CS45-08io1

Thyristor VRRM = 800 V

I TAV = 45 A
VT = 1.37 V

Single Thyristor

Part number

CS45-08io1

Backside: anode

2 1

Features / Advantages: Applications: Package: TO-247

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline
● Planar passivated chip ● Softstart AC motor control ● RoHS compliant
● Long-term stability ● DC Motor control ● Epoxy meets UL 94V-0
● Power converter
● AC power control
● Lighting and temperature control

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202e

© 2019 IXYS all rights reserved

 CS45-08io1

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 900 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 V
I R/D reverse current, drain current VR/D = 800 V TVJ = 25°C 50 µA
VR/D = 800 V TVJ = 125°C 3 mA
VT forward voltage drop IT = 45 A TVJ = 25°C 1.36 V
IT = 90 A 1.73 V
IT = 45 A TVJ = 125 °C 1.37 V
IT = 90 A 1.85 V
I TAV average forward current TC = 110 °C T VJ = 150 °C 45 A
I T(RMS) RMS forward current 180° sine 71 A
VT0 threshold voltage TVJ = 150 °C 0.88 V
for power loss calculation only
rT slope resistance 11 mΩ
R thJC thermal resistance junction to case 0.4 K/W
RthCH thermal resistance case to heatsink 0.3 K/W
Ptot total power dissipation TC = 25°C 310 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 440 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 970 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 940 A²s
CJ junction capacitance VR = 230 V f = 1 MHz TVJ = 25°C 29 pF
PGM max. gate power dissipation t P = 30 µs T C = 150 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 135 A 150 A/µs
t P = 200 µs; di G /dt = 0.3 A/µs;
IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 45 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 125°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 V
TVJ = -40 °C 1.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 80 mA
TVJ = -40 °C 200 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 125°C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 µs TVJ = 25 °C 150 mA
IG = 0.3 A; di G /dt = 0.3 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.3 A; di G /dt = 0.3 A/µs
tq turn-off time VR = 100 V; I T = 45A; V = ⅔ VDRM TVJ =125 °C 150 µs
di/dt = 15 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202e

© 2019 IXYS all rights reserved

 CS45-08io1

Package TO-247 Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 70 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 6 g
MD mounting torque 0.8 1.2 Nm
FC mounting force with clip 20 120 N

Product Marking

Logo IXYS
Part Number XXXXXXXXX
Date Code yywwZ
1234
Lot#

Location

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard CS45-08io1 CS45-08io1 Tube 30 467677

Similar Part Package Voltage class

CS45-12io1 TO-247AD (3) 1200
CS45-16io1 TO-247AD (3) 1600
CS45-16io1R ISOPLUS247 (3) 1600
CLA50E1200HB TO-247AD (3) 1200

Equivalent Circuits for Simulation * on die level T VJ = 150°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.88 V

R0 max slope resistance * 8.5 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202e

© 2019 IXYS all rights reserved

 CS45-08io1

Outlines TO-247
A D2
E A2 ØP Ø P1

S Sym. Inches Millimeter

Q
min. max. min. max.
A 0.185 0.209 4.70 5.30
D1 A1 0.087 0.102 2.21 2.59
D A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
2x E2
E 0.610 0.640 15.48 16.24
4 E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
1 2 3 L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
L1 E1 ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
L b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
2x b2
3x b
C D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
b4 A1
E1 0.530 - 13.45 -
2x e Ø P1 - 0.29 - 7.39

2 1

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202e

© 2019 IXYS all rights reserved

 CS45-08io1

Thyristor
100 450 10000
50 Hz, 80% VRRM VR = 0 V

80 400

TVJ = 45°C
60 350 2
IT It TVJ = 45°C
ITSM 1000

[A] 40 300 [A2s]

[A] TVJ = 125°C
125°C
20 250
150°C TVJ = 125°C

TVJ = 25°C
0 200 100
0.5 1.0 1.5 2.0 0.01 0.1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
2
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms)

10 1000 80
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
dc =
3: IGT, TVJ = -40°C
1
60 0.5
6 0.4
100 0.33
3 5
VG 2 tgd typ. Limit IT(AV)M 0.17
0.08
1 1 40
[V] [µs] [A]
4
10
TVJ = 125°C
20
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
0.1 1 0
1 10 100 1000 10000 10 100 1000 0 25 50 75 100 125 150 175
IG [mA] IG [mA] TC [°C]
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current
at case temperature

dc =
80 1 0.4
0.5
RthHA
0.4
0.33 0.6
60 0.8 0.3
0.17
P(AV) 0.08 1.0
2.0 ZthJC
4.0
40 8.0 0.2 Rthi [K/W] ti [s]
[W] [K/W]
0.044 0.011
0.039 0.0001
20 0.1
0.047 0.02
0.09 0.4
0.18 0.12
0 0.0
0 20 40 0 50 100 150 100 101 102 103 104
IT(AV) [A] Tamb [°C] t [ms]

Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case
Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202e

© 2019 IXYS all rights reserved