30th International Conference on Lightning Protection - ICLP 2010

(Cagliari, Italy - September 13th -17th, 2010)

DEVELOPMENT OF SNO2 BASED VARISTORS –ELECTRICAL

BEHAVIOR AND PULSE DEGRADATION COMPARATIVELY
TO ZNO VARISTORS
W. Bassi M. A. Ramírez, P. R. Bueno, E. Longo and J. A. Varela
University of São Paulo (USP) São Paulo State Univerity (Unesp)
Brazil Brazil
[email protected] [email protected]

ABSTRACT 2 DEVELOPMENT
This work presents the most relevant aspects of the SnO2
Several samples of both SnO2 and ZnO based varistors
based varistors technology and a comparative study of its
non linear behavior in relation to ZnO (modified Matsuoka were prepared according reported chemical composition
system) varistors. Electrical performance at low and high and proper sintering processes [1-2].
impulse currents is presented. The SnO2 system had shown In order to illustrate the major microstructural
better performance in important parameters when differences between both varistor systems Fig. 1 shows
compared to SnO2 system such as higher non linear the electronic microscopy images on the samples using
coefficients in the entire range of measured currents and atomic force microscopy technique (AFM). The SnO2
much higher electrical breakdown field. It was also structure is revealed as much more homogenous and
evaluated the degradation both technologies of varistors simpler than the ZnO varistor.
subjected to lightning current pulses (8/20 µs) resulting a
more severe degradation in the ZnO varistors. The
improved behavior of the SnO2 system forms the basis to a
forthcoming design of surge arresters and surge protective
devices based on such technology.
Index Terms—varistors, protection, technology, ZnO,
SnO2, energy, degradation, surge arresters.

1 INTRODUCTION
Varistors are fine ceramics that present nonlinear
voltage-current characteristics and find wide range of
applications in electrical apparatus and electronic circuits (a) (b)
as over-voltage and surge absorbers and are often used Figure 1. Atomic force microscopy of
for suppression switching or lightning surges. a) ZnO based varistor and b) SnO2 based varistor.
The most studied varistor system and which is
currently used on commercial level is the ZnO-based The encapsulation and electrical insulation of the
system initially developed by Matsuoka et al. [1]. external surface of the ceramic disk is very important,
However, Pianaro et al. [2] have developed a SnO2 based since the selected material might influence the electrical
system which is of great interest and has some response of the final device. In order to avoid or
advantages compared to the ZnO-based system. These minimize electrical insulation failures, polyester resin
advantages are to be closely related to the SnO2 simpler resistant to high temperatures was used after welding the
microstructure, with a low concentration of additives terminals and proper rinsing of disks.
necessary to attain electrical non-linearity. Another
advantage of SnO2 based varistor system is regarded to
the high refractivity of the oxides used which minimizes 2.1 Electrical characterization
losses due to evaporation allied to a high thermal
The electrical parameters, in Table I, that determine
conductivity which is almost the double of that of the
the varistor behavior were obtained from I–V plots: the
value found in ZnO [4].
electrical breakdown field (Eb), breakdown voltage (Vb)
Finally, SnO2 varistors present excellent mechanical
the nonlinearity coefficient calculated in different regions
properties [5]. All of these advantages justify also an
of the curves correspondent to several current densities
preliminary study of the degradation with lightning
(αi), the leakage current (Il) and grain resistivity (ρ).
pulses comparing the results to the traditional ZnO based
technology already studied in the literature [6-10].

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 Table I: Electrical parameters of SnO2 and ZnO varistors Four samples of both systems were degraded by
applying a series of lightning current pulses (8/20). The
Eb Vb Il α1 α2 α3 α4 ρg capacity to absorb the total energy is usually expressed
(V/cm) (V) (µA) (Ω.cm)
per volume unit (J.cm-3) as indicated in Table II. For each
SnO2 5400 540 1.0 65 25 12 11 5.0 sample a certain number of pulses were applied until the
ZnO 2600 377 1.3 56 11 5 5 0.9 fail.

Table I: Parameters of SnO2 and ZnO varistor systems

Fig. 2 and Fig. 3 show the obtained I-V curves of both before and after artificial degradation process
ZnO and SnO2 varistor based technologies.
Total Eb Il α
Energy density (V/cm) (µA)
(J/cm3)
ZnO before - 2945 1.0 68
ZnO after 5560 54 2620 1
SnO2 before - 4720 1.2 75
SnO2 after 13800 2590 235 4

As shown in Figure 4, the current density (mA/cm-2)

versus electric field intensity (V/cm) revealed, in the ZnO
system, the change from a semiconductor with highly
non-ohmic characteristics to an essentially conducting
state.

Figure 2. I–V characteristics for the SnO2 system.

(a)

Figure 3. I–V characteristics for the ZnO system.

2.2 Artificial degradation

The stability of varistors against degradation is a
subject of research of great importance due reliability and
real implementation of protective devices using these
components. The degradation phenomena occur due to
stresses promoted by alternating current, direct current (b)
and transient overvoltages leading to changes in both Figure 4. J-E plot before and after the artificial degradation
nonlinear coefficient and leakage current. The process (a) ZnO-based varistors. (b) Varistors of the SnO2
degradation of ZnO and SnO2 varistors subjected to system.
lightning 8/20 µs current pulses is preliminarily analyzed.

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 Figure 5 shows electronic microscopic images of both 4 CONCLUSIONS
varistor systems. In Figure 5(a) and Figure 5(b) it can be
This paper presents a compared electrical behavior of a
seen the micro structural images of ZnO and SnO2
new proposed technology of SnO2 based varistors and the
respectively before the degradation process. It was
consolidated ZnO based varistor.
estimated that about 85% of the barriers in SnO2 varistors
In general, the SnO2 technology presents excellent
are active, whereas only the 35% were active in the ZnO
features for processing and feasibility of the varistors:
based system. In Figure 5(c) and Figure 5(d) the images
fewer amounts of chemical components and much more
are from the same materials after the degradation process.
regular resulting microstructure.
There is a considerable reduction of effective barriers and
The fact of the SnO2 system posses a very high number
reduction of the average grain sizes in the ZnO system.
of electrically active interfaces is of great technological
No significant modification is observed for the SnO2
interest because it allows the series fabrication of varistor
system.
disks or blocks with the same voltage breakdown (Vb),
but with smaller dimensions than the commercial ZnO-
a b based varistors. This will lead to the design of more
versatile, more efficient, lighter, and cheaper surge
protective devices.
The SnO2 varistors also present higher thermal
conductivity resulting in much more energy handling
capability. This feature was observed on an artificial
degradation process performed with application of
lightning impulse currents.
According to [11] five countries in the world (China,
Indonesia, Peru, Bolivia and Brazil) posses about 90% of
c d mining and smelting production of tin worldwide.
In the current stage, a semi-industrial plant is being
developed aiming the production of bloc varistors.

5 REFERENCES

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Figure 5. Atomic force microscopy using electrostatic force
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mode (EFM). a,b) ZnO and SnO2 based varistors respectively
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