Measurement 149 (2020) 106991

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Measurement
journal homepage: www.elsevier.com/locate/measurement

Design of a high efficiency class-F power amplifier with large signal and
small signal measurements
Saeed Roshani ⇑, Sobhan Roshani
Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

a r t i c l e i n f o a b s t r a c t

Article history: In this paper, a modified class-F power amplifier is designed and implemented with new method at
Received 13 July 2018 900 MHz frequency. The meandered line compact microstrip resonant cell (MLCMRC), with simple
Received in revised form 20 August 2019 structure is proposed to use as a harmonic control circuit (HCC). The proposed MLCMRC correctly acts
Accepted 23 August 2019
as open-circuit at third and fifth harmonics and acts as short-circuit at second and fourth harmonics.
Available online 26 August 2019
In this design, the proposed PA is integrated with simple MLCMRC, while the large conventional matching
lines are omitted, which leads to harmonics suppression, size reduction, and PAE improvement at same
Keywords:
time. The proposed class-F power amplifier is characterized by small-signal and large-signal measure-
Class-F power amplifier
Harmonic suppression
ments to evaluate its performance. The maximum obtained gain for the proposed PA is 18.5 dB. Also, this
Microstrip meandered line design can obtain 74% PAE under 15 dBm input power, which shows 5% and 10% improvement in the
Efficiency maximum gain and PAE, respectively compared to the conventional class-F PA. Moreover, the applied
MLCMRC resulted in the 36% size reduction, compared to the same PA without MLCMRC.
Ó 2019 Elsevier Ltd. All rights reserved.

1. Introduction conditions is limited in class E amplifiers [3]. In the higher

frequencies the optimum conditions will not be longer satisfied
Power amplifiers (PAs) are widely used components, in the and therefore the efficiency will be decreased. Also, maximum nor-
microwave circuits and systems. PAs are categorized into various malized switch voltage in ZVS class E power amplifier with shunt
classes. Two major groups of power amplifiers are biasing class capacitance is 3.56 with external linear capacitance [4]. However,
and operating class amplifiers. The operating class amplifiers are this value is higher in practice, due to the parasitic nonlinear
identified in two categories which are current-mode and drain-to-source capacitance [5,6]. The high switch voltage results
switching-mode PAs [1]. in lower power output capability of the amplifier and also, limits
Biasing class amplifiers, such as: class A, B, C and AB have higher the operation of the amplifier because of MOSFET breakdown
linearity, compared to the switching amplifier. But they suffer from drain-to-source voltage.
low efficiency, which increases power consumption and limits PAs For high efficiency design with low size and low voltage, class-F
applications [2]. Current-mode amplifiers, such as: class F and amplifier is very suitable candidate [7]. By growing interest in high
tuned load amplifiers are based on the harmonic terminations syn- efficiency, PA design strategies is focusing more and more on
thesized across the active device. Switched-mode amplifiers, such harmonic terminating schemes [8]. In ideal class-F PA, the drain
as: class E, D, G, H, S and etc. are performed by identifying the of applied transistor has zero and infinite impedance in even and
switching duty-cycle and/or the switching combination [1]. odd harmonics, respectively, which results to the square voltage
The fast growth of wireless communication circuits and sys- waveform and half sine current waveform at drain of the applied
tems, leads to increase demand for low power, low size and higher transistor [9,10]. In practical class-F amplifiers, these conditions
efficiency. Therefore, in past decades switching amplifiers have could be obtained partially. Harmonic control circuit (HCC), which
attracted a lot of attentions. In the different classes of the switching also known as harmonic termination technique (HTT) has critical
amplifiers, class-F and -E are more common classes. role in the class-F amplifiers design. In past, external lumped
The class E power amplifier suffers from several deficiencies. components (capacitors and inductors) or bulky open or short
For example, the maximum operating frequency with optimum stubs are used to control harmonics. These approaches are usually
complicated, large, not straightforward [11] and just eliminate 3rd
harmonic, which is far from ideal conditions.
⇑ Corresponding author.
E-mail address: [email protected] (S. Roshani).

https://doi.org/10.1016/j.measurement.2019.106991
0263-2241/Ó 2019 Elsevier Ltd. All rights reserved.
2 S. Roshani, S. Roshani / Measurement 149 (2020) 106991

In some recently works, resonators are used as transistor suppressed and the even harmonics will be passed which result
matching network [12–14], which results in size reduction and in in the prefect performance. In many other related works just 3rd
some cases PAE improvement. harmonic is suppressed, which results in the disturbed responses.
Microstrip resonators have several roles in microwave circuits.
Resonators creates transmission zeroes, eliminate harmonics, can 2.1. MLCMRC and harmonic control circuit design procedure
be used as sensors [15,16] and also can be used as harmonic con-
trol circuits at the output block of amplifiers. In this section the design procedure of the proposed meandered
In [7], a compact microstrip resonant cell (CMRC) is used in the line compact microstrip resonant cell (MLCMRC), which is used as
class-F PA as matching network and harmonic control circuit the HCC block, is introduced. These resonators are simulated using
(HCC). This method is interesting but only eliminates 3rd harmonic the advanced design system (ADS) software, based on RT/Duroid
and the obtained linearity is poor. In [17], two cascaded CMRC cells 5880 substrate (er = 2.2, H = 0.508 mm, tana = 0.0009).
are used as multi-harmonic control circuit (M-HCC) in class-F
amplifier structure to create dual-band power amplifier. In [18] 2.1.1. Primitive resonator
another type of CMRC circuit is implemented on the HBT amplifier The proposed power amplifier works at 900 MHz, therefore the
as harmonic control circuit in order to improve the PAE parameter. applied resonator which is used as the harmonic control circuit
But the applied CMRC cell in this work only suppresses one har- (HCC) should suppress third and fifth harmonics with correspond-
monic and efficiency parameter in this work is not good. In [19] ing frequency of 2.7 GHz and 4.5 GHz.
a high-efficiency class-F power amplifier (PA) integrated with The layout of the primitive resonator is depicted in Fig. 2(a).
cavity-microstrip filter is designed. This filter is used to realize out- This symmetric cell has three open stubs. In order to suppress
put impedance matching and suppress the third harmonic. The the nth harmonics, the length of the applied open stub must be
applied filter in this works is also only eliminates 3rd harmonic. equal to p/2n [21–23].
In [20] another type of CMRC circuit is inserted as harmonic control Since middle open stub (los1) is used to suppress the third har-
circuit and output matching network. The presented CMRC circuit monic, therefore the length of los1 is calculated as follows:
in this work suppresses 3rd and 5th harmonics and the obtained
p
power added efficiency (PAE) parameter in this design is 72.5%. los1 ¼ ð1Þ
In the proposed paper, a novel meandered line compact micro- 6
strip resonant cell (MLCMRC) is applied as harmonic control circuit With applied substrate and center frequency of 0.9 GHz, the
(HCC) block, in order to suppress desired harmonics and improve corresponding physical length of los1 is equal to 20.25 mm.
the efficiency of the basic class-F amplifier. The proposed PA cor- Since middle two symmetric open stubs (los2) are used to sup-
rectly works at 0.9 GHz and the proposed MLCMRC eliminates press the fifth harmonic, therefore the length of loss is calculated
3rd and 5th harmonics with high suppression levels. The proposed as follows:
method leads to compact class-F amplifier with high PAE, good lin- p
earity and high gain. los1 ¼ ð2Þ
10
With applied substrate and center frequency of 0.9 GHz, the
2. Circuit design corresponding physical length of los2 is equal to 12.15 mm.
The dimensions of the primitive resonator are listed as follows:
The structure of the simple class-F power amplifier is illustrated l1 = 1.5, los1 = 1.5, los2 = 1.5, W1 = 1.56, W2 = W4 = 0.5, W3 = 1,
in Fig. 1(a). The drain current and voltage waveforms for the ideal LT1 = 34.6 mm and WT1 = 17.5 mm (all in mm).
class-F power amplifier are demonstrated in Fig. 1(b). The drain The frequency response of primitive resonator is shown in the
voltage waveform of applied transistor includes the main fre- Fig. 2(b). As seen in this figure, the primitive resonator correctly
quency and the odd harmonics; therefore, drain waveform should suppresses the third and fifth harmonics, but this cell occupies
be square wave in the ideal Class-F. The drain current waveform large area of 34.6 mm  17.5 mm (0.14 k  0.07 k), which is
includes the fundamental and even harmonics, therefore, drain undesirable.
current in ideal class-F should be half-sinusoid.
In practice, the ideal situation will not exactly occur. But, by 2.1.2. Compact resonator
using the HCC block in the class-F PA, the odd harmonics will be The primitive resonator is designed in the previous section. This
cell works correctly, but occupies large area. Therefore, to reduce
the size of the primitive resonator, meandered lines are used
instead of the long open stubs with corresponding length of los1
and los2. The layout of the compact resonator is shown in the
Fig. 3(a).
The dimensions of the compact resonator are listed as follows:
l1 = 1.5, l2 = 1.5, l3 = 10.5, l4 = 4, l5 = 5.5, l6 = 4, W1 = 1.56, W2 = 0.5,
W3 = 1, W4 = 0.5, LT2 = 10.5 mm and WT2 = 17.5 mm (all in mm).
The frequency response of the compact resonator is shown in
the Fig. 3(b). The compact resonator correctly suppresses the third
and fifth harmonics and has small size, compared to the primitive
resonator. The overall size of the compact resonator is
10.5 mm  17.5 mm (0.0.04 k  0.07 k). This resonator is 70%
smaller than primitive one.

2.1.3. Proposed resonator (meandered line compact microstrip

resonant cell)
Fig. 1. (a) Schematic diagram of the simple class-F PA. (b) Ideal current and voltage In order to have more size reduction in the proposed resonator,
forms for class-F PA. the connection line between two ports in compact resonator is bent.
 S. Roshani, S. Roshani / Measurement 149 (2020) 106991 3

S 11

S_parameters (dB)
-20
S 21

-40

-60
0 1 2 3 4 5 6
Freq(GHz)

(a) (b)
Fig. 2. (a) Layout and (b) frequency response of the primitive resonator.

0
S 11
S_parameters (dB)

-20
S 21

-40

-60
0 1 2 3 4 5 6
Freq(GHz)

(a) (b)
Fig. 3. (a) Layout and (b) frequency response of the compact resonator.

The layout of the proposed meandered line compact microstrip res- and pass the second harmonic, which occupies large area. In the
onant cell (MLCMRC) is shown in the Fig. 4(a) and its frequency proposed amplifier, the presented MLCMRC circuit is used as the
response is shown in the Fig. 4(b). This suppressing cell is simulated HCC block, to reduce the circuit size and improve the harmonics
using the advanced design system (ADS) software, based on RT/Dur- control blocks, which will be described in the next section.
oid 5880 substrate (er = 2.2, H = 0.508 mm, tana = 0.0009). The
dimensions of the presented MLCMRC are listed as follows:
l1 = 1.5, l2 = 1.5, l3 = 10.5, l4 = 4, l5 = 5.5, l6 = 4, W1 = 1.56, W2 = 0.5, 3. Proposed Class-F PA integrated with MLCMRC
W3 = 1 and W4 = 0.5 (all in mm).
The overall size of the MLCMRC is 8.3 mm  13.5 mm (0.03 The schematic block diagram of the proposed 900 MHz class-F
k  0.05 k). The proposed resonator is 82% smaller than primitive amplifier integrated with MLCMRC is illustrated in Fig. 6. In this
resonator. design, the proposed MLCMRC is used as HCC and output matching
As seen in the Fig. 4(b), frequency response of the proposed network. The applied MLCMRC suppresses the 3rd and 5th har-
MLCMRC shows that the proposed suppressing cell has two trans- monics and passes the 2nd and 4th harmonics, which results in
mission zeros at 2.7 GHz and 4.5 GHz, with high levels of attenua- the good performance. Two tunable stubs with proper lengths
tion. This response is very good for the final class-F PA, which are applied to both sides of the proposed MLCMRC for compensat-
works at 0.9 GHz. The proposed MLCMRC suppresses the 3rd and ing the transistor parasitic capacitances. As a result, the MLCMRC
5th harmonics of PA and passes the second and 4th harmonics cor- and two tunable stubs can effectively operate as a harmonic con-
rectly, which results in the good PA performances. trol circuit.
The layouts of the conventional and proposed class-F power
2.2. Basic class-F power amplifier amplifiers are shown in Fig. 7. The proposed circuit has small size
of 55.6 mm  64.1 mm (0.26 k  0.22 k), which features 36% size
The structure of the basic 900 MHz class-F power amplifier is reduction, compared to the simple structure.
illustrated in Fig. 5. In the power amplifier design, a low-voltage The drain waveforms of the proposed class-F PA are depicted in
pHEMT ATF-34143 transistor is used. The applied DC bias voltages Fig. 8. The proposed amplifier must suppresses 3rd and 5th har-
of the pHEMT ATF-34143 transistor is Vg = -0.75 V and Vd = 5 V. In monics and pass the 2nd and 4th harmonics, so the current and
the basic power amplifier, only open-ended stubs are used in both voltage waveforms are approximately half sine and square, respec-
of the output and input matching networks. Unfortunately, the tively, which shows more similarity to the ideal waveforms, com-
HCC in the basic design can only suppress the third harmonic pared to the other reported works.
4 S. Roshani, S. Roshani / Measurement 149 (2020) 106991

4.1. Small signal measurements

The simulated and measured S-parameters are depicted in

Fig. 10, which show good agreements between simulated and mea-
sured results. The S-parameters shows that, the gain of the pro-
posed class-F PA at 0.9 GHz is about 18.5 dB. As mentioned, the
proposed power amplifier is designed for GSM applications. The
GSM-900 standard frequency band to send information is 890–
915 MHz and in some countries the GSM-900 band has been
extended to cover a larger frequency range. This extended GSM
(E-GSM) uses frequency range 880–915 MHz. As seen in Fig. 10,
the S-parameter results show that, the proposed amplifier cor-
rectly works in GSM standard at the whole frequency range of
(a) 880–915 MHz with more than 18 dB power gain. The GSM fre-
0 quency band is shaded in Fig. 10.
In order to determine the stability of the proposed power
amplifier the Rollet’s condition, which known as k -4 test are used.
S_parameters (dB)

With k -4 test, a device will be unconditionally stable if K > 1 is

-20 S 11
satisfied. K is called as Rollet’s stability factor and is given by:
S 21
1  jS11 j2  jS22 j2 þ jDj2
k ¼ ð3Þ
-40 2jS12 S21 j
and the auxiliary condition that |D |< 1 is simultaneously satis-
fied, where:
-60
jDj ¼ jS11 S22  S12 S21 j ð4Þ
0 1 2 3 4 5 6
Freq(GHz) These two conditions are necessary and sufficient for uncondi-
(b) tional stability of the device. If the stability factor is less than unity,
device is said to be conditionally stable or potentially unstable.
Fig. 4. (a) Layout and (b) frequency response of the proposed MLCMRC. The k -4 test for the proposed PA is shown in Fig. 11. The result
shows that the proposed PA at 0.9 GHz is unconditionally stable.
The proposed PA fabricated on a RT/Duroid 5880 substrate
(er = 2.2, H = 0.508 mm, tana = 0.0009). The fabricated photo of
the designed class-F amplifier integrated with MLCMRC is demon- 4.2. Large-signal measurements
strated in Fig. 9.
Large-signal continuous wave (CW) measurements are per-
formed to evaluate the proposed power amplifier under steady-
state conditions. The simulated and measured result of power
4. Measurements results added efficiency (PAE) parameter for the fabricated class-F PA, with
and without MLCMRC is shown in the Fig. 12. As results show, the
The proposed class-F power amplifier is characterized by small- PAE value for the conventional class-F power amplifier without
signal and large-signal measurements to evaluate its performance. resonator is 64% under 15 dBm input power, while the proposed
For more information about measurement setup and test bed PA can obtain 74% PAE at 15 dBm input power, which shows 10%
[24,25] can be useful. improvement in the PAE value, compared to the conventional PA.

Fig. 5. The structure of the basic 900 MHz class-F amplifier.

 S. Roshani, S. Roshani / Measurement 149 (2020) 106991 5

Fig. 6. The schematic diagram of the proposed 900 MHz class-F amplifier integrated with MLCMRC.

Fig. 7. The layouts of the (a) conventional and (b) proposed 900 MHz class-F amplifiers.

10.0 560
520
480
8.0
440
Drain current (mA)

400
Drain Voltage (V)

6.0 360
320
280
4.0
240
200
2.0 160
120
80
0.0 40
0
2 3 4
Time(ns)
Fig. 8. The drain waveforms of the proposed class-F amplifier.
6 S. Roshani, S. Roshani / Measurement 149 (2020) 106991

80

70

60

50

PAE(%)
40

30

20
with MLCMRC (Mea.)
with MLCMRC (Sim.)
10 without MLCMRC (Sim.)

Fig. 9. Fabricated photo of the proposed amplifier.

0
0 2 4 6 8 10 12 14 16 18 20
Pin (dBm)

Fig. 12. PAE parameter of the class-F amplifier with (proposed) and without (basic)
20
S 21 resonator.

S 11 80 80
S_parameters (dB)

0.0
-10 S 22 70 70

Drain Efficiency (%)

Drain
Output Power (dBm)

Efficency
60 60
-30 GSM-900
Freq. Band 50 50
GSM-900
0.9 GHz
G 40 40
-50 Simulated Freq. Band
Pout
8.8 GHz 9.15 GHz Measured 30 30
-70 20 20
8.8 GHz 9.15 GHz
0 1 2 3 4 5
10 10
Freq(GHz) 0.6 0.7 0.8 0.9 1.0 1.1
Freq(GHz)
Fig. 10. Simulated and measured S-parameters of the proposed PA.

Fig. 13. Drain efficiency and output power of the proposed class-F amplifier.

40
2
Pout
K = 1.63
30
1.5
Pout(dBm) & Gain (dB)

Gain
K-Δ

20
1

10 with MLCMRC (Mea.)

0.5 = 0.66
Delta with MLCMRC (Sim.)
without MLCMRC (Sim.)

0.0 0
0.5 0.9 1.0 1.5 2.0 0 2 4 6 8 10 12 14 16 18 20
Pin (dBm)
Freq(GHz)
Fig. 14. Gain and output power parameters of the class-F PA with (proposed) and
Fig. 11. Stability k -4 test for the proposed class-F amplifier. without resonator (basic).
 S. Roshani, S. Roshani / Measurement 149 (2020) 106991 7

Table 1
The performances improvement in the proposed class-F PA.

Power Added Efficiency Maximum Gain Size reduction

(PAE)
Conv. Proposed Improv. Conv. Proposed Improv. Conv. Proposed Improv.
This work 64% 74% 10% 17.5 dB 18.5 dB 5% 0.34k  0.27k (84.6 mm  66.4 mm) 0.26k  0.22k (55.6 mm  64.1 mm) 36%

Table 2
The performance comparison of the proposed class-F PA with similar works.

Ref. Class Freq. PAE (%) Gain (dB) P-1 dB Size reduction
[7] F 2.4 GHz 74% 11 dB 19 dBm 32%
[18] F 1.95 GHz 48% 13 dB 27 dBm N.A.
[19] F 2.4 GHz 70.9% 17 dB 35 dBm N.A.
[20] F 1.8 GHz 72.5% 18.2 dB 37 dBm N.A.
[11] F 1 GHz 64% 12 dB 21 dBm –
[26] F 2.4 GHz 59% N.A. 23 dBm –
[27] F 2 GHz 70.5% N.A. 19 dBm –
[28] F 5.5 GHz 70% 13.7 dB 27 dBm –
[29] F1 9.6 GHz 54% 10 dB N.A. –
This work F 0.9 GHz 74% 18.5 dB 29 dBm 36%

In the linear applications of the proposed PA, the PAE value is the conventional output matching lines with large size are omitted,
about 66% under 10 dBm input power. which leads to the size reduction, harmonics suppression and PAE
Fig. 13, shows the output power and drain efficiency of the pro- improvement at same time. The proposed MLCMRC is applied as
posed power amplifier versus frequency under a constant input harmonic control circuit block which suppresses the 3rd and 5th
power of 15 dBm. As shown in Fig. 13, the output power is higher harmonics with high attenuation level. The proposed PA has high
than 29 dBm at the frequency of the 0.9 GHz. The drain efficiency is linearity (P1dB = 29 dBm), high maximum gain of 18.5 dB and high
75% at the operating frequency. The GSM frequency band is shaded PAE of 74% PAE under 15 dBm input power. Moreover, the applied
in Fig. 13. As seen in Fig. 13, the results show that, the proposed MLCMRC resulted in the 36% size reduction, compared to the same
amplifier correctly works in GSM standard at the whole frequency PA without MLCMRC. The small-signal and large-signal measure-
range of 880–915 MHz with more than 70% drain efficiency and ment results of class-F PA are in good agreement with the simula-
more than 27 dBm output power. tion results, which confirms the validity of the proposed design.
The measured and simulated results of the output power and
gain parameters of the fabricated class-F amplifier are depicted Declaration of Competing Interest
in Fig. 14. The output power for the basic class-F power amplifier
without resonator is 28.9 dBm at 15 dBm input power, and the The authors declare that they have no known competing finan-
measured gain for this basic PA is 13.9 dB. For the proposed cial interests or personal relationships that could have appeared
class-F PA with MLCMRC the measured output power is to influence the work reported in this paper.
29.2 dBm at 15 dBm input power, and the corresponding measured
gain is 14.2 dB. Moreover, the maximum obtained gain for the con- Acknowledgments
ventional class-F amplifier without resonator is 17.5 dB and for the
proposed class-F PA with MLCMRC is 18.5 dB, which shows 5% The authors would like to thank the Kermanshah Branch, Isla-
improvement, compared to the conventional PA. The 1 dB com- mic Azad University for the financial support of this research
pression point (P1dB) for the simple class-F PA without MLCMRC project.
is about 28 dBm and for the proposed class-F PA with MLCMRC is
29 dBm, which 1 dB improvement is achieved. References
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