Semiconductor Devices and Circuits - - Unit 10 ... https://onlinecourses.nptel.ac.in/noc18_ee32/un...

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Unit 10 - Week
9: MOSFET: I

Course
outline
Assignment 9
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the portal assignment.

Week 1 : 1) Consider a n-channel MOSFET with W = 15 um, L = 2 um, and Cox = 69 nF/cmsq. 1 point
Excursion in Assume that, in the non-saturation regime with VDS = 0.1V , the drain current is 35 uA for a gate-to-
Quantum source voltage of 1.5 V, and 75 uA for a gate-to-source voltage of 2.5 V. Compute the threshold
Mechanics
voltage of the MOSFET from the given data. (Use small- VDS approximation in the drain current
equation)
Week 2 :
Excursion in
Solid State
Physics
0.3 V
Week 3 : Density
of States, Fermi 0.1 V
Function and
0.935 V
Doping
0.625 V
Week 4 :
Recombination- No, the answer is incorrect.
Generation, Score: 0
Charge
Accepted Answers:
Transport and
Continuity 0.625 V
Equation
2) The parameters of a p-channel MOSFET are as follows: Mobility of holes = 310 cmsq/Vs , 1 point
oxide thickness = 22 nm, W/L = 60, and threshold voltage is -0.4 V. If the transistor is biased in
Week 5 : Metal- ID1
Semiconductor saturation region, find the ratio of drain currents corresponding to
ID2
Junctions VSG = 1V and VSG = 2V
Week 6 : PN
Junction
2.53

Week 7 : Bipolar 0.14

Junction
Transistors 0.85

0.44
Week 8 : Metal
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Semiconductor Devices and Circuits - - Unit 10 ... https://onlinecourses.nptel.ac.in/noc18_ee32/un...

threshold voltage is 1V. by

Powered The device is biased with a gate-to-source voltage of 3V and a drain-to-source
Week 9:
voltage of 5V. Assume that the mobility is 300 cmsq/Vs. The MOSFET is biased in which region of
MOSFET: I
operation ?
MOSFET:
Introduction Linear
MOSFET: I-V Sub-threshold
Characteristics
Saturation
MOSFET: I-V
Characteristics None of the above
- Contd.
No, the answer is incorrect.
MOSFET: I-V
Score: 0
Characteristics
- Contd. Accepted Answers:
Saturation
Subthreshold
Swing, 4) For the n-MOSFET given in question (3), calculate the value of transconductance. 1 point
Additional
Concepts
4.14 mS
Quiz :
Assignment 9 1.035 mS

Assignment 9: 2.07 mS
Solution

Week 10: 8.28 mS

MOSFET: II

No, the answer is incorrect.

Week 11:
Score: 0
Circuits
Accepted Answers:
Week 12: Thin 1.035 mS
Film Transistors
(TFTs), Tutorial 5) Consider an ideal n-channel MOSFET with channel length 1.25 um. The mobility of 1 point
2
Sessions electrons is 650cm /V s and the threshold voltage is 0.65 V. Design the channel width of the
MOSFET such that the saturation drain current is 4 mA for an applied gate-to-source voltage of 5 V.
Take oxide capacitance to be 69 nF/cmsq.

11.8 um

65.8 um

125 um

40 um

No, the answer is incorrect.

Score: 0
Accepted Answers:
11.8 um

6) The threshold voltage for a MOSFET at 300K is 350 mV with a reduction of 1mV/K. 0 points
2
Assume that the mobility changes with temperature (in K) as : μ(T ) = μ(300K) ∗ (300K/T )
Assuming perfect velocity saturation, the gate voltage, at which the saturation currents at 300K and
400K are equal, is ________. (Make an assumption that the saturation velocity remains independent
of temperature).

200 mV

695 mV

478 mV

312 mV

No, the answer is incorrect.

Score: 0

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Semiconductor Devices and Circuits - - Unit 10 ... https://onlinecourses.nptel.ac.in/noc18_ee32/un...

Accepted Answers:
478 mV

7) Consider a MOS structure with a p-type semiconductor substrate doped 1 point

16 −3
to NA = 10 cm , with thickness of SiO2 insulator as 50 nm. Let the equivalent oxide surface
charge density be 16 nC/cmsq. The metal-semiconductor work-function difference is - 0.8 V. Calculate
the value of flat-band voltage.

- 1.03 V

- 1.43 V

- 0.8 V

1.43 V

No, the answer is incorrect.

Score: 0
Accepted Answers:
- 1.03 V

8) For a MOSFET in the sub-threshold region of operation, the log-IDS vs VGS plot is a/an: 1 point

Quadratic curve

Exponential curve

Straight line

None of the above

No, the answer is incorrect.

Score: 0
Accepted Answers:
Straight line

9) Which of the following statements is/are true with regards to Channel Length Modulation in 1 point
a MOSFET device ?

i. It is similar to Base width modulation in BJTs

ii. The pinch-off point relocates with respect to applied drain voltage
iii. Drain voltage influences the current-voltage charcteristics of a MOSFET in saturation

iii

i and ii

i, ii and iii

No, the answer is incorrect.

Score: 0
Accepted Answers:
i, ii and iii

10)The subthreshold swing of an enhancement mode MOSFET: 0 points

increases as the depletion capacitance per unit area decreases

increases as the depletion capacitance per unit area increases

is typically lesser than 59mV/dec at 300K

is typically greater than 59mV/dec at 300K

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Semiconductor Devices and Circuits - - Unit 10 ... https://onlinecourses.nptel.ac.in/noc18_ee32/un...

No, the answer is incorrect.

Score: 0
Accepted Answers:
is typically greater than 59mV/dec at 300K

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