Scribd
Upload
78 views

1.0A Power Rectifier: Package Dimensions Features

This document summarizes the specifications and features of the DS135 diffused junction type silicon diode. It is a plastic molded power rectifier diode with a peak reverse voltage of 100-400V and an average rectified current rating of 1.0A. The document provides the diode's absolute maximum ratings, electrical characteristics, package dimensions, and legal disclaimers.

Uploaded by

David
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
78 views

1.0A Power Rectifier: Package Dimensions Features

This document summarizes the specifications and features of the DS135 diffused junction type silicon diode. It is a plastic molded power rectifier diode with a peak reverse voltage of 100-400V and an average rectified current rating of 1.0A. The document provides the diode's absolute maximum ratings, electrical characteristics, package dimensions, and legal disclaimers.

Uploaded by

David
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

Ordering number:EN710D

DS135
Diffused Junction Type Silicon Diode

1.0A Power Rectifier

Features Package Dimensions


· Plastic molded type. unit:mm
· Peak reverse voltage : 100 to 400V. 1005
· Average rectified current : IO=1.0A.
[DS135]

C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions DS135E DS135D DS135C Unit
Peak Reverse Voltage VRM 100 200 400 V
Average Rectified Current IO Ta=60˚C → → 1.0 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle → → 50 A
Junction Temperature Tj → → 150 ˚C
Storage Temperature Tstg → → –40 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Forward Voltage VF IF=1.0A 1.0 V
Reverse Current IR VR:At each VRM 10 µA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters


TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53098HA (KT)/1129TA/N131KI, TS No.710-1/2
DS135

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.710-2/2

You might also like