2SA1315

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1315
Power Amplifier Applications
Unit: mm
Power Switching Applications

• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC3328

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −80 V

Collector-emitter voltage VCEO −80 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Base current IB −1 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C JEDEC TO-92MOD
Storage temperature range Tstg −55 to 150 °C JEITA ―
TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −80 V, IE = 0 ― ― −1.0 µA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −80 ― ― V
hFE (1)
VCE = −2 V, IC = −0.5 A 70 ― 240
DC current gain (Note)
hFE (2) VCE = −2 V, IB = −1.5 A 40 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ― −0.2 −0.5 V
Base-emitter saturation voltage VBE (sat) IC = −1 A, IB = −0.05 A ― −0.9 −1.2 V
Transition frequency fT VCE = −2 V, IC = −0.5 A ― 80 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 45 ― pF

Turn-on time ton Output ― 0.2 ―

IB1
20 µs Input

30 Ω
IB2
Switching time Storage time tstg IB2 ― 1.0 ― µs
IB1

VCC = −30 V

Fall time tf ― 0.2 ―

−IB1 = IB2 = 0.05 A, duty cycle ≤ 1%

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A1315 Part No. (or abbreviation code)

Lot No.

Characteristics A line indicates

lead (Pb)-free package or
indicator
lead (Pb)-free finish.

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IC – VCE VCE – IC
−2.0 −1
−30 −15 Common emitter
−20

(V)
Ta = 25°C
−1.6 −0.8
IC (A)

VCE
−10
IB = −5 mA −10 −20 −30 −50 −70

Collector-emitter voltage
−1.2 −0.6 −100
Collector current

IB = −5 mA
−0.8 −0.4

Common emitter
−0.4 −0.2
Ta = 25°C

0
0 0
0 −2 −4 −6 −8 −10 −12 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4

Collector-emitter voltage VCE (V) Collector current IC (A)

VCE – IC VCE – IC
−1 −1
Common emitter Common emitter
(V)

(V)

Ta = 100°C Ta = −55°C
IB = −5 mA −15
−0.8 −0.8
VCE

VCE

−10 −20 −30 −40

IB = −5 mA −10 −20 −30 −50 −70 −50 −70
Collector-emitter voltage

Collector-emitter voltage

−0.6 −0.6

−100
−100
−0.4 −0.4

−0.2 −0.2
)

0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4

Collector current IC (A) Collector current IC (A)

VCE (sat) – IC
hFE – IC
500 −0.5 Common emitter
Collector-emitter saturation voltage

Common emitter IC/IB = 20

300 VCE = −2 V −0.3
Ta = 100°C
hFE

VCE (sat) (V)

25 Ta = 100°C
DC current gain

100 −0.1
−55 25
50 −0.05 −55

30 −0.03

10 −0.01
−0.01 −0.03 −0.1 −0.3 −1 −0.01 −0.03 −0.1 −0.3 −1

Collector current IC (A) Collector current IC (A)

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VBE (sat) – IC IC – VBE

−3 −2.0
Base-emitter saturation voltage

Common emitter Common emitter

IC/IB = 20 VCE = −2 V
Ta = −55°C −1.6
−1
VBE (sat) (V)

IC (A)
−0.5 25
−1.2
100

Collector current
−0.3

−0.8 Ta = 100°C 25 −55

−0.1
−0.01 −0.03 −0.1 −0.3 −1
−0.4
Collector current IC (A)

0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.6

Base-emitter voltage VBE (V)

Safe Operating Area PC – Ta

−5 1200
IC max (pulsed)*
−3
(mW)

IC max (continuous) 1 ms*

1000
10 ms*
−1
PC
IC (A)

100 ms* 800

−0.5
Collector power dissipation

1 s*
−0.3
DC operation
600
Collector current

Ta = 25°C
−0.1
400
−0.05
−0.03
*: Single nonrepetitive pulse 200
Ta = 25°C
−0.01 Curves must be derated
linearly with increase in 0
−0.005 temperature. VCEO max 0 40 80 120 160 200 240 280

−0.003
−0.3 −1 −3 −10 −30 −100 Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

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RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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