The State-of-the-Art of Power Electronics in Japan: Hirofumi Akagi
The State-of-the-Art of Power Electronics in Japan: Hirofumi Akagi
Abstract— Since the late 1950’s, power electronics has been II describes the present status and future trends of power
developing by leaps and bounds without saturation to become semiconductor devices in Japan. Section III presents static
the key technology essential to modern society and human life as power converters, focusing on pulse-width-modulation (PWM)
well as to electrical engineering. This paper mainly focuses on the
state-of-the-art of power electronics technology and its medium inverters, which are classified according to their applications.
to high-power applications because the author cannot survey Section IV describes a 450-kHz 4-kW voltage-source series-
the whole spectrum of power electronics ranging from a 5-W resonant inverter and its specific application for dental casting
switching regulator to a 2.8-GW high-voltage dc transmission machines. Section V shows the present status of the steel
system now under construction in Japan. This paper also presents industry, which has already introduced large-capacity high-
prospects and directions of power electronics in the 21st century,
including the personal views and expectations of the author. performance vector-controlled induction/synchronous motors
into hot- and cold-strip-mill drives. Section VI is focused on
Index Terms—AC motor drives, active filters, power convert- vector-controlled induction motor drive systems with and with-
ers, power devices, power electronics.
out speed sensors. Sections VII–IX describe utility applications
of power electronics: a 2.8-GW high-voltage direct-current
I. INTRODUCTION (HVDC) transmission system, 300–400-MW adjustable-speed
pumped-storage generator/motor systems controlled by line-
P OWER electronics have been initiated by the invention
and production of thyristors or silicon-controlled recti-
fiers. In conjunction with microcomputers and digital signal
commutated cycloconverters or PWM rectifier/inverters, and a
48-MVA active filter for power conditioning.
processors (DSP’s) brought by microelectronics technology,
the following great leaps have been made in power electronics II. POWER SEMICONDUCTOR DEVICES
technology and applications: Power semiconductor devices are indispensable to power
1) remarkable progress in the capacity and switching speed electronic systems, like bread or rice is to the human system.
of gate-turn-off (GTO) thyristors and insulated gate No remarkable progress could be made in power electronic
bipolar transistors (IGBT’s); technology unless there were an emergence of new power de-
2) establishment in theory and practice of the so-called vices or a significant improvement of already existing devices.
“vector-controlled ac motor drives” and their prevalence
over and replacement of dc motor drives; A. Light-Triggered Thyristors
3) penetration into utility applications such as an 80-MVA
inverter-based static var compensator using GTO thyris- LTT’s rated at 8 kV and 3.5 kA (average current) have
tors, and a 300-MW high-voltage dc transmission system been developed with a forward voltage drop of 2.7 V at 3.5
using light-triggered thyristors (LTT’s). kA [1]. The thyristors are fabricated on a silicon wafer with
a 6-in diameter. The main reason for applying light-triggering
Applications of power electronics are still expanding into
technology to the thyristor is that light signals are not affected
industry and utility, so that the term “power electronics” in
by electromagnetic interference (EMI). In addition, light is
the 21st century will have a much broader meaning than it did
conducted through an optical glass fiber, which is one of
in the 1980’s. For instance, the marriage of power electronics
the best insulation materials. This ensures sufficient insulation
and power engineering will bear flexible ac transmission
between a system controller operating at ground potential
systems in the near future, unless the two get a divorce.
and a gate-drive circuit operating at potentials as high as, or
Generally, developments in power electronics yield needs of
exceeding, 250 kV [2].
power electronics, so that the needs induce the developments
in turn, as if to constitute a positive feedback system.
This paper presents the state-of-the-art of power electron- B. Gate-Turn-Off Thyristors and Static Induction Thyristors
ics in Japan, along with its prospects and directions in the GTO thyristors rated at 6 kV and 6 kA, fabricated on
21st century, including the personal views and expectations a silicon wafer with a 6-in diameter, are now available to
of the author. This paper is organized as follows. Section high-power inverters for utility/industry applications [3]. The
GTO thyristors have the capability of shutting off an anode
Manuscript received November 4, 1996; revised May 28, 1997. Recom- current of 6 kA with the help of a snubbing circuit, but the
mended by Associate Editor, L. Xu. average anode current is designed to be about 2 kA in practical
The author is with the Department of Electrical Engineering, Okayama application. Extremely high-voltage GTO thyristors aimed at
University, Okayama-City, 700 Japan (e-mail: [email protected]
u.ac.jp). 9–12-kV ratings will be developed in the near future, using
Publisher Item Identifier S 0885-8993(98)01943-7. leading edge semiconductor technology.
0885–8993/98$10.00 1998 IEEE
346 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 13, NO. 2, MARCH 1998
A static induction (SI) thyristor rated at 4 kV and 200 A high-frequency resonant inverters. This IGBT has a very low
(average current) has been developed, which has the capability forward voltage drop of 3.7 V at kA and 125 C. Fig. 2
of shutting off an anode current of 1 kA or more. The SI shows the turn-off waveforms of and in hard-switching
thyristor equipped with a snubbing capacitor of 0.1 F can operation under the conditions of V, kA,
operate at 4 kHz, which is much higher than the switching and C in (a) and C in (b). These IGBT’s
frequency limitation of the same class of GTO thyristor [3]. in a rectangular press pack are now available on the market.
However, the SI thyristor has not yet come on the market. Hitachi has developed a 3.5-kV 500-A IGBT module with a
forward voltage drop of 5.6 V at A [5]. According
to [3], 4.5 kV would be a final goal for IGBT’s to reach, and
C. Insulated Gate Bipolar Transistors
therefore such a high-voltage IGBT is expected to take the
Over the last ten years, a significant reduction in conducting place of 4.5-kV GTO thyristors in the near future.
and switching losses in IGBT’s has been achieved in the To advance performance beyond the third-generation
process of transition from the first, via the second, to the third IGBT’s, the fourth-generation devices will require exploiting
generation. At present, the third-generation IGBT’s rated at fine-line lithographic technology and/or employing the trench
600, 1200, and 1700 V are widely used for general inverter technology currently being used to produce a new power
applications with current ratings up to 600 A or more. They are MOSFET with very low on-state resistance. The fourth-
packaged with soft-recovery free-wheeling diodes into power generation IGBT will have a forward voltage drop as low
modules, so that they are often called “IGBT modules” in as 1.5 V for a 600-V device or 2.0 V for a 1200-V device
Japan. They have the advantage of not requiring any electric at each rated current.
isolation from heat sinks, thus making inverters compact. An intelligent IGBT or an intelligent power module (IPM)
Moreover, IGBT modules rated at 2000 V and 500 A are is available which is an attractive power device integrated
available and used mainly for electric traction. with circuits to protect against overcurrent, overvoltage, and/or
The Fuji Electric Company has recently developed a rectan- overheat. This intelligent IGBT based on the fourth generation
gular press-pack reverse-conducting IGBT rated at 2.5 kV and will take a few years to come on the market.
1 kA [4]. This IGBT has the following electric characteristics:
1) maximum turn-off collector current of 5 kA;
III. STATIC POWER CONVERTERS
2) saturation voltage of 4.4 V at kA and 125 C;
3) fall time of 0.85 s; The development of static power converters depends
4) rise time of 1.6 s. strongly on both power semiconductor devices and util-
Fig. 1 is a photograph of the IGBT. The size of the rectangular ity/industry needs.
press pack is 133 110 20 (mm). Nine IGBT chips
and three diode chips are integrated into the package, and A. High-Power Inverters
the size of either the single IGBT or diode chip is a square Table I summarizes future trends of high-power converters
of 20 20 (mm). This package structure efficiently removes with the focus on their capacity in 1996, 2001, and 2006.
heat from both top and bottom, so the IGBT is more suitable It is impossible to find any application of phase-controlled
to electric traction applications requiring high reliability. The thyristor converters and cycloconverters, except for high-
Fuji Electric Company has also developed a rectangular press- voltage dc transmission systems and extremely large-capacity
pack reverse-conducting IGBT rated at 1.2 kV and 2 kA for synchronous motor drive systems. A voltage-source inverter
AKAGI: STATE-OF-THE-ART OF POWER ELECTRONICS IN JAPAN 347
(a) (b)
Fig. 2. Turn-off waveforms of the rectangular press-pack reverse-conducting IGBT rated at 1.2 kV and 2 kA (200 V/div, 500 A/div, and 200 ns/div):
(a) Tj = 25 C and (b) Tj = 125 C.
TABLE I
FUTURE TRENDS IN CAPACITY OF HIGH-POWER CONVERTERS
C. General-Purpose Inverters
Over the last ten years, the emergence and advancement
of IGBT modules have made voltage-source PWM inverters
much more prevalent in general-purpose applications such
as adjustable-speed ac motor drives, uninterruptible power
supplies, and so on. At present, IGBT modules are taking the
place of bipolar junction transistors (BJT’s) because of their
high-speed switching characteristics, simple drive circuits,
and easy and compact power circuits. For example, voltage-
source PWM rectifier/inverter systems using IGBT modules
have been used as the power circuit for uninterruptible power
supplies in the range of 10 kVA to 1 MVA. However, high-
Fig. 4. Multiconnection using interphase transformers.
speed switching of IGBT modules might cause the following
problems to which little attention has been paid:
1) conducted and/or radiated EMI;
2) ground current flowing through the stray capacitances
between motor windings and frames;
3) bearing current and shaft voltage inside motors.
A soft-switched inverter such as the so-called “resonant
dc-link inverter” [10] is a candidate for overcoming the above-
mentioned problems, rather than for improving conversion
efficiency. The resonant dc-link inverter, however, has not yet
been put into practical use in Japan.
Fig. 7. System configuration of the voltage-source series-resonant inverter for induction melting.
TABLE II
RATING AND CHARACTERISTICS OF MOSFET (2SK1521)
Fig. 9. Output voltage and current waveforms of the inverter operating at Fig. 11. Input voltage and current waveforms of the diode rectifier under
unity pulse density. unity pulse density.
Fig. 10. Output voltage and current waveforms of the inverter operating at Fig. 12. Input voltage and current waveforms of the diode rectifier under
pulse density 12/16. pulse density of 12/16.
pulse density as low as 2/16. In this case, the output power is line-commutated cycloconverters operating with circulating
reduced to 80 W, that is, only 2.2% of 3.6 kW. current mode at the expense of a lower power factor in hot-
Figs. 11 and 12 show the waveforms of the line voltage strip-mill drives rated at more than 5 MW is that the cyclocon-
and current of the diode rectifier. Fig. 11 corresponds to the verter output frequency required in hot-strip-mill drives ranges
case of full power operation at unity pulse density, and Fig. 12 up to around 40 Hz, which is too high for line-commutated
corresponds to the case of operation at a pulse density of 12/16. cycloconverters having an input (line) frequency of 50/60 Hz
The line current is an almost sinusoidal waveform with unity to operate in circulating current-free mode. Replacement of
power factor, the amplitude of which depends on the pulse conventional electrically triggered thyristors with LTT’s makes
density. the cycloconverters more reliable and compact.
The voltage-source series-resonant PDM inverters are capa- With the continuous increase in the voltage/current rat-
ble of adjusting the output power by themselves, as well as of ings of GTO thyristors, PWM rectifier/inverters using GTO
performing both ZVS and ZCS in all the operating conditions. thyristors tend to be preferred to line-commutated cyclocon-
Hence, they have been practically applied in dental casting verters because they have the capability of operating at unity
machines of 200–450 kHz, 2–5 kW, and corona discharge power factor with less harmonics on the line side. However,
treaters of 20–50 kHz and 1–40 kW. PWM rectifier/inverters are at present inferior in efficiency
to cycloconverters. We have to think out a viable and cost-
effective solution to reduce snubbing losses in the PWM
V. STEEL-MILL DRIVES
rectifier/inverter [8].
The steel industry in Japan has been actively introduc-
ing new technologies of power electronics and motor drives
VI. VECTOR-CONTROLLED INDUCTION MOTOR DRIVES
since the beginning of the 1960’s. Table III summarizes
the present status of steel-mill drives in Japan. Hot-strip-
mill drives require larger motors than cold-strip-mill drives, A. Vector Control with Speed Sensor
whereas cold-strip-mill drives require higher control perfor- Vector-controlled induction motors with shaft encoders or
mance than hot-strip-mill drives [13]. The reason for applying speed sensors have been widely applied in combination with
AKAGI: STATE-OF-THE-ART OF POWER ELECTRONICS IN JAPAN 351
TABLE III
VECTOR-CONTROLLED AC MOTOR DRIVE SYSTEMS FOR STEEL MILLS
Fig. 13. System block diagram of the sensorless drive characterized by a speed-control range of 1:75.
voltage-source PWM inverters using IGBT modules. Accord- as the price gradually decreases due to device cost reduction
ing to the specification of new products sold by the Toyo and power electronics integration strategies.
Electric Company, vector-controlled induction motor drive Miyashita et al. have developed speed-sensorless vector-
systems ranging from 1.1 kW to 1 MW provide the following controlled induction motor drive systems characterized by a
performance specifications: wide range of speed control, which are now available from
1) a broad range of speed control (1:1000) with speed- the Toyo Electric Company [16]. Fig. 13 shows the system
control accuracy of 0.01%; block diagram of the sensorless drive based on the space vector
2) constant torque operation in a speed range of 1.8–1800 theory, which is different in principle from a conventional
rpm; system oriented to the secondary interlinkage flux vector.
3) high torque starting at 150% of the rated torque. Speed-sensorless vector-controlled induction motor drive sys-
tems ranging from 1.1 kW to 1 MW provide the following
B. Vector Control Without Speed Sensor good performance:
Recently, many researchers and engineers have made a 1) a wide range of speed control (1:75) with speed-control
significant effort toward improving the performance of speed- accuracy of 0.5% and speed response of 90 rad/s;
sensorless vector-controlled induction motor drive systems. As 2) constant torque operation in a speed range of 24 rpm
a result of keen competition among Japanese companies such to 1800 rpm with torque accuracy of 3% and torque
as Hitachi, Toshiba, Mitsubishi, Fuji, Meiden, Yaskawa, and response of 1000 rad/s;
so on, various kinds of control systems have been proposed 3) high-torque starting at 150% of the rated torque.
and implemented with voltage-fed PWM inverters [14], [15]. 1) Flux Estimation: The stator interlinkage flux vector
A good market is developing for the speed-sensorless systems and the instantaneous motor torque are calculated by (1)
352 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 13, NO. 2, MARCH 1998
and (2)
(1)
(2)
Here, is given by
(3)
Fig. 15. Thyristor module consisting of seven LTT’s rated at 6 kV and 2.5
kA.
Fig. 19. The 48-MVA active filter installed for power conditioning in the Shintakatsuki substation.
(a) (b)
Fig. 20. Compensation effect on the impact drop, variation, and imbalance of voltage: (a) before and (b) after compensation.
maximum output power of 12 MW draws unbalanced varying power quality. The concept of the instantaneous active and
active and reactive powers from the Scott transformer, the reactive power theory, or the so-called “ - theory” [24] in
primary of which is connected to the 154-kV utility grid. More the time domain, has been applied to the control strategy for
than 20 high-speed trains pass per hour during the daytime. the shunt-active filter.
This causes voltage impact drop, variation, and imbalance at Fig. 20 shows voltage waveforms on the 154-kV bus and
the terminals of the 154-kV utility system, accompanied by a the voltage imbalance factor before and after compensation,
serious deterioration in the power quality of other consumers measured at 14:20–14:30 on July 27, 1994. The active filters
connected to the same power system. The purpose of the shunt- are effective not only in compensating for the voltage impact
active filters with a total rating of 48 MVA is to compensate drop and variation, but also in reducing the voltage imbalance
for voltage impact drop, voltage variation, and imbalance at factor from 3.6% to 1%. Here, the voltage imbalance factor
the terminals of the 154-kV power system and to improve the is the ratio of the negative to positive-sequence component in
356 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 13, NO. 2, MARCH 1998
the three-phase voltages on the 154-kV bus. At present, several [10] D. M. Divan, “The resonant dc link converter—A new concept in static
active filters in a range of 40–60 MVA have been installed in conversion,” in Proc. 1986 IEEE/IAS Annu. Meet., pp. 648–656.
[11] M. Kaneda and Y. Sekino, “High-frequency power supply systems
substations along the Tokaido Shinkansen [25]. for tube welding,” Meiden Jiho, vol. 248, no. 3, pp. 11–16, 1996 (in
Japanese).
[12] H. Fujita and H. Akagi, “Pulse-density-modulated power control of a 4
X. CONCLUSION kW 450 kHz voltage-source inverter for induction melting applications,”
This paper has presented a survey of the state-of-the-art of IEEE Trans. Ind. Applicat., vol. 32, no. 2, pp. 279–286, 1996.
[13] M. Hattori, “Future trends of power electronics in industry,” in Proc.
power electronics in Japan, with the main focus on technology 1996 IEE Japan Annu. Convention, no. S.15-4 (in Japanese).
relevant to medium–high-power applications. Power electron- [14] T.-H. Chin, Y. Miyasita, and T. Koga, “Sensorless induction motor
ics technology has brought high performance, high efficiency, drives: An innovative component for advanced motion control,” in Proc.
1996 Int. Federation of Automatic Control, San Francisco, CA, vol. A,
energy savings, high reliability, maintenance-free operation, pp. 445–450.
and compactness to all electrical and electronic equipment. [15] H. Umida, “System configurations of speed-sensorless vector control,”
The author expects the continued efforts of power electronics Proc. Inst. Elect. Eng., vol. 117-D, no. 5, pp. 541–543, 1997 (in
researchers and engineers, including himself, to make more Japanese).
[16] Y. Miyasita, A. Imayanagida, and T. Koga, “Recent industrial ap-
significant progress in power electronics technology by 2006 plication of speed-sensorless vector control in Japan,” in Proc. 1994
than that made in the last ten years. IEEE/IES IECON, pp. 1573–1578.
[17] Y. Ohmori, T. Nakanishi, and H. Kobayashi, “A speed-sensorless spatial
vector controlled inverter adding an auto-measuring function,” in Proc.
ACKNOWLEDGMENT 1995 European Power Electronics Conf., Seville, Spain, 1995, vol. 3,
pp. 452–457.
The author would like to thank Prof. J. G. Kassakian of the [18] S. Kitamura et al., “HVDC system technologies,” Toshiba Rev., vol. 49,
Massachusetts Institute of Technology for his suggestions and no. 6, pp. 1–28, 1994 (in Japanese).
English-language editing. [19] E. Kita, M. Nishi, K. Saito, and A. Bando, “A 400 MW adjustable
speed pumped-storage system,” Water Power Dam Construction, pp.
37–39, 1991.
REFERENCES [20] S. Mori, E. Kita, H. Kojima, T. Sanematsu, A. Shibuya, and A. Bando,
“Commissioning of 400 MW adjustable speed pumped-storage system
[1] T. Hasegawa, K. Yamaji, H. Irokawa, H. Shirahama, C. Tanaka, and K. for Ohkawachi hydro power plant,” in Proc. 1995 Cigre Symp., 1995,
Akabane, “Development of a thyristor valve for next generation 500 kV no. 520-04.
HVDC transmission systems,” IEEE Trans. Power Delivery, vol. 11, [21] S. Furuya, F. Wada, K. Hachiya, and K. Kudo, “Large capacity GTO
no. 4, pp. 1783–1788, 1996. inverter-converter for double-fed adjustable speed system,” in Proc.
[2] K. Imai, “Power electronics strives to be friendly to the environment,” 1995 Cigre Symp., 1995, no. 530-04.
IEEE Trans. Power Delivery, vol. 11, no. 4, pp. 1783–1788, 1996. [22] H. Akagi, “New trends in active filters for power conditioning,” IEEE
[3] A. Nakagawa and Y. Seki, “Future trends in power semiconductor
Trans. Ind. Applicat., vol. 32, no. 6, pp. 1312–1322, 1996.
devices,” in Proc. 1996 IEE Japan Annu. Convention, no. S.15-1 (in
[23] A. Iizuka, M. Kishida, Y. Mochinaga, T. Uzuka, K. Hirakawa, F.
Japanese).
[4] Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, and Aoyama, and T. Masuyama, “Self-commutated static var generators at
Y. Seki, “2.5 kV 1000 A power pack IGBT,” in Proc. 8th Int. Symp. Shintakatsuki substation,” in Proc. 1995 Int. Power Electronics Conf.,
Power Semiconductor Devices and ICs, Maui, HI, 1996, pp. 299–302. Yokohama, Japan, 1995, pp. 609–614.
[5] H. Kobayashi et al., “3.5 kV IGBT,” in Proc. 1996 IEE Japan Annu. [24] H. Akagi, Y. Kanazawa, and A. Nabae, “Instantaneous reactive power
Convention, no. 752 (in Japanese). compensators comprising switching devices without energy storage
[6] M. Honbu, “Present status of the development of high-power inverters,” components,” IEEE Trans. Ind. Applicat., vol. 20, no. 3, pp. 625–630,
in Proc. 1992 IEE Japan Annu. Convention, no. S.8-3 (in Japanese). 1984.
[7] A. Nabae, I. Takahashi, and H. Akagi, “A new neutral-point-clamped [25] M. Takeda, S. Murakami, A. Iizuka, M. Hirakawa, M. Kishida, S. Hase,
PWM inverter,” IEEE Trans. Ind. Applicat., vol. 17, no. 5, pp. 518–523, and H. Mochinaga, “Development of an SVG series for voltage control
1981. over three-phase unbalance caused by railway load,” in Proc. 1995 Int.
[8] H. Okayama, M. Kayo, S. Tammy, T. Fujii, R. Ached, S. Mizoguchi, H. Power Electronics Conf., Yokohama, Japan, 1995, pp. 603–608.
Ogawa, and Y. Shimomura, “Large capacity high performance 3-level
GTO inverter systems for steel main rolling mill drives,” in Proc. 1996
IEEE/IAS Annu. Meet., pp. 174–179.
[9] H. Takaoka and O. Tanaka, “Development of large capacity three-level
IGBT inverter,” in Proc. 1996 IEE Japan Annu. Convention, no. 794 Hirofumi Akagi (M’87–SM’94–F’96), for a photograph and biography, see
(in Japanese). this issue, p. 322.