A Plasma Doping Process for

3D FinFET Source/ Drain

Extensions
JTG 2014
Cuiyang Wang*, Shan Tang, Harold Persing,
Bingxi Wood, Helen Maynard,
Siamak Salimian, and Adam Brand
[email protected]

Varian Semiconductor Equipment | Silicon Systems Group

Applied Materials External

Outline
A Plasma Doping Process for 3D FinFET Source/ Drain Extensions

1. Plasma Doping for 3D FinFETs

2. Metrology for FinFET Doping Characterization

3. Doping Responses and Fin conductance

4. Summary and Acknowledgements

2 JTG Meeting, 2014 Applied Materials External

3D FinFET SDE Doping Challenges
Title angle of implantation
 3D FinFET for device 20nm beyond <10 deg
Beamline:
 Key Challenges:
 Shadowing
► Conformal Doping
► No Fin erosion
► No residual defect
Deposition and
► Low leakage
Thermal Drive in
 Highly Conformal
 Not PR compatible
 Cap layer

X
Plasma Doping: X+
X+

 Good conformality 2
4
 PR compatible 1
3

PLAD implant mode offers a

simplified, photoresist compatible process
3 JTG Meeting, 2014 Applied Materials External
VIISta PLAD Advantages for Advanced Devices

• Production proven technology across Sidewall doping

memory, logic and CIS process spaces for advanced 3D
devices:
• Plasma Doping Advantages: FinFET’s, VNAND,
and CIS
 Pulsed DC bias allows for precision doping
 Independent control of RF plasma generation
and DC bias balances deposition and implant
Shallow doping
Sidewall to
doping
 Faraday dosimetry provides precision process
reduce contact3D
for advanced
tracking
resistance and
devices:
High Density passivate
FinFET’s, VNAND,
Low Energy surfaces
CIS
RF Plasma

High dose
implants to
modify material
properties:
workfunction,
etching rate, &
Pulsed DC Bias
conductivity.

All future devices are 3D

PLAD can modify properties of vertical sidewalls
4 JTG Meeting, 2014 Applied Materials External
Benefits and Challenges for PLAD FinFET Doping
 Various Process parameters:
1: DIRECT IMPLANT 2: DEPOSITION and
− Power, Pressure, gas mixture ratio
KNOCK-IN
− Energy, Dose, PW, Frequency
3: REFLECTED ION 4: SPUTTERING
IMPLANT

 Multiple Mechanisms:
X
− Direct implant
X+ − Deposition and knock in
X+
− Reflected implant
− Sputtering/Etching
2
4
1

3
 Wafer Results:
− Conformality
Si Si − Minimize fin erosion
Fin Fin
− Eliminate residual defects

Doping of Si Fin structures is a driven by multiple mechanisms and

competing effects

5 Ion Implant Technology, 2014 Applied Materials External

Outline
A Plasma Doping Process for 3D FinFET Source/ Drain Extensions

1. Plasma Doping for 3D FinFETs

2. Metrology for FinFET Doping Characterization

3. Doping Responses and Fin conductance

4. Summary and Acknowledgements

2 JTG Meeting, 2014 Applied Materials External

Dopant Characterization Metrology
1.5D SIMS EDS mapping/EDS line scans
1. Lower detection limit 1. 1% detection limit
2. Results can be quantified 2. Lateral resolution
3. Average over number of fins 3. Hard to quantify
4. No lateral resolution

A
B
C
D
E Fin resistor: active dopant

B D
C
E
A

Each metrology has its limitations and the characterization results

need to be interpreted carefully

JTG Meeting, 2014 Applied Materials External

Outline
A Plasma Doping Process for 3D FinFET Source/ Drain Extensions

1. Plasma Doping for 3D FinFETs

2. Metrology for FinFET Doping Characterization

3. Doping Responses and Fin conductance

4. Summary and Acknowledgements

2 JTG Meeting, 2014 Applied Materials External

 Process Flow and Structure of Samples

PLAD Implant
Approach

Start Wafer

PLAD Implant + Si

Passivation

SPM clean

Anneal
Applied Materials Maydan
Post DHF Center Fin Structure

Fin height: ~130nm

Fin width: ~50nm
Fin pitch: ~110nm

PLAD implant mode offers a simplified, photoresist compatible process

9 Ion Implant Technology, 2014 Applied Materials External

 Implant Approach: Energy and Dose Tuning of
Fin Doping 2D EDS
XTEM 1.5D SIMS B
B 1.E+21

SIMS As (atm/cm3)
1.E+20

D D

1.E+19
200 250 300 350 400 450
Depth (nm)

1.0E+15
Sidewall Dose

8.0E+14
A
(at/cm2)

B
- A: Low Energy, Low Dose 6.0E+14
C ~50% increase
- B: Low Energy, High Dose 4.0E+14 D
in Average
- C: High energy, Low Dose 2.0E+14 Sidewall Dose
- D: High Energy, High Dose A B C D
Fin height: ~130nm, Fin width: ~50nm, Fin pitch: ~110nm

Tunable Fin doping is demonstrated by energy and dose control

10 JTG Meeting, 2014 Applied Materials External
 Implant Approach: Plasma Process Parameter
Tuning of Fin Doping 2D EDS
1.5D SIMS DR1
XTEM

SIMS As (Atoms/cm3)
1E+21

1E+20

DR1

1E+19 DR3
200 300 400

Depth (nm)

DR3 1.3E+15
Sidewall Dose
(at/cm2)

1.1E+15
DR1
9.0E+14
DR2
- DR1: Dose Rate 1 7.0E+14 DR3 ~36% increase in
- DR2: Dose Rate 2 average sidewall
5.0E+14
- DR3: Dose Rate 3 DR1 DR2 DR3 Dose
Fin height: ~130nm, Fin width: ~50nm, Fin pitch: ~110nm

Fin doping can be further optimized by plasma parameter tuning

11 JTG Meeting, 2014 Applied Materials External

Implant Approach: EDS Verification of
Dopant into Fin Sidewall

Si Fin SiO2
100 5

Si or O composition (%)

As Composition (%)
80 4

60 3
Si Fin 40 2

20 1

0 0 O
1 2 3 4 5 6 7 8 9 Si
EDS Line Scan Site As

Fin height: ~130nm, Fin width: ~50nm, Fin pitch: ~110nm

EDS as-implanted line scan demonstrates As doping into fin sidewall

12 JTG Meeting, 2014 Applied Materials External

Outline
A Plasma Doping Process for 3D FinFET Source/ Drain Extensions

1. Plasma Doping for 3D FinFETs

2. Metrology for FinFET Doping Characterization

3. Doping Responses and Fin conductance

4. Summary and Acknowledgements

2 JTG Meeting, 2014 Applied Materials External

 Summary
 Plasma doping of Fin structures by an implant based approach
has been demonstrated

 The application of plasma doping into logic device technology is

rapidly accelerating

 Efforts to enhance fundamental understanding and to enable

predictive approaches are in progress

 As 3D transistor technology continues to be implemented, PLAD

will be required for doping and material property modification

14 JTG Meeting, 2014 Applied Materials External

 Acknowledgements
 Appreciation is extended to Alexander Pagdanganan, Martin
Hilkene, and Matthew Castle for providing the poly-silicon
deposition and process flows at the Maydan Center

 We would also like to thank Peter Ryan for his support of the
plasma doped sample preparation

15 JTG Meeting, 2014 Applied Materials External