1N5059, 1N5060, 1N5061, 1N5062

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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed axial-leaded glass
envelope
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Material categorization:
for definitions of compliance please see
949539 www.vishay.com/doc?99912

APPLICATIONS
DESIGN SUPPORT TOOLS click logo to get started
• Rectification diode, general purpose

Models
Available 

MECHANICAL DATA 

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750, 
method 2026 
Polarity: color band denotes cathode end 
Mounting position: any 

Weight: approx. 369 mg

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
1N5062 1N5062TR 5000 per 10" tape and reel 25 000
1N5062 1N5062TAP 5000 per ammopack 25 000

PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5059 VR = 200 V; IF(AV) = 2 A SOD-57
1N5060 VR = 400 V; IF(AV) = 2 A SOD-57
1N5061 VR = 600 V; IF(AV) = 2 A SOD-57
1N5062 VR = 800 V; IF(AV) = 2 A SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
1N5059 VR = VRRM 200 V
1N5060 VR = VRRM 400 V
Reverse voltage = repetitive peak reverse voltage See electrical characteristics
1N5061 VR = VRRM 600 V
1N5062 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
TthJA = 45 K/W, Tamb = 50 °C IF(AV) 2 A
Average forward current
TthJA = 100 K/W, Tamb = 75 °C IF(AV) 0.8 A
Pulse energy in avalanche mode, non repetitive
I(BR)R = 1 A, inductive load ER 20 mJ
(inductive load switch off)
Junction and storage temperature range Tj = Tstg -55 to +175 °C

Rev. 1.7, 20-Feb-18 1 Document Number: 86000

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Lead length l = 10 mm, TL = constant RthJA 45 K/W
Junction ambient
On PC board with spacing 25 mm RthJA 100 K/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT
IF = 1 A VF - - 1 V
Forward voltage
IF = 2.5 A VF - - 1.15 V
VR = VRRM IR - - 1 μA
Reverse current VR = VRRM, Tj = 100 °C IR - - 10 μA
VR = VRRM, Tj = 150 °C IR - - 100 μA
1N5059 V(BR)R 225 - 1600 V
1N5060 V(BR)R 450 - 1600 V
Breakdown voltage IR = 100 μA
1N5061 V(BR)R 650 - 1600 V
1N5062 V(BR)R 900 - 1600 V
Diode capacitance VR = 0 V, f = 1 MHz CD - 40 - pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 μs

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

200 3.0
PR - Reverse Power Dissipation ( mW )

I FAV - Average Forward Current (A)

V R = VRRM V R = VRRM
2.5 half sinewave
160 R thJA =
1N5062
45 K/W 2.0 R thJA = 45 K/W
l =10 mm
120 100 K/W
1N5061 1.5
160 K/W
80
1N5060 1.0

40 1N5059 RthJA = 100 K/W

0.5
PCB: d = 25 mm

0 0.0
25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
15764 Tj - Junction Temperature ( °C ) 15763_1

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

1000 100
V R = VRRM
Tj = 175 °C
I R - Reverse Current ( µA )

10
IF - Forward Current ( A )

100
Tj = 25°C
1
10
0.1

1
0.01

0.1 0.001
25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
15765 Tj - Junction Temperature ( °C ) 15762 V F - Forward Voltage ( V )
Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage

Rev. 1.7, 20-Feb-18 2 Document Number: 86000

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
50
f =1 MHz
C D - Diode Capacitance ( pF )

40

30

20

10

0
0.1 1 10 100
15766 V R - Reverse Voltage ( V )
Fig. 5 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

0.82 (0.032) max.

3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

20543

Rev. 1.7, 20-Feb-18 3 Document Number: 86000

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000