitter saturation IC = −10 mA; IB = −1 mA; note 1 − −200 mV
voltage IC = −50 mA; IB = −5 mA; note 1 − −200 mV
VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 − −850 mV
IC = −50 mA; IB = −5 mA; note 1 − −950 mV
Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF
Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF
fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz
F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; − 4 dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 65 ns
td delay time − 35 ns
tr rise time − 35 ns
toff turn-off time − 300 ns
ts storage time − 225 ns
tf fall time − 75 ns

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

1999 Apr 22 3
Philips Semiconductors Product specification

PNP switching transistor PMST3906

MGD835
160
handbook, full pagewidth

hFE

120

80

40

0
−10−2 −10−1 −1 −10 −102 −103
IC (mA)

VCE = −1 V

Fig.2 DC current gain; typical values.

handbook, full pagewidth VBB VCC

RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
Vi DUT

R1

MGD624

Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope input impedance Zi = 50 Ω.

Fig.3 Test circuit for switching times.

1999 Apr 22 4
Philips Semiconductors Product specification

PNP switching transistor PMST3906

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D B E A X

y HE v M A

A1
c
1 2

e1 bp Lp
w M B

e detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max
1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 0.65 0.2 0.2
0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT323 SC-70 97-02-28

1999 Apr 22 5
Philips Semiconductors Product specification

PNP switching transistor PMST3906

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 22 6
Philips Semiconductors Product specification

PNP switching transistor PMST3906

NOTES

1999 Apr 22 7
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© Philips Electronics N.V. 1999 SCA63

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 22 Document order number: 9397 750 05731