PD -9.

1276C

IRFZ34N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 0.040Ω
l Fast Switching G
l Ease of Paralleling
Description ID = 29A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 29
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current  100
PD @TC = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 65 mJ
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 2.2
RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
RθJA Junction-to-Ambient –––– –––– 62

8/25/97
IRFZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 16A„
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, I D = 250µA
gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 34 ID = 16A
Q gs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13 „
t d(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V
tr Rise Time ––– 49 ––– I D = 16A
ns
t d(off) Turn-Off Delay Time ––– 31 ––– RG = 18Ω
tf Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 700 ––– VGS = 0V

Coss Output Capacitance ––– 240 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 29
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 100

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 16A, V GS = 0V „

trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ I SD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C

‚ VDD = 25V, starting TJ = 25°C, L = 410µH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 16A. (See Figure 12)
 IRFZ34N

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rc e C u rre n t (A )

I , D ra in -to -S o u rce C u rre n t (A )

6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTT OM 4.5V BOTT OM 4.5V

10 10
4.5V
4.5V

1 1
D

D
20 µ s PU LSE W ID TH 20 µs PU L SE W ID TH
TC = 25 °C T C = 175 °C
0.1 A 0.1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.4
I D = 26 A
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
I D , D r ain- to-S ourc e C u rre nt (A )

2.0
TJ = 2 5 °C

TJ = 1 7 5 °C 1.6
(N o rm a lize d )

10 1.2

0.8

0.4

VD S = 2 5 V
2 0 µ s PU L SE W ID TH VG S = 1 0V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRFZ34N

1200 20
V GS = 0 V, f = 1M H z I D = 1 6A
C is s = C g s + C gd , Cds SH OR TED V DS = 4 4V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rs s = C gd V DS = 2 8V
1000
C is s C o ss = C ds + C gd 16
C , C a p a c ita n c e (p F )

800
C o ss 12

600

8
400
C rss
4
200

FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 10 20 30 40
V D S , D rain-to-S ource Voltage (V ) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
IS D , R e ve rs e D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

100 100
10 µs
TJ = 17 5°C

TJ = 2 5°C 1 00µs
10 10

1m s

T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFZ34N

30 RD
VDS

25 VGS
D.U.T.
RG
I D , Drain Current (A)

+
20 - VDD

10 V
15 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

10
Fig 10a. Switching Time Test Circuit

5 VDS
90%

0
25 50 75 100 125 150 175
T C , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
(Z thJC )

D = 0.50
1
Thermal Response

0.20

0.10

0.05 P DM
0.1 0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t1

t2

Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFZ34N

L 140
ID

E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
VDS
TOP 6 .5A
D.U.T. 120 11A
BO TTOM 16 A
RG +
V 100
- DD

10 V IAS 80
tp
0.01Ω

60

Fig 12a. Unclamped Inductive Test Circuit

40

20

V D D = 2 5V
0 A
V(BR)DSS 25 50 75 100 125 150 175

tp Starting TJ , Junction T emperature (°C)

VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFZ34N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRFZ34N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B -
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A - 1.32 (.052)
1.22 (.048)

6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LE AD ASSIG NM EN T S
MIN 1 - GATE
1 2 3 2 - DR AIN
3 - SOU RC E
4 - DR AIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OT ES:
1 D IM EN SION IN G & TOLE RA NC ING PE R AN SI Y14.5M , 1982. 3 O UT LIN E C ON FO RM S TO JED EC OUT LIN E T O-220-AB.
2 C ON TR OLLIN G D IM EN SION : INC H 4 HE ATS IN K & LEAD M EASU RE ME NT S DO N OT IN C LU D E BU RR S.

Part Marking Information

TO-220AB
E XA MPLE : T HIS IS A N IRF 1010
W ITH AS SE MB LY A
LO T CO DE 9B1M IN TE RN AT IONA L P AR T N UMB E R
RE C TIF IER
IRF 1010
LOGO 9246
9B 1M DA TE COD E
A SS E MBLY
(Y YW W )
LOT COD E
YY = YE A R
W W = W EE K

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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