Data Sheet: 1N4001ID To 1N4007ID
Data Sheet: 1N4001ID To 1N4007ID
DATA SHEET
handbook, halfpage
M3D119
1N4001ID to 1N4007ID
Rectifiers
Product specification 1996 Jun 10
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors Product specification
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V
VR continuous reverse voltage
1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V
IF(AV) average forward current averaged over any 20 ms − 1.00 A
period; Tamb = 75 °C; see Fig.2
averaged over any 20 ms − 0.75 A
period; Tamb = 100 °C; see Fig.2
IFRM repetitive peak forward current − 10 A
IFSM non-repetitive peak forward current half sinewave; 60 Hz − 20 A
Tstg storage temperature −65 +175 °C
Tj junction temperature −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
1996 Jun 10 3
Philips Semiconductors Product specification
GRAPHICAL DATA
MBH386 MBH385
1.5 10
handbook, halfpage handbook, halfpage
IF
(A) IF
(A)
1
0.5
0 10−1
0 100 Tamb (°C) 200 0 0.5 1 VF (V) 1.5
Fig.2 Maximum forward current as a function of Fig.3 Forward current as a function of forward
ambient temperature. voltage; typical values.
50
handbook, halfpage
25
7
50
MGA200
Dimensions in mm.
1996 Jun 10 4
Philips Semiconductors Product specification
PACKAGE OUTLINE
0.81
max
2.15 MBC051
max 28 min 3.8 max 28 min
Dimensions in mm.
Fig.5 SOD81.
DEFINITIONS
1996 Jun 10 5