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AP4501GSD
Pb Free Plating Product
Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET

D2
▼ Simple Drive Requirement D2 N-CH BVDSS 30V
D1
▼ Low On-resistance D1 RDS(ON) 27mΩ
▼ Fast Switching Characteristic ID 7A
G2 P-CH BVDSS -30V
S2
PDIP-8 G1
S1
RDS(ON) 49mΩ
Description ID -5A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, D1 D2
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
G2
S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
3
ID@TA=25℃ Continuous Drain Current 7 -5 A
3
ID@TA=70℃ Continuous Drain Current 5.8 -4.2 A
1
IDM Pulsed Drain Current 40 -30 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W

Data and specifications subject to change without notice 200504042

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AP4501GSD

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A - - 27 mΩ
VGS=4.5V, ID=5A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=7A - 12 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=7A - 9 13 nC
Qgs Gate-Source Charge VDS=24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC
2
td(on) Turn-on Delay Time VDS=15V - 6 - ns
tr Rise Time ID=1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 19 - ns
tf Fall Time RD=15Ω - 4 - ns
Ciss Input Capacitance VGS=0V - 645 800 pF
Coss Output Capacitance VDS=25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=7A, VGS=0V, - 16 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

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AP4501GSD
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A - - 49 mΩ
VGS=-4.5V, ID=-3A - - 75 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5.3A - 8 - S
IDSS Drain-Source Leakage Current ( Tj =25oC) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current ( Tj =70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
2
Qg Total Gate Charge ID=-5A - 9 15 nC
Qgs Gate-Source Charge VDS=-24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 10 - ns
tr Rise Time ID=-1A - 7 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 27 - ns
tf Fall Time RD=15Ω - 16 - ns
Ciss Input Capacitance VGS=0V - 460 730 pF
Coss Output Capacitance VDS=-25V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V, - 21 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.

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AP4501GSD
N-Channel
40 36

10V 10V
T A =25 o C 8.0V T A =150 o C 8.0V
6.0V 6.0V
5.0V

ID , Drain Current (A)

30
ID , Drain Current (A)

24
5.0V

20

12
V G =4. 0 V V G =4.0V
10

0 0
0 1 2 3 4 0 2 3 5
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2

I D =7A
I D =7A
V G = 10V
T A =25 ℃
Normalized RDS(ON)

70 1.4
RDS(ON) (mΩ )

40 0.8

10 0.2
2 5 8 11 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 3

2.5

1 2
VGS(th) (V)

T J =150 o C T J =25 o C
IS(A)

1.5

0.1 1

0.5

0.01
0
0 0.4 0.8 1.2
-50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o

C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP4501GSD
N-Channel
f=1.0MHz
12 1000

I D =7.0A C iss
VGS , Gate to Source Voltage (V)

9
V DS =16V
V DS =20V
V DS =24V
C oss

C (pF)
6 100
C rss

0 10
0 4 8 12 16 1 7 13 19 25 31

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty Factor = 0.5

Normalized Thermal Response (Rthja)

100us
0.2
10

0.1
0.1
1ms
0.05
ID (A)

1 10ms 0.02

100ms 0.01

Single Pulse PDM

0.01
1s t
0.1 10s T

T A =25 o C DC Duty Factor = t/T

Peak Tj = PDM x Rthja + Ta
Single Pulse Rthja =90o C/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

4.5V
QGS QGD
10%
VGS

td(on) tr td(off)tf Q
Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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AP4501GSD
P-Channel
40 36

-10V
-10V
T A =25 o C T A =150 C
o -8.0V
-8.0V
-6.0V
-6.0V
30
-ID , Drain Current (A)

-ID , Drain Current (A)

24

-5.0V
-5.0V
20

12

10 V G = - 4. 0 V
V G = - 4. 0 V

0 0
0 1 2 3 4 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

120 1.8

I D =-5.0A
T A =25 ℃ 1.6
I D =-5.0A
V G = -10V
Normalized R DS(ON)

90 1.4
RDS(ON) (mΩ )

1.2

60 1

0.8

30 0.6
3 5 7 9 11 -50 0 50 100 150
o
-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 3

2.5

1 2
-VGS(th) (V)

T j =150 o C T j =25 o C
-IS(A)

1.5

0.1 1

0.5

0.01
0
0.1 0.4 0.7 1 1.3
-50 0 50 100 150
o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP4501GSD
P-Channel
f=1.0MHz
12 1000

I D =-5.0A
10
V DS =-24V C iss
-VGS , Gate to Source Voltage (V)

8
C oss

C (pF)
C rss
6 100

0 10
0 4 8 12 16 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty Factor = 0.5

Normalized Thermal Response (Rthja)

100us 0.2
10

1ms 0.1
0.1

0.05
-ID (A)

10ms
1 0.02

100ms 0.01

PDM
0.01 Single Pulse
t
1s
0.1 T
o 10s
T A =25 C
DC Duty Factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

VDS VG
90%
QG
-4.5V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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