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Hitting The Resolution Limit: Lithography: Double Patterning

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30 views

Hitting The Resolution Limit: Lithography: Double Patterning

Uploaded by

bloodymary18
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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CHE323/CHE384

Chemical Processes for Micro- and Nanofabrication Hitting the Resolution


www.lithoguru.com/scientist/CHE323
Limit
Lecture 59
• Wavelength is stuck at 193 nm, the highest NA
Lithography: we have is 1.35, and k1 is limited to 0.25
Double Patterning
λ 193nm
Chris A. Mack
R = k1 ≥ 0.25 = 36 nm
NA 1.35
Adjunct Associate Professor

• This resolution limit is technically the smallest


“half pitch” that can be printed
– Practical half-pitch limit is more like 38 − 40 nm
– Minimum pitch is therefore 75 – 80 nm

© 2013 by Chris A. Mack www.lithoguru.com © Chris Mack 2

Breaking the Resolution Litho-Etch-Litho-Etch


Limit (LELE)

• We can break this resolution limit using double


patterning Resist
– Print twice, several styles are available
Hard Mask
– New limit is about a 40-nm pitch (k1 = 0.14 or so)
Litho 1

Etch 1

© Chris Mack 3 © Chris Mack 4

Litho-Etch-Litho-Etch
(LELE) Double Patterning

Courtesy of Imec

Litho 2

Etch 2

© Chris Mack 5 © Chris Mack 6

Page 1
Self-Aligned Double
LELE Problems Patterning (SADP)

• Cost – the cost of LELE is essentially double that Litho1 + Etch1


of single patterning
(dummy patterns)
• Overlay – overlay errors between the two patterns
translates into CD errors (errors in gap width)
– Requires much tighter overlay control than single
patterning Grow Sidewalls
• Pattern decomposition – not every pattern is (aka spacers)
easily decomposed into two separate patterns
(especially random logic)
Etchback
© Chris Mack 7 © Chris Mack 8

Self-Aligned Double Self-Aligned Double


Patterning (SADP) Patterning (SADP)

Strip Dummy
Pattern

Etch 2

From Applied Materials


© Chris Mack 9 © Chris Mack 10

SADP – top down view SADP Problems

• Cost – This is cheapest of the double patterning


approaches: only one critical lithography step
• Overlay – Not much different from single
patterning requirements
• Design – every feature must have the same
linewidth (restricted design rules)
• Trim Steps – one or two trim patterning steps are
required
Litho1 + Etch1 Sidewalls form
Loops • Currently in widespread use, especially Flash
© Chris Mack 11 © Chris Mack 12

Page 2
Complimentary Lecture 59:
Lithography What have we Learned?

• Use dipole illumination or alternating PSM to form • What is the current resolution limit of single
dense lines/spaces (or SADP for smaller pitch) patterning?
• Use second litho-etch step to trim ends of lines • Name three double-patterning approaches
and to cut patterns into the lines • What are the main advantages and
disadvantages of each double patterning
approach?
• Essay question: do you think there is a future for
quadruple patterning? Why or why not?

© Chris Mack Intel 32-nm node (source: Intel) 13 © Chris Mack 14

Page 3

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