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2 Sa 1668

This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor model 2SA1668. Some key specifications include a collector-emitter breakdown voltage of -200V minimum, a DC current gain of 60 minimum at -10V collector-emitter voltage and -0.7A collector current, and applications in TV vertical output, audio output, and general purpose uses. Maximum ratings include a collector-base voltage of -200V, collector-emitter voltage of -200V, and collector current of -2A continuous.

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141 views2 pages

2 Sa 1668

This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor model 2SA1668. Some key specifications include a collector-emitter breakdown voltage of -200V minimum, a DC current gain of 60 minimum at -10V collector-emitter voltage and -0.7A collector current, and applications in TV vertical output, audio output, and general purpose uses. Maximum ratings include a collector-base voltage of -200V, collector-emitter voltage of -200V, and collector current of -2A continuous.

Uploaded by

Jejen Nurjenal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistor 2SA1668

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·DC Current Gain-
: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A)
·Complement to Type 2SC4382

APPLICATIONS
·Designed for TV vertical output ,audio output driver and
general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -200 V

VCEO Collector-Emitter Voltage -200 V

VEBO Emitter-Base Voltage -6 V

IC Collector Current-Continuous -2 A

IB Base Current-Continuous -1 A

Collector Power Dissipation


PC 25 W
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistor 2SA1668

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -200 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.7A; IB= -0.07A


B -1.0 V

ICBO Collector Cutoff Current VCB= -200V ; IE=0 -10 μA

IEBO Emitter Cutoff Current VEB= -6V; IC=0 -10 μA

hFE DC Current Gain IC= -0.7A ; VCE= -10V 60

COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 60 pF

fT Current-Gain—Bandwidth Product IE= 0.2A ; VCE= -12V 20 MHz

Switching Times

ton Turn-On Time 0.4 μs

IC= -1A; IB1= -IB2= -0.1A;


tstg Storage Time 1.5 μs
VCC= -20V; RL= 20Ω

tf Fall Time 0.5 μs

isc Website：www.iscsemi.cn 2

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