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I .Fy FFL: Silicon PNP Power Transistor

This document provides specifications for the Silicon PNP Power Transistor 2SA1941. It has low collector saturation voltage of -2.0V minimum at -7A collector current, good hFE linearity, and is complementary to the 2SC5198 transistor. It is recommended for power amplifier and high fidelity audio amplifier applications up to 70W. Key electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -2.0V maximum, and DC current gains of 55-160 typical at -1A collector current and 35 typical at -5A collector current.

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Miguel Angel
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129 views3 pages

I .Fy FFL: Silicon PNP Power Transistor

This document provides specifications for the Silicon PNP Power Transistor 2SA1941. It has low collector saturation voltage of -2.0V minimum at -7A collector current, good hFE linearity, and is complementary to the 2SC5198 transistor. It is recommended for power amplifier and high fidelity audio amplifier applications up to 70W. Key electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -2.0V maximum, and DC current gains of 55-160 typical at -1A collector current and 35 typical at -5A collector current.

Uploaded by

Miguel Angel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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<zy\£.uj J. , Una.

20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon PNP Power Transistor 2SA1941

DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @lc=- 7A
• Good Linearity of hFE
• Complement to Type 2SC51 98

APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
I
I \ •-< 3

PIN 1.BASE
3

2. COLLECTOR
3. EMITTER
TO-3PN package

W
amplifier output stage applications M
^ r!
jf
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL PARAMETER VALUE UNIT


I .fy f

I I
K ':

VCBO Collector-Base Voltage -140 V


I ffl
p
-*it*-J »iii*-'D
VCEO Collector-Emitter Voltage -140 V
-*• *--R
mm
Emitter-Base Voltage -5 V DIM MIN MAX
VEBO
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
Ic Collector Current-Continuous -10 A
D 0.90 1.10
F 1 90 2 10
F 3.40 3.60
IB Base Current-Continuous -1 A 3.10
G 2.90
H 3.20 3.40
Collector Power Dissipation J 0.595 0.605
PC @T.-25°r 100 W K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Tj Junction Temperature 150 °C q 4.90 J 5.10
R 3.35 3.45
S 1.995 2.005
Tstg Storage Temperature Range -55-150 •c u 5.90 >.1 \
Y I 9.90 1<>.1

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ot'going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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Silicon PNP Power Transistor 2SA1941

ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage l c =-50mA; IB= 0 -140 V

VcE(sat) Collector-Emitter Saturation Voltage lc= -7.0A; IB= -0.7A -2.0 V

VsE(on) Base-Emitter On Voltage lc=-5A;V CE =-5V -1.5 V

ICBO Collector Cutoff Current V CB =-140V; IE=0 -5 WA

IEBO Emitter Cutoff Current VEB= -5V; lc=0 -5 nA

hpE-1 DC Current Gain lc=-1A;V CE =-5V 55 160

hpE-2 DC Current Gain lc= -5A ; VCE= -5V 35

COB Output Capacitance l E =0;VcB=-10V;f te st= 1.0MHz 320 pF

ft Current-Gain— Bandwidth Product lc=-1A; VCE=-5V 30 MHz

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