7 Transistor Biasing and Small Signal Model
7 Transistor Biasing and Small Signal Model
If AC component is added in iB
iB = iBQ+ib = 40μ + 10μ.sinωt
iC = iCQ + ic = 4m + 1m.sinωt
VCE = VCEQ + vce = 6-2.sinωt
Δ𝑖 𝑖
AC current gain ℎ𝑓𝑒 = 𝐶 = 𝑐 = 100 (here)
Δ𝑖𝐵 𝑖𝑏
𝐼𝐶𝑄
DC current gain ℎ𝐹𝐸 = = 100
𝐼𝐵𝑄
In this case hfe = hFE, but they need not be equal always.
BJT amplifiers
• If Q-point is located too close to cutoff or
saturation region, the ac-component of iB can
drive the BJT into cutoff or saturation.
• Even if Q-point is located centrally and ac
amplitude is too large, then BJT may also go
into cutoff or saturation.
BJT Biasing
• Fix biasing:
𝑉𝐶𝐶 −𝑉𝐵𝐸
𝑖𝐵 =
𝑅𝐵
Since VBE = 0.7 V, and if VCC and
RB is fixed, then iB is also fixed.
Thererfore, it is called fix bias circuit.
BJT Biasing
• Voltage divider bias: Thevnin equivalent of voltage
divider bias is just another form of fix bias. Where,
• RB = R1R2 / (R1+R2)
• VBB = R2VCC / (R1+R2)
• In active region, iC = hfeiB
• VCE = -iCRC+VCC
= -hfe iB RC + VCC
𝑉𝐶𝐶 −𝑉𝐶𝐸
• 𝑖𝐵 =
ℎ𝑓𝑒 𝑅𝐶
BJT Biasing: Voltage divider bias
• For two transistors hfe can be different
• hfe can also change with temperature for same
transistor
• For slight temp change, Q-point may shift to
undesired location
• With increase in temperature, IC increases. iC
across CB junction will cause temp rise and this
will further cause ICO to rise and iC rise.
• This cumulative process is called thermal runaway
and can damage the transistor or can cause Q-
point to saturation.
BJT Biasing
• Self biasing : Emitter resistance RE will keep the
increase in iC , in control.
• RB = R1R2 / (R1+R2) and VBB = R2VCC / (R1+R2)
• Also VBB = iBRB+VBE+iERE
• VBB = iBRB+VBE+RE (iB +iC) = iBRB+VBE+RE (1+hfe)iB
𝑉𝐵𝐵 −𝑉𝐵𝐸
• 𝑖𝐵 =
𝑅𝐵 +(1+ℎ𝑓𝑒 )𝑅𝐸
• Base current is
dependent on hfe
• If ICO or hfe due to
temp. rise, : iC
But, hfe iB iC
BJT: Small signal AC model
• Given a BJT in active region, how AC
signal/component can be added to existing
operating (DC) conditions?
• Coupling capacitor
– blocks DC (Q-point not affected)
– It short circuits the AC component
• Superposition can be used for analysis
– When Vs=0, VCC ≠ 0 (DC case), Capacitor =open
– When Vs ≠ 0, VCC = 0, Capacitor = short circuited (AC
equivalent)
• rπ = ac base resistance
• ic= hfeib = hfevbe/rπ = gmvbe
• gm= transconcudctance
• hfe = β (current gain)
BJT: Small signal AC model
• 𝑟𝜋 = ℎ𝑓𝑒 𝑟𝑒
BJT: Small signal AC model
• For an npn-transistor in active region
𝑉𝐵𝐸 𝑉𝐵𝐸
𝑖𝑐 = 𝐼𝑠 (𝑒 𝑉𝑇 − 1) ≈ 𝐼𝑠 𝑒 𝑉𝑇
1 𝑉𝐵𝐸 𝑖𝐶
𝑉
𝑑𝑖𝑐 = (𝐼𝑠 𝑒 𝑇 )𝑑𝑉𝐵𝐸 = 𝑑𝑉𝐵𝐸
𝑉𝑇 𝑉𝑇
Now gm = diC/dVBE = iC/VT
Hence for BJT biased at iC = ICQ , we have
gm= ICQ /VT = ICQ /0.026
re = 1/gm = 0.026/ ICQ
And rπ = hfere = 0.026 hfe/ICQ
• Small signal model can be used for npn or pnp BJT
by using |ICQ| in place of ICQ
Example 9.2
• AC analysis of Common-Emitter amplifier