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Continental Device India Limited: Silicon Epitaxial Transistor

1. The document provides specifications for the CMBT3905 silicon epitaxial transistor from Continental Device India Limited. It is a PNP transistor packaged in the SOT-23 formed SMD package. 2. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and power dissipation. It also has minimum current gain and transition frequency specifications. 3. The document provides detailed electrical characteristics including breakdown voltages, saturation voltages, current gain, output and input capacitances, and noise figure.

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Raymundo Moran Lopez
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96 views3 pages

Continental Device India Limited: Silicon Epitaxial Transistor

1. The document provides specifications for the CMBT3905 silicon epitaxial transistor from Continental Device India Limited. It is a PNP transistor packaged in the SOT-23 formed SMD package. 2. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and power dissipation. It also has minimum current gain and transition frequency specifications. 3. The document provides detailed electrical characteristics including breakdown voltages, saturation voltages, current gain, output and input capacitances, and noise figure.

Uploaded by

Raymundo Moran Lopez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SOT-23 Formed SMD Package CMBT3905

SILICON EPITAXIAL TRANSISTOR

P–N–P transistor

Marking PACKAGE OUTLINE DETAILS


CMBT3905 = 2Y ALL DIMENSIONS IN mm

Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS


Collector–base voltage (open emitter) –V CBO max. 40 V
Collector–emitter voltage (open base) –V CEO max. 40 V
Emitter–base voltage (open collector) –V EBO max. 5 V
Collector current (d.c.) –IC max. 200 mA
Total power dissipation up to Tamb = 60 °C Ptot max. 250 mW
D.C. current gain
–IC = 10 mA; –VCE = 1 V hFE 50 to 150
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 20 V fT min. 200 MHz

Continental Device India Limited Data Sheet Page 1 of 3


CMBT3905

RATINGS (at TA = 25°C unless otherwise specified)


Limiting values
Collector–base voltage (open emitter) –VCB0 max. 40 V
Collector–emitter voltage (open base) –VCE0 max. 40 V
Emitter–base voltage (open collector) –VEB0 max. 5 V
Collector current (d.c.) –IC max. 200 mA
Total power dissipation*
up to Tamb = 25 °C Ptot max. 250 mW
Storage temperature Tstg –55 to +150 °C

THERMAL CHARACTERISTICS
Tj = P(Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
from junction to ambient Rth j–a = 200 °C/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)


Tamb = 25 °C unless otherwise specified
Collector–emitter breakdown voltage
–IC = 1 mA; lB = 0 –V(BR)CE0 min. 40 V
Collector–base breakdown voltage
–IC = 10µA; IE = 0 –V(BR)CB0 min. 40 V
Emitter–base breakdown voltage
—IE = 10 µA; IC = 0 –V(BR)EB0 min. 5 V
Collector cut–off current
–VCE = 30 V; –VEB = 3 V –I CEX max. 50 nA
Base current
with reverse biased emitter junction –IBEX max. 50 nA
Output capacitance at f = 100 kHz
IE = 0; –VCB = 5 V Cc max. 4.5 pF
Input capacitance at f = 100 kHz
IC = 0; –VBE = 0,5 V Ce max. 10 pF

Saturation voltages
–IC = 10 mA; –IB = 1 mA –VCEsat max. 0,25 V

–IC = 50 mA; –IB = 5 mA –VCEsat max. 0,4 V

–IC = 10 mA; –IB = 1 mA –VBEsat min. 0,65 V


max. 0,85 V

–IC = 50 mA; –IB = 5 mA –VBEsat max. 0,95 V

D.C. current gain


–IC = 0,1 mA; –VCE = 1 V hFE min. 30
–IC = 1 mA; –VCE = 1 V hFE min. 40

–IC = 10 mA; –VCE = 1 V hFE min. 50


max. 150

Continental Device India Limited Data Sheet Page 2 of 3


CMBT3905

–IC = 50 mA; –VCE = 1 V hFE min. 30


–IC = 100 mA; –VCE = 1 V hFE min. 15
Transition frequency at f = 100 MHz
–IC = 10mA; –VCE = 20V fT min. 200 MHz
Noise figure at RS = 1 kΩ
–IC = 100µA; –VCE = 5 V
f = 10 Hz to 15,7 kHz F max. 4 dB

Small Signal Current Gain


–VCE = 10V; –IC = 1 mA; f = 1 KHz hfe min. 50
max. 200

Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).

CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

CDIL is a registered Trademark of


Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected] www.cdilsemi.com

Continental Device India Limited Data Sheet Page 3 of 3

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