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Assignment 1

The document contains problems on determining properties of semiconductors like germanium and silicon including concentration of free electrons and holes, resistivity, and conductivity given various conditions like temperature, doping levels, and applied electric fields.

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sahil ahmed
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43 views

Assignment 1

The document contains problems on determining properties of semiconductors like germanium and silicon including concentration of free electrons and holes, resistivity, and conductivity given various conditions like temperature, doping levels, and applied electric fields.

Uploaded by

sahil ahmed
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Indian Institute of Information Technology, Nagpur

Department of Electronics and Communication


ECL-101: Electronic Devices and Circuits

Assignment 1: Problems on Semi-conductor

1. (a) Determine concentration of free electrons and holes in a sample of Germanium at 300 K
which has a concentration of donor atoms equal to 2 X 1014 atoms/cm3 and a concentration of
acceptor atoms equal to 3 X 1014 atoms/cm3, Is this p or n type Germanium?
(b) Repeat part a for equal donor and acceptor concentrations of 1015 atoms/cm3. Is this p or n
type Germanium?
(c) Repeat part a for donor concentration of 1016 atoms/cm3 and acceptor concentration 1014
atoms/cm3.
2. (a) Find the concentration of holes and of electrons in p type germanium at 300 K if the
conductivity is 100 (Ω-cm)-1.
(b) Repeat part a for n type silicon if the conductivity is 0.1 (Ω-cm)-1.
3. (a) Calculate resistivity of intrinsic Ge at 300 K.
(b) If a donor type impurity is added to the extent of 1 atom per 10 8 Ge atoms; determine its
resistivity.
4. (a) Calculate resistivity of intrinsic Si at 300 K.
(b) If a donor type impurity is added to the extent of 1 atom per 108 Si atoms; determine its
resistivity.
5. A sample of Ge is dopes to the extent of 1014 donor atoms/cm3 and 7 X 1013 acceptor atoms/cm3.
At the temperature of the sample the resistivity of intrinsic Ge is 60 Ω-cm. If the applied electric
field is 2 V/cm, find the total conduction current density.
6. The resistance of number 18 copper wire (diameter = 1.03 mm) is 6.51 Ω per 1000 ft. The
concentration of free electrons in copper is 8.4 X 1028 e-/m3. If the current is 2A find (a) drift
velocity (b) mobility (c) conductivity.

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