MJ21193-PNP

MJ21194-NPN

Silicon Power Transistors

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
• Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY
• High DC Current Gain SILICON POWER
• Excellent Gain Linearity TRANSISTORS
• High SOA 250 VOLTS, 250 WATTS
• These Devices are Pb−Free and are RoHS Compliant*
SCHEMATIC

PNP NPN
MAXIMUM RATINGS
CASE 3 CASE 3
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc
1 1
Collector−Base Voltage VCBO 400 Vdc BASE BASE
Emitter−Base Voltage VEBO 5 Vdc
EMITTER 2 EMITTER 2
Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc
Collector Current − Continuous IC 16 Adc
Collector Current − Peak (Note 1) ICM 30 Adc MARKING
3
DIAGRAM
Base Current − Continuous IB 5 Adc
Total Power Dissipation @ TC = 25°C PD 250 W
Derate Above 25°C 1.43 W/°C
2
Operating and Storage Junction TJ, Tstg −   65 to +200 °C 1
MJ2119xG
Temperature Range TO−204AA (TO−3) AYYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum CASE 1−07 MEX
Ratings are stress ratings only. Functional operation above the Recommended STYLE 1
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued) MJ2119x = Device Code
x = 3 or 4
THERMAL CHARACTERISTICS G = Pb−Free Package
Characteristic Symbol Max Unit A = Assembly Location
YY = Year
Thermal Resistance, Junction−to−Case RqJC 0.7 °C/W WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION
Device Package Shipping†

MJ21193G TO−3 100 Units / Tray

(Pb−Free)
MJ21194G TO−3 100 Units / Tray
(Pb−Free)
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specifications
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

September, 2013 − Rev. 6 MJ21193/D
 MJ21193 − PNP MJ21194 − NPN

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 250 − − Vdc
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current ICEO − − 100 mAdc
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current IEBO − − 100 mAdc
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current ICEX − 100 mAdc
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 5 − −
(VCE = 80 Vdc, t = 1 s (non−repetitive) 2.5 − −
ON CHARACTERISTICS
DC Current Gain hFE 75
(IC = 8 Adc, VCE = 5 Vdc) 25 −
(IC = 16 Adc, IB = 5 Adc) 8 −
Base−Emitter On Voltage VBE(on) − − 2.2 Vdc
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.8 Adc) − − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − − 4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD %
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched − 0.8 −
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched − 0.08 −
Current Gain Bandwidth Product fT 4 − − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance Cob − − 500 pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

PNP MJ21193 NPN MJ21194

T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

6.5 8.0

6.0 VCE = 10 V 7.0

6.0 10 V
5.5
5V
5.0
5.0 VCE = 5 V
4.0
4.5
3.0
4.0 2.0
3.5 TJ = 25°C TJ = 25°C
1.0
ftest = 1 MHz ftest = 1 MHz
3.0 0
f,

f,

0.1 1.0 10 0.1 1.0 10

IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Figure 2. Typical Current Gain

Bandwidth Product Bandwidth Product

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 MJ21193 − PNP MJ21194 − NPN

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194

1000 1000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 100°C
TJ = 100°C

25°C 25°C
100 100
-25°C
-25°C

VCE = 20 V VCE = 20 V

10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJ21193 NPN MJ21194

1000 1000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 100°C
TJ = 100°C

25°C 25°C
100 100
-25°C -25°C

VCE = 5 V VCE = 20 V

10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

PNP MJ21193 NPN MJ21194

30 35

1.5 A IB = 2 A
IB = 2 A 30
25 1.5 A
I C, COLLECTOR CURRENT (A)
I C, COLLECTOR CURRENT (A)

25
20 1A 1A
20
15
0.5 A 15 0.5 A
10 10

5.0 5.0
TJ = 25°C TJ = 25°C
0 0
0 5.0 10 15 20 25 0 5.0 10 15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics

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 MJ21193 − PNP MJ21194 − NPN

TYPICAL CHARACTERISTICS
PNP MJ21193 NPN MJ21194
3.0 1.4

1.2 TJ = 25°C
2.5 TJ = 25°C

SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

1.0 IC/IB = 10
2.0 IC/IB = 10 VBE(sat)
0.8

1.5 0.6

1.0 VBE(sat) 0.4

0.5 0.2 VCE(sat)

VCE(sat)
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages

PNP MJ21193 NPN MJ21194

10 10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

TJ = 25°C

TJ = 25°C VCE = 20 V (SOLID)

1.0 1.0 VCE = 5 V (DASHED)
VCE = 20 V (SOLID) VCE = 5 V (DASHED)

0.1 0.1
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage

100

There are two limitations on the power handling ability of

IC, COLLECTOR CURRENT (AMPS)

a transistor; average junction temperature and secondary

1 SEC breakdown. Safe operating area curves indicate IC − VCE lim-
10
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
TC = 25°C
1.0 The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
0.1
down.
1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

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 MJ21193 − PNP MJ21194 − NPN

10000 10000

TJ = 25°C Cib TJ = 25°C Cib

C, CAPACITANCE (pF)
C, CAPACITANCE (pF)

1000 Cob 1000

Cob
f(test) = 1 MHz f(test) = 1 MHz

100 100
0.1 1.0 10 100 0.1 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance

1.2

1.1
T , TOTAL HARMONIC

1.0
DISTORTION (%)

0.9

0.8
HD

0.7

0.6
10 100 1000 10000 100000
FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

+50 V
AUDIO PRECISION
MODEL ONE PLUS SOURCE 50 W
TOTAL HARMONIC AMPLIFIER DUT
DISTORTION
ANALYZER
0.5 W

0.5 W 8.0 W

DUT

-50 V

Figure 17. Total Harmonic Distortion Test Circuit

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 MJ21193 − PNP MJ21194 − NPN

PACKAGE DIMENSIONS

TO−204AA (TO−3)
CASE 1−07
ISSUE Z

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING
PLANE
REFERENCED TO-204AA OUTLINE SHALL APPLY.
E INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
U
L −Y− D 0.038 0.043 0.97 1.09
V E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
2 H 0.215 BSC 5.46 BSC
G B K 0.440 0.480 11.18 12.19
H 1 L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
−Q− U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
0.13 (0.005) M T Y M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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