AO4474

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4474/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V
is suitable for use as a high side switch in SMPS and ID = 13.4A (V GS = 10V)
general purpose applications. RDS(ON) < 11.5mΩ (VGS = 10V)
AO4474 and AO4474L are electrically identical. RDS(ON) < 13.5mΩ (VGS = 4.5V)
-RoHS Compliant
-AO4474L is Halogen Free
UIS Tested
Rg,Ciss,Coss,Crss Tested

D
S D
S D
S D
G D G

SOIC-8
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 13.4
Current A, F TA=70°C IDSM 10.7 A
B
Pulsed Drain Current IDM 60
TA=25°C 3.7
PD W
Power Dissipation TA=70°C 2.4
B, G
Avalanche Current IAR 42 A
B, G
Repetitive avalanche energy 0.1mH EAR 88 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 28 34 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 57 71 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 16 23 °C/W

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AO4474

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 0.1 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.55 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 60 A
VGS=10V, ID=13.4A 9.5 11.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 16.2 18
VGS=4.5V, ID=10A 11 13.5 mΩ
gFS Forward Transconductance VDS=5V, ID=13.4A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1.0 V
IS Maximum Body-Diode Continuous Current 5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1210 1452 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 330 396 pF
Crss Reverse Transfer Capacitance 85 119 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.2 1.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 22 28 nC
Qg(4.5V) Total Gate Charge 10 13 nC
VGS=10V, VDS=15V, ID=13.4A
Qgs Gate Source Charge 3.7 nC
Qgd Gate Drain Charge 2.7 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.1Ω, 6.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 21 ns
tf Turn-Off Fall Time 2.8 ns
trr Body Diode Reverse Recovery Time IF=13.4A, dI/dt=100A/µs 36 45 ns
Qrr Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=100A/µs 47 nC
trr Body Diode Reverse Recovery Time IF=13.4A, dI/dt=500A/µs 20 27 ns
Qrr Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=500A/µs 55 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev3: May 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
10V
VDS=5V
80 6V 25

4.5V 20
60
ID (A)

ID(A)
3V 15 125° 25°C
40
10

20 VGS=2.5V
5

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

15 2

1.8 VGS=10V
Normalized On-Resistance

13 ID=13.4A
VGS=4.5V 1.6
RDS(ON) (mΩ)

11 VGS=4.5
1.4

9 1.2
VGS=10V
1
7
0.8

5 0.6
0 5 10 15 20 25 30 0 30 60 90 120 150
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

20 1.0E+02

1.0E+01
ID=13.4A
125°C
1.0E+00
15 25°C
RDS(ON) (mΩ)

125°C 1.0E-01
IS (A)

1.0E-02
10
1.0E-03
25°C
1.0E-04

5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
VDS=15V
ID=13.4A
8
1500

Capacitance (pF)
Ciss
VGS (Volts)

6
1000
4

500 Coss
2

Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100.0
In descending order 10µs
TA=25°C, 100°C, 125°C, 150°C RDS(ON)
IA, Peak Avalanche Current (A)

limited 100µ

10.0 1ms
ID (Amps)

10 10ms

1.0
DC
TJ(Max)=150°C
TA=25°C
1 0.1
0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100
VDS (Volts)
Time in Avalache, t A (ms) Figure 10: Maximum Forward Biased
Figure 9: Single Pulse Avalanche Capability Safe Operating Area (Note F)

140
TJ(Max)=150°C
120 TA=25°C

100
Power (W)

80

60

40

20

0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note G)

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AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

RθJA=34°C/W
Thermal Resistance

0.1

PD
0.01
TON
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note G)

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