Scribd
Upload
99 views2 pages

B.Tech Electronics Exam Paper 2013

This document contains 8 questions from a past exam on Electronic Devices and Circuits. The questions cover topics like: 1) Characteristics and operation of diodes, Zener diodes, and half/full wave rectifiers. 2) BJT amplification process, input/output characteristics, and biasing methods. 3) Operation of JFETs, MOSFETs, and their parameters like pinch-off voltage. 4) Small signal models of BJTs and JFETs using h-parameters and deriving expressions for gain, input/output resistances. 5) Operation of varactor diodes, negative resistance devices, and construction details of SCRs and

Uploaded by

Madhavarao K
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
99 views2 pages

B.Tech Electronics Exam Paper 2013

This document contains 8 questions from a past exam on Electronic Devices and Circuits. The questions cover topics like: 1) Characteristics and operation of diodes, Zener diodes, and half/full wave rectifiers. 2) BJT amplification process, input/output characteristics, and biasing methods. 3) Operation of JFETs, MOSFETs, and their parameters like pinch-off voltage. 4) Small signal models of BJTs and JFETs using h-parameters and deriving expressions for gain, input/output resistances. 5) Operation of varactor diodes, negative resistance devices, and construction details of SCRs and

Uploaded by

Madhavarao K
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

[Link] || [Link] || [Link] || [Link].

net

Code No: 09A30203


R09
JAWAHARLAL
AWAHARLAL NEHRU TECHNOLOGICAL
TECHNOLOGICAL UNIVERSITY, HYDERABAD
B. Tech. II Year I Semester Examinations, May/June-2013
Electronic Devices and Circuits
(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE, ICE)
Time: 3 hours Max. Marks: 75
Answer any five questions
All questions carry equal marks

M
---

1.a) Draw the V-I characteristics of a diode with zero cut-in voltage and equivalent

O
ȍ. Draw the load line if RL is also 100 ȍ.
resistance of 100 ȍ.
b) Draw the equivalent circuit of a diode circuit when a DC voltage to forward bias
the diode along with an ac signal is applied.

.C
c) Differentiate between normal PN junction diode and a Zener diode. [15]

2.a) Derive expressions for ripple factor, regulation and rectification efficiency of a

EW
half wave rectifier.
b)) Design an LC filter for a Full wave rectifier to give 9V output as DC voltage at
100 mA current. Assume ripple factor to be 2%.
c)) Compare the filtering characteristics of capacitance type, choke input type and
Ȇ-type
-type filters. [15]
N
3.a) Based on the currents flowing through a BJT illustrate the amplification process.
b)) Sketch the input and output characteristics of a BJT in CE configuration and
discuss how ȕ of the transistor can be determined form the characteristics.
LD

c) Compare CB, CC, and CE configurations. [15]

4.a) am
What is the need of biasing a BJT for amplifier application? List the deficiencies
of fixed bias and emitter feedback bi as methods and explain how they are
bias
overcome in voltage divider bias method.
R

b)) Define stability factors for a BJT with any biasing method. Suggest a method to
compensate for temperature variation eff
effects on operating point of a BJT circuit.
O

c)) What is thermal runaway? Discuss the causes for it. [15]

5.a)) Discuss the effect of VGS on drain current of a JFET based on its structure.
W

b) Define: Pinch-off voltage, mutual conductance (gm), dynamic drain resistance (rd)
and amplification factor (µ) for a JFET and establish a relation between them.
c) Explain the operation of a MOSFET in enhancement and depletion modes.
[15]
TU

6.a) What is the difference between approximate and accurate h-parameter models of a
BJT in CE configuration? Discuss the conditions applicable for each model.
b) Draw the h-parameter equivalent circuit of a generalized BJT amplifier and derive
expressions for Av, Ai, Ri and Ro. [15]
JN

7.a) Draw the circuit diagram, equivalent circuit of a JFET small signal amplifier in
CS configuration and derive expressions for Av, Ai, Ri and Ro. Make applicable
assumptions and comments.

[Link] || [Link]
[Link] || [Link] || [Link] || [Link]

b)) A 12 kkȍ load resistance is connected


ed to the output of a JFET CS amplifier. If RG,
RS and CS are given as 1Mȍ1Mȍ, 1 kȍ and 25 µF respectively and P,, rd of JFET are
1M
listed as 20 and 10 kk: respectively, find the output voltage
voltage for a sinusoidal input
of peak
ak 0.1 volts at 2 kHz frequency. [15]

8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain
its principle of operation.

M
b)) Name the device exhibiting negative re resistance
sistance region in its V-I characteristic.
With suitable diagram explain ththee operation of this device.
c) detailss of SCR and Schotky barrier diode.
Discuss the constructional detail [15]

O
---oo0oo---

.C
EW
N
LD
R
O
W
TU
JN

[Link] || [Link]

You might also like