IPA90R500C3

CoolMOS™ Power Transistor

Product Summary
Features
V DS @ T J=25°C 900 V
• Lowest figure-of-merit R ON x Qg
R DS(on),max @ T J= 25°C 0.5 Ω
• Extreme dv/dt rated
Q g,typ 68 nC
• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge PG-TO220 FP

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Type Package Marking

IPA90R500C3 PG-TO220 FP 9R500C

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current 2) ID T C=25 °C 11 A

T C=100 °C 6.8

Pulsed drain current3) I D,pulse T C=25 °C 24

Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 388 mJ

Avalanche energy, repetitive t AR3),4) E AR I D=2.2 A, V DD=50 V 0.74

Avalanche current, repetitive t AR3),4) I AR 2.2 A

MOSFET dv /dt ruggedness dv /dt V DS=0...400 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f>1 Hz) ±30

Power dissipation P tot T C=25 °C 34 W

Operating and storage temperature T J, T stg -55 ... 150 °C

Mounting torque M2.5 screws 50 Ncm

Rev. 1.0 page 1 2008-07-29

 IPA90R500C3

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current 2) IS 6.6 A

T C=25 °C
Diode pulse current 3) I S,pulse 23

Reverse diode dv /dt 5) dv /dt 4 V/ns

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 3.7 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T J=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 900 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=0.74 mA 2.5 3 3.5

V DS=900 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 µA
T j=25 °C

V DS=900 V, V GS=0 V,
- 10 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=6.6 A,
Drain-source on-state resistance R DS(on) - 0.39 0.5 Ω
T j=25 °C

V GS=10 V, I D=6.6 A,
- 1.1 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 1.3 - Ω

Rev. 1.0 page 2 2008-07-29

 IPA90R500C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 1700 - pF

Output capacitance C oss f =1 MHz - 83 -

Effective output capacitance, energy

C o(er) - 52 -
related6)
V GS=0 V, V DS=0 V
to 500 V
Effective output capacitance, time
C o(tr) - 200 -
related7)

Turn-on delay time t d(on) - 70 - ns

Rise time tr V DD=400 V, - 20 -

V GS=10 V, I D=6.6 A,
Turn-off delay time t d(off) R G=30.9 Ω - 400 -

Fall time tf - 25 -

Gate Charge Characteristics

Gate to source charge Q gs - 8 - nC

Gate to drain charge Q gd V DD=400 V, I D=6.6 A, - 29 -

Qg V GS=0 to 10 V
Gate charge total - 68 tbd

Gate plateau voltage V plateau - 4.6 - V

Reverse Diode

V GS=0 V, I F=6.6 A,
Diode forward voltage V SD - 0.8 1.2 V
T j=25 °C

Reverse recovery time t rr - 480 - ns

V R=400 V, I F=I S,
Reverse recovery charge Q rr - 8.5 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 31 - A

1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width t p limited by T J,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.

Rev. 1.0 page 3 2008-07-29

 IPA90R500C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

40 102
limited by on-state
resistance

1 µs
30
10 µs

101 100 µs
1 ms
P tot [W]

I D [A]
10 ms
20

100

10
DC

0 10-1
0 25 50 75 100 125 150 1 10 100 1000
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T J=25 °C
parameter: D=t p/T parameter: V GS

35
20 V
10 V
30 8V
6V

0.5
25
100
0.2
5.5 V
Z thJC [K/W]

20
I D [A]

0.1

0.05
15
5V
10-1 0.02

0.01 10

4.5 V
single pulse
5

4V
-2
10 0
10-5 10-4 10-3 10-2 10-1 100 101 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 1.0 page 4 2008-07-29

 IPA90R500C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T J=150 °C R DS(on)=f(I D); T J=150 °C
parameter: V GS parameter: V GS

15 10
20 V
10 V
6V
8V
5V

10 4.5 V

R DS(on) [Ω]
I D [A]

4
10 V
5 4V

5V
2
4.8 V
4.5 V
4V

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T J); I D=6.6 A; V GS=10 V I D=f(V GS); V DS=20V
parameter: T J

1.5 35

25 °C
30
1.2

25

0.9
R DS(on) [Ω]

20
I D [A]

15 150 °C
0.6 98 %

typ
10

0.3
5

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T J [°C] V GS [V]

Rev. 1.0 page 5 2008-07-29

 IPA90R500C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD)
parameter: V DD parameter: T J

10 102

8 25 °C, 98%

150 °C, 98%

101
6
400 V 720 V
V GS [V]

I F [A]
25 °C

4 150 °C

100

0 10-1
0 20 40 60 80 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T J); I D=2.2 A; V DD=50 V V BR(DSS)=f(T J); I D=0.25 mA

400 1050

1000
300

950
V BR(DSS) [V]
E AS [mJ]

200

900

100
850

0 800
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T J [°C] T J [°C]

Rev. 1.0 page 6 2008-07-29

 IPA90R500C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

10000 8

Ciss

1000 6

E oss [µJ]
C [pF]

100 4
Coss

10 2

Crss

1 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
V DS [V] V DS [V]

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 IPA90R500C3

Definition of diode switching characteristics

Rev. 1.0 page 8 2008-07-29

 IPA90R500C3

PG-TO220 FP Outlines/Fully isolated package (2500VAC; 1 minute)

Dimensions in mm/inches

Rev. 1.0 page 9 2008-07-29

 IPA90R500C3

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.0 page 10 2008-07-29