4501GSD-Advanced Power Electronics
4501GSD-Advanced Power Electronics
kr
AP4501GSD
Pb Free Plating Product
Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
D2
▼ Simple Drive Requirement D2 N-CH BVDSS 30V
D1
▼ Low On-resistance D1 RDS(ON) 27mΩ
▼ Fast Switching Characteristic ID 7A
G2 P-CH BVDSS -30V
S2
PDIP-8 G1
S1
RDS(ON) 49mΩ
Description ID -5A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, D1 D2
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
G2
S1 S2
Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W
AP4501GSD
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=7A, VGS=0V, - 16 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
AP4501GSD
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A - - 49 mΩ
VGS=-4.5V, ID=-3A - - 75 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5.3A - 8 - S
IDSS Drain-Source Leakage Current ( Tj =25oC) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current ( Tj =70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
2
Qg Total Gate Charge ID=-5A - 9 15 nC
Qgs Gate-Source Charge VDS=-24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 10 - ns
tr Rise Time ID=-1A - 7 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 27 - ns
tf Fall Time RD=15Ω - 16 - ns
Ciss Input Capacitance VGS=0V - 460 730 pF
Coss Output Capacitance VDS=-25V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V, - 21 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
AP4501GSD
N-Channel
40 36
10V 10V
T A =25 o C 8.0V T A =150 o C 8.0V
6.0V 6.0V
5.0V
24
5.0V
20
12
V G =4. 0 V V G =4.0V
10
0 0
0 1 2 3 4 0 2 3 5
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)
100 2
I D =7A
I D =7A
V G = 10V
T A =25 ℃
Normalized RDS(ON)
70 1.4
RDS(ON) (mΩ )
40 0.8
10 0.2
2 5 8 11 -50 0 50 100 150
2.5
1 2
VGS(th) (V)
T J =150 o C T J =25 o C
IS(A)
1.5
0.1 1
0.5
0.01
0
0 0.4 0.8 1.2
-50 0 50 100 150
AP4501GSD
N-Channel
f=1.0MHz
12 1000
I D =7.0A C iss
VGS , Gate to Source Voltage (V)
9
V DS =16V
V DS =20V
V DS =24V
C oss
C (pF)
6 100
C rss
0 10
0 4 8 12 16 1 7 13 19 25 31
100 1
100us
0.2
10
0.1
0.1
1ms
0.05
ID (A)
1 10ms 0.02
100ms 0.01
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
td(on) tr td(off)tf Q
Charge
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP4501GSD
P-Channel
40 36
-10V
-10V
T A =25 o C T A =150 C
o -8.0V
-8.0V
-6.0V
-6.0V
30
-ID , Drain Current (A)
-5.0V
-5.0V
20
12
10 V G = - 4. 0 V
V G = - 4. 0 V
0 0
0 1 2 3 4 0 1 2 3 4 5
120 1.8
I D =-5.0A
T A =25 ℃ 1.6
I D =-5.0A
V G = -10V
Normalized R DS(ON)
90 1.4
RDS(ON) (mΩ )
1.2
60 1
0.8
30 0.6
3 5 7 9 11 -50 0 50 100 150
o
-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)
2.5
1 2
-VGS(th) (V)
T j =150 o C T j =25 o C
-IS(A)
1.5
0.1 1
0.5
0.01
0
0.1 0.4 0.7 1 1.3
-50 0 50 100 150
o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C )
AP4501GSD
P-Channel
f=1.0MHz
12 1000
I D =-5.0A
10
V DS =-24V C iss
-VGS , Gate to Source Voltage (V)
8
C oss
C (pF)
C rss
6 100
0 10
0 4 8 12 16 1 5 9 13 17 21 25 29
100 1
100us 0.2
10
1ms 0.1
0.1
0.05
-ID (A)
10ms
1 0.02
100ms 0.01
PDM
0.01 Single Pulse
t
1s
0.1 T
o 10s
T A =25 C
DC Duty Factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
VDS VG
90%
QG
-4.5V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform