AF4835P

P-Channel Enhancement Mode Power MOSFET

„ Features „ General Description

- Simple Drive Requirement The advanced power MOSFET provides the designer
- Low On-resistance with the best combination of fast switching,
- Fast Switching ruggedized device design, low on-resistance and
cost-effectiveness.

The SOP-8 package is universally preferred for all

commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
„ Product Summary converters.

BVDSS (V) RDS(ON) (mΩ) ID (A)

-30 20 -8

„ Pin Assignments „ Pin Descriptions

S 1 8 D Pin Name Description

S 2 7 D S Source
G Gate
S 3 6 D
D Drain
G 4 5 D

SOP-8

„ Ordering information

A X 4835P X X X

Feature PN Package Lead Free Packing

F :MOSFET S: SOP-8 Blank : Normal Blank : Tube or Bulk
L : Lead Free Package A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Nov 19, 2004
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 AF4835P
P-Channel Enhancement Mode Power MOSFET

„ Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
TA=25ºC -8
ID Continuous Drain Current (Note 1) A
TA=70ºC -6
IDM Pulsed Drain Current (Note 2) -50 A
Total Power Dissipation 2.5 W
PD TA=25ºC
Linear Derating Factor 0.02 W/ºC
TSTG Storage Temperature Range -55 to 150 ºC
TJ Operating Junction Temperature Range -55 to 150 ºC

„ Thermal Data
Symbol Parameter Maximum Units
Rthj-amb Thermal Resistance Junction-ambient (Note 1) Max. 50 ºC/W

„ Electrical Characteristics at TJ=25ºC unless otherwise specified

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
Breakdown Voltage Temperature Reference to 25oC,
∆BVDSS / ∆TJ - -0.037 - V/oC
Coefficient ID=-1mA
Static Drain-Source VGS=-10V, ID=-8A - - 20
RDS(ON) mΩ
On-Resistance (Note 3) VGS=-4.5V, ID=-5A - - 35
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-15V, ID=-8A - 20 - S
Drain-Source Leakage Current
VDS=-30V, VGS=0V - - -1
(TJ=25oC)
IDSS uA
Drain-Source Leakage Current
VDS=-24V, VGS=0V - - -25
(TJ=70oC)
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
Qg Total Gate Charge (Note 3) ID=-4.6A, - 36 -
Qgs Gate-Source Charge VDS=-15V, - 5.5 - nC
Qgd Gate-Drain (“Miller”) Charge VGS=-10V - 3.5 -
td(on) Turn-On Delay Time (Note 3) VDS=-15V, - 12 -
tr Rise Time ID=-1A, - 8 -
ns
td(off) Turn-Off Delay Time RG=6Ω, VGS=-10V - 75 -
tf Fall-Time RD=15Ω - 40 -
Ciss Input Capacitance VGS=0V, - 1530 -
Coss Output Capacitance VDS=-15V, - 900 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 280 -

„ Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Continuous Source Current
IS VD=VG=0V, VS=-1.2V - - -2.08 A
(Body Diode)
o
TJ=25 C, IS=-2.1A,
VSD Forward On Voltage (Note 3) - -0.75 -1.2 V
VGS=0V
2 o
Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
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 AF4835P
P-Channel Enhancement Mode Power MOSFET

„ Typical Performance Characteristics

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction
Temperature

Fig 5. Maximum Drain Current v.s. Case

Temperature Fig 6. Typical Power Dissipation

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 AF4835P
P-Channel Enhancement Mode Power MOSFET

„ Typical Performance Characteristics (Continued)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristic of Reverse Fig 12. Gate Threshold Voltage v.s. Junction
Diode Temperature

Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
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 AF4835P
P-Channel Enhancement Mode Power MOSFET

„ Typical Performance Characteristics (Continued)

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
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 AF4835P
P-Channel Enhancement Mode Power MOSFET

„ Marking Information
SOP-8L
( Top View )
8
Lot code:
Logo "X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
Part Number 4835 P "A~Z": 27~52
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004

~
Factory code

„ Package Information
Package Type: SOP-8L
H
E

VIEW "A"

D
0.015x45
7 (4X) 7 (4X)
A2

e B
A1

VIEW "A"
y
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Nom. Max. Min. Nom. Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1 0.10 - 0.25 0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075 0.008 0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
θ 0O - 8O 0O - 8O

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