RJK0355DPA

Silicon N Channel Power MOS FET

Power Switching
REJ03G1649-0500
Rev.5.00
Aug 05, 2008

Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 8.2 mΩ typ. (at VGS = 10 V)
• Pb-free

Outline

RENESAS Package code: PWSN0008DA-A

(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8

4 1, 2, 3 Source
G 4 Gate
4 3 2 1 5, 6, 7, 8 Drain

S S S
1 2 3

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 30 A
Drain peak current ID(pulse)Note1 120 A
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAP Note 2 9 A
Avalanche energy EAR Note 2 8.1 mJ
Channel dissipation Pch Note3 25 W
Channel to case thermal resistance θch-c Note3 5 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

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RJK0355DPA

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ± 0.1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 8.2 10.7 mΩ ID = 15 A, VGS = 10 V Note4
resistance RDS(on) — 11.8 16.5 mΩ ID = 15 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 55 — S ID = 15 A, VDS = 10 V Note4
Input capacitance Ciss — 860 — pF VDS = 10 V
Output capacitance Coss — 165 — pF VGS = 0
Reverse transfer capacitance Crss — 53 — pF f = 1 MHz
Gate Resistance Rg — 4.2 — Ω
Total gate charge Qg — 6.3 — nC VDD = 10 V
Gate to source charge Qgs — 2.3 — nC VGS = 4.5 V
Gate to drain charge Qgd — 1.4 — nC ID = 30 A
Turn-on delay time td(on) — 6.9 — ns VGS = 10 V, ID = 15 A
Rise time tr — 4.1 — ns VDD ≅ 10 V
Turn-off delay time td(off) — 40.8 — ns RL = 0.66 Ω
Fall time tf — 5.6 — ns Rg = 4.7 Ω
Body–drain diode forward voltage VDF — 0.87 1.14 V IF = 30 A, VGS = 0 Note4
Body–drain diode reverse recovery trr — 20 — ns IF =30 A, VGS = 0
time diF/ dt = 100 A/ µs
Notes: 4. Pulse test

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

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RJK0355DPA

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

40 1000
Pch (W)

ID (A)
30 100 10
µs
10
0µ
1
Channel Dissipation

m s
s

Drain Current
20 10
PW = 10 ms

DC
Operation in

O
this area is

pe
10 1
limited by RDS(on)

ra
tio
n
Tc = 25°C
0.1 1 shot Pulse
0 50 100 150 200 0.1 1 10 100

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

20 20
4.5 V VDS = 10 V
10 V 3.2 V Pulse Test Pulse Test
16 16
ID (A)

ID (A)

12 3.0 V 12
Drain Current

Drain Current

8 8

2.8 V
4 4 25°C
Tc = 75°C
VGS = 2.6 V –25°C

0 2 4 6 8 10 0 1 2 3 4 5

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
100
RDS (on) (mΩ)
Drain to Source on State Resistance
VDS (on) (mV)

200
Drain to Source Saturation Voltage

Pulse Test Pulse Test

150 30

VGS = 4.5 V
100 10
ID = 10 A
10 V

50 5A 3

2A
1
0 4 8 12 16 20 1 3 10 30 100 300 1000

Gate to Source Voltage VGS (V) Drain Current ID (A)

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

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RJK0355DPA

Static Drain to Source on State Resistance Typical Capacitance vs.

vs. Temperature Drain to Source Voltage
RDS (on) (mΩ)
Static Drain to Source on State Resistance
50 10000
Pulse Test

3000
40

Capacitance C (pF)
1000
30 Ciss
ID = 2 A, 5 A, 10 A 300
20
VGS = 4.5 V 100 Coss

10
30 Crss
VGS = 0
10 V 2 A, 5 A, 10 A f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Reverse Drain Current vs.

Dynamic Input Characteristics Source to Drain Voltage
50 20 50
VDS (V)

VGS (V)

ID = 30 A VGS 10 V Pulse Test

Reverse Drain Current IDR (A)
40 16 40 5V
VDD = 25 V
10 V
Drain to Source Voltage

Gate to Source Voltage

30 12 30
VDS

20 8 20

VGS = 0, –5 V
10 4 10
VDD = 25 V
10 V
0 0
0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0

Gate Charge Qg (nc) Source to Drain Voltage VSD (V)

Maximum Avalanche Energy vs.

Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)

20
IAP = 9 A
VDD = 15 V
16
duty < 0.1 %
Rg ≥ 50 Ω
12

0
25 50 75 100 125 150

Channel Temperature Tch (°C)

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

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RJK0355DPA

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

3
Tc = 25°C

1
D=1

0.5
0.3 0.2

0.1
5 θch – c (t) = γ s (t) • θch – c
0.1 0.0
02 θch – c = 5.0°C/W, Tc = 25°C
0.
se

01 PW
l

0. D=
pu

PDM
T
t
ho

0.03
1s

PW
T

0.01
10 µ 100 µ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Avalanche Test Circuit Avalanche Waveform

VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin 50 Ω
15 V
VDD
0

Switching Time Test Circuit Switching Time Waveform

Vin Monitor Vout 90%

Monitor
D.U.T.
Rg RL Vin 10%

Vout 10% 10%

Vin VDS
10 V = 10 V
90% 90%

td(on) tr td(off) tf

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

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RJK0355DPA

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
WPAK − PWSN0008DA-A WPAKV 0.075g Unit: mm

0.5 ± 0.15
4.21Typ

5.1 ± 0.2 0.8Max 1.27Typ

3.9 ± 0.2

3.8 ± 0.2
+0.1
-0.2
+0.1
-0.3

5.9
6.1

0.04Min

0.7Typ

0.5 ± 0.15
0.635Max 1.27Typ 0.2Typ 0.4 ± 0.06
Stand-off

4.9 ± 0.1
0.05Max
0Min

(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.

Ordering Information
Part No. Quantity Shipping Container
RJK0355DPA-00-J0 2500 pcs Taping

REJ03G1649-0500 Rev.5.00 Aug 05, 2008

Page 6 of 6
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