Scribd
Upload
416 views

2SC2625

The document describes an 80 watt NPN epitaxial silicon transistor. It provides maximum ratings and characteristics including collector-base voltage, collector-emitter voltage, collector current, and switching times. Electrical characteristics, thermal characteristics, and characteristic graphs are also included.

Uploaded by

Marcio J. Silva
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
416 views

2SC2625

The document describes an 80 watt NPN epitaxial silicon transistor. It provides maximum ratings and characteristics including collector-base voltage, collector-emitter voltage, collector current, and switching times. Electrical characteristics, thermal characteristics, and characteristic graphs are also included.

Uploaded by

Marcio J. Silva
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

2SC2625 ®

2SC2625 Pb
Pb Free Plating Product
80 WATT NPN EPITAXIAL SILICON TRANSISTOR

Features
High voltage,High speed switching
High reliability
Collector
Applications
Switching regulators Base
Ultrasonic generators
Emitter
High frequency inverters
General purpose power amplifiers
E
C
B

Fig.1 simplified outline (TO-3PB) and symbol

Maximum ratings and characteristics


Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Collector-Base voltage VCBO 450 V
Collector-Emitter voltage VCEO 400 V
Collector-Emitter voltage VCEO(SUS) 400 V
Emitter-Base voltage VEBO 7 V
Collector current IC 10 A
Base current IB 3 A
Collector power disspation PC 80 W
Operating junction temperature Tj +150 °C
Storage temperature Tstg -55 to +150 °C

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units


Collector-Base voltage VCBO ICBO = 1mA 450 V
Collector-Emitter voltage VCEO ICEO = 10mA 400 V
Collector-Emitter voltage VCEO(SUS) IC = 1A 400 - V
Emitter-Base voltage VEBO IEBO = 0.1mA 7 - V
Collector-Base leakage current ICBO VCBO = 450V - 1.0 mA
Emitter-Base leakage current IEBO VEBO = 7V - 0.1 mA
D.C. current gain hFE IC = 4A, VCE = 5V 10
Collector-Emitter saturation voltage VCE(Sat) IC = 4A, IB = 0.8A 1.2 V
Base-Emitter saturation voltage VBE(Sat) 1.5 V
*1 ton IC = 7.5A, IB1 = -IB2 = 1.5A 1.0 µs
Switching time tstg RL = 20 ohm ,Pw = 20µs Duty=<2% 2.0 µs
tf 1.0 µs

Thermal characteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Thermal resistance Rth(j-c) Junction to case 1.55 °C/W

Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/


2SC2625 ®

Characteristics

D.C. current gain hFE


Collector current IC[A]

Collector-Emitter voltage VCE[V] Collector current IC[A]


Collector Output Characteristics DC Current Gain
Saturation voltage VCE(sat), VBE(sat)[V]

Collector current IC[A]

Collector current IC[A] Collector-Emitter voltage VCE[V]

Base and Collector Saturation Voltage Safe Operating Area

*1 Switching Time Test Circuit


Switching time ton, tstg, tf [µs]

Collector current IC[A]

Switching Time

Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

You might also like