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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the SavantIC Semiconductor 2SC5198 silicon NPN power transistor. It details the device's applications, ratings, characteristics, packaging and provides diagrams. The transistor is intended for power amplifier applications up to 70W and the document specifies its electrical parameters and classifications.

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Miguel Angel
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45 views5 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the SavantIC Semiconductor 2SC5198 silicon NPN power transistor. It details the device's applications, ratings, characteristics, packaging and provides diagrams. The transistor is intended for power amplifier applications up to 70W and the document specifies its electrical parameters and classifications.

Uploaded by

Miguel Angel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5198

DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1941

APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 140 V

VCEO Collector-emitter voltage Open base 140 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 10 A

IB Base current 1 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5198

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO Collector-emitter breakdown voltage IC=50mA; IB=0 140 V

VCEsat Collector-emitter saturation voltage IC=7 A;IB=0.7A 2.0 V

VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=140V ;IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=5A ; VCE=5V 35

fT Transition frequency IC=1A ; VCE=5V 30 MHz

COB Output capacitance IE=0; VCB=10V;f=1MHz 170 pF

hFE-1 classifications

R O

55-110 80-160

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5198

PACKAGE OUTLINE

Fig.2 Outline dimensions

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5198

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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