Digital Integrated Circuits Problem Sheet 2: OL OH M
Digital Integrated Circuits Problem Sheet 2: OL OH M
Integrated Circuits
Problem sheet ‐2
1.
Find VOL, VOH and VM for the given inverter. Assume
the nMOS transistors to be velocity saturated
MOSFETS. Also find VIL, VIH, NMH and NML.
Assume kn′=115μA/V2 ; γ=λ=0.
2.
Consider the circuit given . Assume VDD=3.3V, VTOn=0.75V,
VTOp=‐0.9V, |2ΦF|=0.58V, γ=0.071V‐0.5 for nMOS and
|2ΦF|=0.6V, γ=‐0.135V‐0.5 for pMOS. Plot roughly the VTC
of the circuit and fing VOH and VOL of the circuit.
3.
(i) Find VOL, VOH, VIL and VIH of the given inverter.
(ii) Find NMH and NML.
(iii) Compute the average power dissipation for
(a) Vin=0V (b) Vin=2.5V.
k’=115μAV‐2, λ=0.06V‐1, VTO=0.43V and VDSAT=0.63V.
Assume the transistor is a velocity saturated nMOST.
4.
In the given circuit nMOS transistors M1 and M2 are similar except
that M2 has a negative threshold voltage =‐0.4V. Assume Vin has a
swing of 0 to 2.5V.
(i) If Vin=0V what is Vout? In what mode M1 is operating?
(ii) Find out for Vin=2.5V. In what mode M2 is operating?
M1 → k’=115μAV‐2, VTO=0.43V and λ=γ=0. Assume both M1 and M2
are long channel MOSTs.
5. Consider a CMOS inverter with VDD=5V, |VTp|=VTn=1V, kn=kp=100μA/V2. Find VIL, VIH, VOL, VOH
and VM. Assume long channel MOSTs
6. Design a minimum size CMOS inverter of 0.25μm technology with switching threshold of 1.25V
7. Consider the following low swing driver consisting of NMOS devices M1 and M2 (0.25μ CMOS
technology). Assume an NWELL implementation. Assume that the inputs IN and IN′ have a 0V
to 2.5V swing and that IN = 0V when IN′= 2.5V and vice‐versa. Also assume that there is no
skew between IN and IN′ (i.e., the inverter delay to derive IN from IN is zero).
To what voltage is the bulk terminal of M2 connected?
What is the voltage swing on the output node as the inputs swing from 0V to 2.5V. Find the low
value and the high value.
Assume that the inputs IN and IN have zero rise and fall times. Assume a zero skew between
IN and IN. Determine the low to high propagation delay for charging the output node
measured from the 50% point of the input to the 50% point of the output. Assume that the total
load capacitance is 1pF, including the transistor parasitics.