Scribd
Upload
12 views

Ank 3

This document provides specifications for an N-P-N silicon epitaxial transistor. The transistor has a maximum power dissipation of 250 mW and maximum voltages of 300V between the collector and base and emitter, and 6V between the emitter and base. It has a typical current gain of 40 and gain bandwidth product of 50 MHz. The transistor is packaged in a SOT-23 case and is rated for operation from -55C to 150C.

Uploaded by

Ankit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
12 views

Ank 3

This document provides specifications for an N-P-N silicon epitaxial transistor. The transistor has a maximum power dissipation of 250 mW and maximum voltages of 300V between the collector and base and emitter, and 6V between the emitter and base. It has a typical current gain of 40 and gain bandwidth product of 50 MHz. The transistor is packaged in a SOT-23 case and is rated for operation from -55C to 150C.

Uploaded by

Ankit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

MBTA42

MBTA42
SILICON EPITAXIAL TRANSISTORS

N-P-N TRANSISTORS

1 3

ABSOLUTE MAXIMUM RATINGS


2
Descriptions Symbol Min. Typ. Max. Unit
Storage Temperature Tstg 55 150 C
Junction Temperature Tj 150 C
Maximum Power Dissipation (Ta=25 C ) Ptot 250 mW 1. BASE
Maximum Collector to Base Voltage VCBO 300 V 3. EMITTER
Maximum Collector to Emitter Voltage VCEO 300 V 2. COLLECTOR
Maximum Emitter to Base Voltage VEBO 6 V
Maximum Collector Current (d.c.) IC 500 mA Type SOT-23
Color Code Black
Marking MBTA42

ELECTRICAL CHARACTERISTICS (Ta 25 C)


Descriptions Test Conditions Symbol Min. Typ. Max. Unit
VCE 10V, I C 1mA h FE1 25
DC Current Gain VCE 10V, I C 10mA h FE2 40
VCE 10V, I C 30mA h FE3 40
Gain Bandwidth product VCE 20V, I C 10mA fT 50 MHz
Feedback Capacitance VCB 20V, I E 0, I e mA, f 1MHz C re PF
Collector Cut-off Current VCB 200V, I E 0mA ICBO 0.1 uA
Emitter Cut-off Current VEB 6V, I C 0 IEBO 0.1 uA
Collector Saturation Voltage I C 20mA, I E 2mA V CE(Sat) 0.5 V
Base Saturation Voltage I C 20mA, I B 2mA V BE(Sat ) 0.9 V
Collector to Base Breakdown Voltage I C 100uA, I E 0 BVCBO 300 V
Collector to Emitter Breakdown Voltage I C 1mA, I B 0 BVCEO 300 V
Emitter to Base Breakdown Voltage I C 0mA, I E 100uA BVEBO 6 V

Pulse Test 300 S, Duty Cycle. 2%

THERMAL CHARACTERISTICS
Descriptions Symbol Min. Typ. Max. Unit
Thermal Resistance at Tj P(Rth j-t +Rth t-s+Rth s-a) +Tamb R th j-a 500 K/W

P/N MBTA42
Marking 1D

TEL:(852)23413351 FAX:(852)27978275
WEB SITE:http://www.daiwahk.com
www.s-manuals.com

You might also like