Lab Session 3
Lab Session 3
• New DGSs are proposed which bring a great convenience to the design of
microwave circuit to realize various passive and active device compact structures
and to suppress the harmonics.
• In order to derive the equivalent circuit parameters of DGS unit at the reference
plane, the S-parameters vs. frequency should be calculated by full-wave
electromagnetic (EM)-simulation to explain the cutoff and attenuation pole
characteristics of the DGS section. The circuit parameters for the derived
equivalent circuit can be extracted from the simulation result which can be fit for
the one-pole Butterworth-type low-pass response.
• There is no direct correlation between the physical dimensions of DGS and the
equivalent LC parameters.
DGS Structures
“Equivalent Circuit of the Dumbbell Head DGS
Structure”
As the etched area of the unit lattice increases, the effective series inductance increase
and increasing the series inductance gives rise to a lower cutoff frequency. When the
etched gap distance increases, the effective capacitance decreases so that the
attenuation pole location moves up to higher frequency.
DGS Structures