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Transistor in Common Base (Continuation) and Common Emitter Configuration

The document discusses the common base and common emitter configurations of a transistor. In common base configuration, the emitter current IE increases rapidly with a small increase in the emitter-base voltage VBE. The collector current IC is independent of the collector voltage VCB. In common emitter configuration, the input is the base-emitter junction and the output is the collector-emitter junction. The ratio of the output current IC to the input current IB is known as the current amplification factor β.

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87 views

Transistor in Common Base (Continuation) and Common Emitter Configuration

The document discusses the common base and common emitter configurations of a transistor. In common base configuration, the emitter current IE increases rapidly with a small increase in the emitter-base voltage VBE. The collector current IC is independent of the collector voltage VCB. In common emitter configuration, the input is the base-emitter junction and the output is the collector-emitter junction. The ratio of the output current IC to the input current IB is known as the current amplification factor β.

Uploaded by

Bangla Tweaks
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Transistor in common

base (continuation) and


common emitter
configuration

Prepared by

Mou Mahmood

Lecturer, Department of CSE


Common base configuration of Transistor- input
characteristics
The input junction is emitter-base
junction and it is forward biased. So
the junction voltage, VBE is 0.7 V if
the transistor is made of silicon. So
the input current, IE increases rapidly
with a small voltage drop of 0.7 V at the
forward biased junction

On the other hand, the output junction


voltage is VCB and output current is IC
and the output junction is reverse
biased.
Common base configuration of Transistor- input
characteristics
● The emitter current IE increases rapidly with
small increase in emitter-base voltage, VBE . It
means that input resistance is very small
● The emitter current is almost independent of
collector-base voltage, VCB . It means emitter
current is almost independent of collector
voltage
● As a result, it can be concluded that collector
current is also independent of collector voltage
● The input resistance is very small as a very small
voltage, VBE is enough to produce a large flow
of emitter current, IE.
Common base configuration of Transistor- output
characteristics
● The collector current, IC varies with VCB
only at a very small voltage (<1 V) and
the transistor never operated in this
region
● When the voltage VCB is raised, the
collector current becomes stable and
constant. It means the current, IC is
independent of VCB and depends only
upon input current, IE. The transistor is
always operated in this region.
● A very large change in collector-base
voltage makes a very tiny change in
current, IC. That means the output
resistance is very high.
Common base configuration of Transistor- output
characteristics
● The region where the collector
current IC changes with the
collector-base voltage, VCB is called
saturation region
● When the collector current, IC is
constant and totally independent of
VCB , that region is called active
region
● And the region over the X-axis,
when there is no collector current, IC
is flowing but only a leakage current
ICBO flows, that region is called
cut-off region.
Common-Emitter Configuration

In a common emitter configuration, the emitter


is common and connected directly with both
base and collector.

Here the input junction is base-emitter junction


and output junction is collector-emitter
junction.

The input current is, IB and the input voltage is


VBE. The output current is IC and the output
voltage is VCE
Common-Emitter Configuration

1. Current amplification factor (β): In a


common emitter configuration the ratio of
output current to input current is called
current amplification factor, β.
Common-Emitter Configuration
Common-Emitter Configuration

2. Expression for total collector current, IC:


Common-Emitter Configuration-Problems

Problem 01: The collector leakage current in a transistor is 300µA in common emitter
configuration. If now the transistor is connected in common base arrangement what
will be the leakage current? β=120.
Problem 02: Find the 𝛂 rating of the transistor shown in the figure below. Hence
determine the value of IC using both 𝛂 and β rating of the transistor.
Common-Emitter Configuration-Problems

Problem 03: For the following circuit 𝛂= 0.96. Determine the collector-emitter voltage
and and base current.
Common-Emitter Configuration-Problems

Problem 04: Determine VCE and IC in the following circuit. The transistor is made of silicon
and β=150.
Common-Emitter Configuration-Input
Characteristics
● Keeping the VCE constant, the current IB
varies with the base-emitter junction
voltage VBE.
● As compared to common base
configuration arrangement, IB increases
less rapidly with VBE
● The characteristics resembles with
forward bias diode curve since the
base-emitter junction is forward biased
Common-Emitter Configuration-Input
Characteristics
● The collector current IC varies with VCE
between 0 to 1 volt. After this collector
current almost becomes constant and
independent of VCE

● This value of VCE upto which the


collector current IC changes is called
knee voltage. Transistors are always
operated in region above knee voltage

● For any value of voltage above knee


voltage collector current, IC is constant

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