UNIT IX

ELECTRONIC DEVICES

Formulae of this Unit:

eV
[ ( ) ]
1. I =I 0 exp n k T −1
B

V i−V z
2. R=
I

3. I E =I C + I B
I
C
4. α = I
E

I
C
5. β = I
B

β
6. α = 1+ β

α
7. β= 1−α

∆V
( )
8. r i= ∆ I
BE

B V CE

∆V
( )
9. r o = ∆ I
CE

C IB

R out
10. AV =β ( )
R¿

11.(a) OR operation, Y= A+B

(b) AND operation Y=A.B
(c) NOT operation Y= A
12.Combination of gates
(a) NAND gate is combination of AND and NOT gates.
(b) NOR gate is combination of NOT and OR gates.
(c) XOR gate is combination of two NOT gates, two AND gates and one OR gate.

100
101
 Level -01
(Numerical direct formula Based)

Q.1 : What is relation between voltage gain and trans conductor of a trimester amplifier?

Ans :- Voltage gain = Trans – Conductance X Output resistance.

Q. 2 : A transistor is being used as a common emitter amplifier. What is the value of phase difference, if any
,between the collector-emitter voltage and input signal?

Ans.: 1800 or π radian

Q.3. Write is the phase relationship between the output and input voltage in the common faze transmitter
amplifier?

Ans: Output voltage is in phase with the input signal voltage.

Q.4. Write the relation between current gains ∞ or β.

Ans : β = ∞ _
1-∞

Q.5. Calculate the Current gain β of a transistor, if the current gain ∞ = 0.98

Ans: β = ∞ _ = 0.98 49.

1-∞ 1+100

Q. 6 For a Transmitter the value of β is 100, what is the value of ∞ .

Ans ∞ = β___ = 100__ = 0.99

1+ β 1+100

Q.7. When the voltage drop across a p.n. Junction is increased from 0.65 v to 0.70, the charge in the diode
current is 5 ma . What is the dynamic resistance of the diode ?

Ans. Here ,
∆V= 0.7 – 0.65 = 0.05 V

∆I = 5mA = 5 x 10 -3 A
Dynamic resistance of junction diode is

rd = __∆V_ = _0.05__ = 10 Ω
∆I 5 x 10-3

102
Q.8. p – n – p transistor circuit, the collector is 10 ma , If 90 % of the reach the Collector, find emitter and
base currents.

Ans: Here, I E = 10 m A

As 90 % of the holes reach the collector, so the collector current ,

I c = 90 % of I E = 90/100 IE

I E = 100/900 Ic = 100/90 x 10 = 11 m A.

Base Current, I B = I E – I c = 11-10 = 1 mA.

Q.9. A photodiode is fabricated froma semi conductor with band gap of 2.8 e V . Can it detect a wave of 6000
nm? Justify.

Ans : Energy Corresponding to Wave length 6000 nm is

E = _hc__ = 6.6 x 10-34 x 3 x 108_ joule

π 6000 x 10-9

= 3.3 x 10-20 J

= 3.3 x 10-20 0.2eV

1.6 x 10-19
The photon energy ( E = 0.2 ev ) of given waveleanth is much less then band gap ( Eg. ) , hance it caneot
detevt the given wavelength.

Q.10. The number of silicon atoms per m3 is 5 x 1022 atom per 33 of Anesenice and 5 x 1020 per m3 atoms of
Indian. Calculate the number of electrons and holes . Given that Ni = 1.5 X 1016 per m3 . In the material
N-type on P-Type?

Ans : Arnesic is n-type impurty and indium is P-type impurity Number of electron, ne = n0 – nA = 5 x 1022 – 5
x 1020= 4.95 x 1022m-3

We have, ni2 = nh
ne

Given, ni = 1.5 x 1016 m -3

Number of holes, ne = ni2_ = (1.5 x 1016)2

ne 4.95 x 1022

nh = 4.54 x 109m-3
as ne > ne ; so the material is an n-type semiconductor.

103
 LEVEL –II
Moderate difficulty level

Q.1. When the voltage drop across a p-n junction diode is incrase from 0.65 v to 0.70 v , the change in the
diode current is 5mA. What is the dynamic resistance of the diode?

Ans : rd = _∆v_
∆I

= __0.70 – 0.65_
5x10-3

= __0.05__
5 x 10-3

= 10Ω.

Q.2. Diode used in figure has a constant voltage drop at 0.5 V at all current and a maximum power rating of
100mw. What should be the value of resistance R, coneected in series for maximum current.

Ans : Current , I = _P_

V

= 100 x 10-13_
0.5

=0.2 A
From Circuit ,

IR +0.5 = 1.5

i.e., 0.2 +0.5 = 1.5

i.e. R = 1.5 – 0.5 = 5 Ω.

0.2
Q.9. On the figure shown, find out the current passing through RL and Zener diode :

Ans : Here,
V2 = 5V
Voltage drop across R = Input voltage – V2
104
 = 10 – 5 = 5v

= IL = V2 5v 5 x 10-2A
Here,
Current through R,

I = Voltage drop across R = _5V_ 6.25 x 10-2 A

R 80Ω

Applying Kirchoff’s Law :

I = I2 + I L

I2 = I - IL

= 6.25 x 10-2

= 1.25 x 10-2A.

Q.4. A common emitter transistor has current gain of 100. If emitter current is 8.08 m A, find the base and
collector current.
Ans: Here,
Β = 100

IE = 8.08 MA
Using, _IC_ = B
IB
We get
Ic = BIB = 100 IB
Using , IE =IB + IC
We get
IE = 101 IB
Or, IB = _IE_ = 8.08_ = 0.08mA
101 101
From Eqn (i) IC = 100 x 0.08 = 8ma.
Q 5. (I) Calculate the value of output voltage V0 and Current I if Silicon diode and germanium diode
conduct at 0.7 v and 0.3 v respectively ( refer figure)

105
 (II) If now Germanium diode is coneected 12 v in reverse polarity , find new value of V0 and I.

Ans.: (I) Germanium diode conducts at 0.3 v only , so curret will prefer to pass through germanium diode so,

V0 = 12 – 0.3 = 11.7 v

And,
I = 11.7___
5 x 103

= 2.34 mA

(II) When germanium diode is reversed biased, the current will flow through the silicon diode.

Then,
V0 = 12 – 0.7 = 11.3 v
And ,
I = _11.3_ 2.26 mA
5 x 103
Q.6 In a common –emitter transistor amplifier, the input resistance is 200Ω , RL = 20KΩ. Find (i) voltage
gain and (ii) Power gain . Goven current gain B = 10.

Ans: Here ,
Ri = 200 Ω , RL = 20 k Ω
= 2 x 104 Ω

(i) Voltage gain, Av = β RL/RI

= 10 x 2 x 104 103 = 103

200

(ii) Power GainB2 RL/Ri = (10)2 x 2 x 104

200

= 104

106
Q.7. A full wave rectifier is built with help of two diodes each having resistance is 1.2 10-3 Ω. A.C. input
signal has
(i) Maximum value of applied voltage
(ii) r.m.s. value of current
(iii) Current
(iv) Efficiency
(v) Ripple factor

Ans : (i) Vo = Io + (RL + RF )

= 1_ (6+1.2)103
24

= 300V

(ii) Irma = Io_ = 1___

√2 24 x √2

= 29.46 x 103A

(i) Id.c = 2 _Io_

π

= 2 x 1__
24 x 3.14

= 2 x 1_ (* there are 2 diodes)

26.5 x 103

(ii) N = 82 RL _
Rf +RL

= 8.12 6.103__
(6+1.2)103

= 8.12_
1.2

= 67.7 %

½ ½
(iii) Ripple factor, 2 2
Irms__ -1 = _ 29.5_ -1 = 0.48
Iav 26.5

107
Q.8. For a common emitter amplifier , current gain = 50. If the emitter current is 6.6 mA, Calculate gain ,
when emitter is working as common-base amplifier.

Ans. Here
β = 50
IE = 6.6mA

Step 1. Since β = _IC__

IB

= Ic = β IB = 50IB

Step 2. Now ,
IE = Ic + I B

6.6 = 50IB + IB

IB = _6.6_ = 0.129 mA

Hence, Ic = 50 x _6.6__ = 6.47mA

51

Step 3. Β = _∞ ___ or, ∞ = ___β____

1- ∞ 1+ β

= _50__ = 0.98
51

Q.9. For a transistor with β = 75 the maximum collector current for an emitter current of 5mA ?

Abs :- Here,
β = 75

IE = 5mA
Step 1 :-
Using
β = _∞___ we get,
1- ∞

75 = __∞__ or, 75 – 75 ∞ = ∞
1-∞

Or, 76∞ = 75 or, ∞ = 75 x 5

76
Step 2.,
∞ = Ic Ic = ∞IE = 75 x 5 = 4.93mA.
76
108
Q.10. In n p n transistor circuit, the collector current is 10 mA. If 95%of the electron emitted reach the
collector, what is the base current ?

Ans : Step 1 :-
Ic = 95 %

IE = 0.95IE

IE = Ic___
___
0.95

= __10__ ( Ic = 10 mA)
0.95

= 10.53 mA

Step 2 :-
Now , IE = IC + IB

IB = IE + IC

= 10.53 – 10

0.53mA

109