VISHAY

BA679/BA679S
Vishay Semiconductors

RF PIN Diodes

Features
• Wide frequency range 10 MHz to 1 GHz

Applications
Current controlled HF resistance in adjustable
attenuators

94 9371
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box

Parts Table
Part Type differentiation Ordering code Remarks
BA679 VR = 30 V, Zr > 5 kΩ BA679-GS18 or BA679-GS08 Tape and Reel
BA679S VR = 30 V, Zr > 9 kΩ BA679S-GS18 or BA679S-GS08 Tape and Reel

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse voltage VR 30 V
Forward current IF 50 mA

Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction ambient on PC board RthJA 500 K/W
50 mm x 50 mm x 1.6 mm
Junction temperature Tj 125 °C
Storage temperature range Tstg - 55 to + 125 °C

Document Number 85529 www.vishay.com

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BA679/BA679S VISHAY
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF 1 V
Reverse current VR = 30 V IR 50 nA
Diode capacitance f = 100 MHz, VR = 0 CD 0.5 pF
Differential forward resistance f = 100 MHz, IF = 1.5 mA rf 50 Ω
Reverse impedance f = 100 MHz, VR = 0 BA679 zr 5 kΩ
BA679S zr 9 kΩ
Minority carrier lifetime IF = 10 mA, IR = 10 mA τ 4 µs

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

a - Typical Cross Modulation Distortion ( dB )

100 20

Π - Circuit with 10 dB Attenuation

IF - Forward Current ( mA )

0 V 0 = 40 dBmV
10
f 1 = 100 MHz unmodulated
Tamb = 25°C -20
1

-40
Scattering Limit
0.1
-60

0.01 -80
0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80
95 9735 V F - Forward Voltage ( V ) 95 9733 f 2 , modulated with 200 kHz, m = 100% (MHz)

Fig. 1 Forward Current vs. Forward Voltage Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f2

10000
r f - Differential Forward Resistance (Ω)

1000
ı

100

f > 20 MHz
Tj = 25 ° C
10

1
0.001 0.01 0.1 1 10
95 9734 I F - Forward Current ( mA )

Fig. 2 Differential Forward Resistance vs. Forward Current

www.vishay.com Document Number 85529

2 Rev. 1.5, 26-Apr-04
VISHAY
BA679/BA679S
Vishay Semiconductors

Package Dimensions in mm (Inches)

Cathode indification

(0.06 ± 0.004)
1.5 ± 0.1
0.47 max.
(0.02)
3.5 ± 0.2 (0.14 ± 0.008) Mounting Pad Layout
2.50 (0.098) max
1.25 (0.049) min

2 (0.079) min
ISO Method E
Glass case
Mini Melf / SOD 80
JEDEC DO 213 AA

5 (0.197) ref
96 12070

Document Number 85529 www.vishay.com

Rev. 1.5, 26-Apr-04 3
BA679/BA679S VISHAY
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com Document Number 85529

4 Rev. 1.5, 26-Apr-04